Radiation doses to patients in diagnostics and interventional radiology need to be optimized to comply with the principles of radiation protection in medical practice. This involves using specific detectors with respe...Radiation doses to patients in diagnostics and interventional radiology need to be optimized to comply with the principles of radiation protection in medical practice. This involves using specific detectors with respective diagnostic beams to carry out quality control/quality assurance tests needed to optimize patient doses in the hospital. Semiconductor detectors are used in dosimetry to verify the equipment performance and dose to patients. This work aims to assess the performance, energy dependence, and response of five commercially available semiconductor detectors in RQR, RQR-M, RQA, and RQT at Secondary Standard Dosimetry for clinical applications. The diagnostic beams were generated using Exradin A4 reference ion chamber and PTW electrometer. The ambient temperature and pressure were noted for KTP correction. The detectors designed for RQR showed good performance in RQT beams and vice versa. The detectors designed for RQR-M displayed high energy dependency in other diagnostic beams. The type of diagnostic beam quality determines the response of semiconductor detectors. Therefore, a detector should be calibrated according to the beam qualities to be measured.展开更多
Purpose Development of highly sensitive semiconductor detectors of large diameter and manufacturing of a measuring complex—a radiometer based on the developed detectors for studying the activity of alpha particles an...Purpose Development of highly sensitive semiconductor detectors of large diameter and manufacturing of a measuring complex—a radiometer based on the developed detectors for studying the activity of alpha particles and the volumetric activity of radon in various media.Methods The detectors were manufactured using surface-barrier and heterojunction technologies.Polishing etchant formulations for silicon have been developed.To obtain plane-parallelism of the plates during chemical etching,a special dynamic setup was used.The structure of the radiometer,electrical circuits,and device software have been developed.Results The results of the development of technology for the manufacture of detectors of large dimensions(30-100 mm in diameter)are presented.Studies of the electrical and radiometric characteristics of surface-barrier n detectors and detectors based on Al-αGe-pSi-Au heterojunctions were carried out.The principle of operation of the electronic components of a radiometer made using these detectors is also given.Conclusion The data of monitoring of radon content in soil air are given.Monitoring results showed that the concentration varies depending on temperature,humidity,and time of day.The GSM/SMS module allows the device to operate in real time.展开更多
Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm...Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm.The array is divided into 16 subarrays,with pixels of 400 rows×32 columns per subarray.Each pixel incorporates two charge sensors:a diode sensor and a Topmetal sensor.The in-pixel circuit primarily consists of a charge-sensitive amplifier for energy measurements,a discriminator with a peak-holding circuit,and a time-to-amplitude converter for time-of-arrival measurements.The pixel of Topmetal-M2 has a charge input range of~0-3 k e-,a voltage output range of~0-180 mV,and a charge-voltage conversion gain of~59.56μV∕e-.The average equivalent noise charge of Topmetal-M2,which includes the readout electronic system noise,is~43.45 e-.In the scanning mode,the time resolution of Topmetal-M2 is 1 LSB=1.25μs,and the precision is^()7.41μs.At an operating voltage of 1.5 V,Topmetal-M2 has a power consumption of~49 mW∕cm~2.In this article,we provide a comprehensive overview of the chip architecture,pixel working principles,and functional behavior of Topmetal-M2.Furthermore,we present the results of preliminary tests conducted on Topmetal-M2,namely,alpha-particle and soft X-ray tests.展开更多
A chemical vapour deposition （CVD） diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection ...A chemical vapour deposition （CVD） diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection efficiency of the detector increases with increasing electric field intensity and reaches to 9.44% at 5 V/μm with the charge collection distance of 15.9 μm. The relationship between the sensitivity of the detector and proton energy is consistent with the Monte Carlo （MC） simulation result. Its plasma time for a pulse with 4.85×10^5 protons is 1l.2ns. The dose threshold for onset of damage under 9MeV proton irradiation in the detector is about 10^13 cm^-2. All of the results show that a CVD diamond detector has fast time response and high radiation hardness, and can be used in pulsed proton detection.展开更多
文摘Radiation doses to patients in diagnostics and interventional radiology need to be optimized to comply with the principles of radiation protection in medical practice. This involves using specific detectors with respective diagnostic beams to carry out quality control/quality assurance tests needed to optimize patient doses in the hospital. Semiconductor detectors are used in dosimetry to verify the equipment performance and dose to patients. This work aims to assess the performance, energy dependence, and response of five commercially available semiconductor detectors in RQR, RQR-M, RQA, and RQT at Secondary Standard Dosimetry for clinical applications. The diagnostic beams were generated using Exradin A4 reference ion chamber and PTW electrometer. The ambient temperature and pressure were noted for KTP correction. The detectors designed for RQR showed good performance in RQT beams and vice versa. The detectors designed for RQR-M displayed high energy dependency in other diagnostic beams. The type of diagnostic beam quality determines the response of semiconductor detectors. Therefore, a detector should be calibrated according to the beam qualities to be measured.
基金This work was financially supported by the Fundamental Research Programs of the Uzbekistan Academy of Sciences on the topic“Development and investigation of electrophysical and radiometric characteristics of large-sized ionizing radiation detectors”.
文摘Purpose Development of highly sensitive semiconductor detectors of large diameter and manufacturing of a measuring complex—a radiometer based on the developed detectors for studying the activity of alpha particles and the volumetric activity of radon in various media.Methods The detectors were manufactured using surface-barrier and heterojunction technologies.Polishing etchant formulations for silicon have been developed.To obtain plane-parallelism of the plates during chemical etching,a special dynamic setup was used.The structure of the radiometer,electrical circuits,and device software have been developed.Results The results of the development of technology for the manufacture of detectors of large dimensions(30-100 mm in diameter)are presented.Studies of the electrical and radiometric characteristics of surface-barrier n detectors and detectors based on Al-αGe-pSi-Au heterojunctions were carried out.The principle of operation of the electronic components of a radiometer made using these detectors is also given.Conclusion The data of monitoring of radon content in soil air are given.Monitoring results showed that the concentration varies depending on temperature,humidity,and time of day.The GSM/SMS module allows the device to operate in real time.
基金supported by the National Key Research and Development Program of China(No.2020YFE0202002)the National Natural Science Foundation of China(Nos.11875146 and U1932143)。
文摘Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm.The array is divided into 16 subarrays,with pixels of 400 rows×32 columns per subarray.Each pixel incorporates two charge sensors:a diode sensor and a Topmetal sensor.The in-pixel circuit primarily consists of a charge-sensitive amplifier for energy measurements,a discriminator with a peak-holding circuit,and a time-to-amplitude converter for time-of-arrival measurements.The pixel of Topmetal-M2 has a charge input range of~0-3 k e-,a voltage output range of~0-180 mV,and a charge-voltage conversion gain of~59.56μV∕e-.The average equivalent noise charge of Topmetal-M2,which includes the readout electronic system noise,is~43.45 e-.In the scanning mode,the time resolution of Topmetal-M2 is 1 LSB=1.25μs,and the precision is^()7.41μs.At an operating voltage of 1.5 V,Topmetal-M2 has a power consumption of~49 mW∕cm~2.In this article,we provide a comprehensive overview of the chip architecture,pixel working principles,and functional behavior of Topmetal-M2.Furthermore,we present the results of preliminary tests conducted on Topmetal-M2,namely,alpha-particle and soft X-ray tests.
基金Project supported by the National Natural Science Foundation of China (Grant No 10675074)
文摘A chemical vapour deposition （CVD） diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection efficiency of the detector increases with increasing electric field intensity and reaches to 9.44% at 5 V/μm with the charge collection distance of 15.9 μm. The relationship between the sensitivity of the detector and proton energy is consistent with the Monte Carlo （MC） simulation result. Its plasma time for a pulse with 4.85×10^5 protons is 1l.2ns. The dose threshold for onset of damage under 9MeV proton irradiation in the detector is about 10^13 cm^-2. All of the results show that a CVD diamond detector has fast time response and high radiation hardness, and can be used in pulsed proton detection.
