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Performance Control and Application of ZnO-Based P-N Junction Piezoelectric Devices
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作者 Xudong Shen Dongying Liu Li Zhao 《Journal of Electronic Research and Application》 2025年第1期81-87,共7页
Zinc oxide(ZnO),as a broadband gap semiconductor material,exhibits unique physical and chemical properties that make it highly suitable for optoelectronics,piezoelectric devices,and gas-sensitive sensors,showing signi... Zinc oxide(ZnO),as a broadband gap semiconductor material,exhibits unique physical and chemical properties that make it highly suitable for optoelectronics,piezoelectric devices,and gas-sensitive sensors,showing significant potential for various applications.This paper focuses on the regulation and application of ZnO-based p-n junctions and piezoelectric devices.It discusses in detail the preparation of ZnO materials,the construction of p-n junctions,the optimization of piezoelectric device performance,and its application in various fields.By employing different preparation methods and strategies,high-quality ZnO thin films can be grown,and effective control of p-type conductivity achieved.This study provides both a theoretical foundation and technical support for controlling the performance of ZnO-based piezoelectric devices,as well as paving new pathways for the broader application of ZnO materials. 展开更多
关键词 ZNO p-n junction Piezoelectric device Performance control APPLICATION
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Two Steps B Ion-Implantation of Diamond Film Grown on an n-Type Si Substrate and Its p-n Junction Effects
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作者 孙秀平 冯克成 +2 位作者 李超 张红霞 费允杰 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第6期1073-1076,共4页
Polycrystalline diamond thin films are deposited on an n-type Si substrates by hot filament chemical vapor deposition,and then are implanted with boron ions in a 200keV ion implanter.In order to achieve a better distr... Polycrystalline diamond thin films are deposited on an n-type Si substrates by hot filament chemical vapor deposition,and then are implanted with boron ions in a 200keV ion implanter.In order to achieve a better distribution of the implanted element,boron ions are implanted by two steps:implanting boron ions with the energy of 70keV first,and then with the energy of 100keV.The homogeneous distribution of the B ion is gained.The current-voltage characteristics of the samples are studied.It is found that the p-n heterojunction effect is achieved in these samples. 展开更多
关键词 ion implantation diamond film p-n junction
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Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0.18μm Bulk Process
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作者 梁斌 陈书明 刘必慰 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第9期1692-1697,共6页
Single event transient of a real p-n junction in a 0.18μm bulk process is studied by 3D TCAD simulation. The impact of voltage, temperature, substrate concentration, and LET on SET is studied. Our simulation results ... Single event transient of a real p-n junction in a 0.18μm bulk process is studied by 3D TCAD simulation. The impact of voltage, temperature, substrate concentration, and LET on SET is studied. Our simulation results demonstrate that biases in the range 1.62 to 1.98V influence DSET current shape greatly and total collected charge weakly. Peak current and charge collection within 2ns decreases as temperature increases,and temperature has a stronger influence on SET currents than on total charge. Typical variation of substrate concentration in modern VDSM processes has a negligible effect on SEEs. Both peak current and total collection charge increases as LET increases. 展开更多
关键词 charge collection p-n junction very deep sub-micro 3D device simulation RADIATION
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Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction 被引量:1
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作者 Yangfeng Li Yang Jiang +8 位作者 Shen Yan Haiyan Wu Junhui Die Caiwei Wang Ziguang Ma Lu Wang Haiqiang Jia Wenxin Wang and Hong Chen 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第9期157-161,共5页
Absorption and carrier transport behavior plays an important role in the light-to-electricity conversion process, which is difficult to characterize. Here we develop a method to visualize such a conversion process in ... Absorption and carrier transport behavior plays an important role in the light-to-electricity conversion process, which is difficult to characterize. Here we develop a method to visualize such a conversion process in the InGaN/GaN multiquantum wells embedded in a p-n junction. Under non-resonant absorption conditions, a photocurrent was generated and the photoluminescence intensity decayed by more than 70% when the p-n junction out-circuit was switched from open to short. However, when the excitation photon energy decreased to the resonant absorption edge, the photocurrent dropped drastically and the photoluminescence under open and short circuit conditions showed similar intensity. These results indicate that the escaping of the photo-generated carriers from the quantum wells is closely related to the excitation photon energy. 展开更多
关键词 multiple quantum wells p-n junction light-to-electricity PHOTOCURRENT
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Selective capture of Tl2O from flue gas with formation of p-n junction on V_(2)O_(5)-WO_(3)/TiO_(2)catalyst under working conditions 被引量:1
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作者 Jianjun Chen Rongqiang Yin +4 位作者 Gongda Chen Junyu Lang Xiaoping Chen Xuefeng Chu Junhua Li 《Green Energy & Environment》 SCIE EI CSCD 2023年第1期4-9,共6页
Thallium(Tl)compounds,highly toxic to biology,are usually released into flue gas during fossil/minerals combustion,and further distributed in water and soil.In this work,we fundamentally investigated the capture of ga... Thallium(Tl)compounds,highly toxic to biology,are usually released into flue gas during fossil/minerals combustion,and further distributed in water and soil.In this work,we fundamentally investigated the capture of gaseous Tl_(2)O by industrial V2O5-WO3/TiO_(2)catalyst under working condition in Tl-containing flue gas.Experimental and theoretical results indicated that the Tl_(2)O has significant electron-feeding capacity and easily donate electron to unoccupied orbitals of TiO_(2),leading to dismutation of Ti 2p and inartificial formation of p-n junction on TiO_(2)surface,which prompted Tl_(2)O selectively interacted with TiO_(2)in flue gas.Herein,we proposed and verified an effective way to capture gaseous Tl_(2)O,which offered almost the best choice to eliminate Tl emission from flue gas and expanded the function of the TiO_(2)-based catalyst.The formation of p-n junction on commercial V2O5-WO3/TiO_(2)catalyst under working condition was revealed for the first time,which can be a valuable reference for both heterocatalysis and electro/photocatalysis. 展开更多
关键词 TL CATALYST SCR CAPTURE p-n junction
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Thin Film of Perovskite Oxide with Atomic Scale p-n Junctions 被引量:1
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作者 HU Bin HUANG Ke-ke +3 位作者 HOU Chang-min YUAN Hong-ming PANG Guang-sheng FENG Shou-hua 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 2012年第3期379-381,共3页
Thin films of perovskite manganese oxide Lao.66Ca0.29K0.05MnO3(LCKMO) on Au/ITO(ITO=indium tin oxide) substrates were prepared by off-axis radio frequency magnetron sputtering and characterized by X-ray diffrac- t... Thin films of perovskite manganese oxide Lao.66Ca0.29K0.05MnO3(LCKMO) on Au/ITO(ITO=indium tin oxide) substrates were prepared by off-axis radio frequency magnetron sputtering and characterized by X-ray diffrac- tion(XRD), high-resolution transmission electron microscopy(HRTEM), and conductive atomic force microscopy (C-AFM) at room temperature. The thin films with thickness ranged from 100 nm to 300 nm basically show cubic structures with a=0.3886 nm, the same as that of the raw material used, but the structures are highly modulated. C-AFM results revealed that the atomic scale p-n junction feature of the thin films was the same as that of the single crystals. The preparation of the thin films thus further confirms the possibility of their application extending from micrometer-sized single crystals to macroscopic thin film. 展开更多
关键词 Perovskite oxide Thin film Atomic scale p-n junction
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Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction
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作者 张磊 邓宁 +2 位作者 任敏 董浩 陈培毅 《Chinese Physics B》 SCIE EI CAS CSCD 2007年第5期1440-1444,共5页
Effective spin-polarized injection from magnetic semiconductor (MS) to nonmagnetic semiconductor (NMS) has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium sp... Effective spin-polarized injection from magnetic semiconductor (MS) to nonmagnetic semiconductor (NMS) has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization (NESP) in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters. 展开更多
关键词 spin polarization spin-polarized injection magnetic semiconductor p-n junction
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Study on Porous Silicon with P-N Junction Sensor for Humidity Measurement
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作者 Chuzhe Tu Zhenhong Jia 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2006年第A03期372-374,共3页
Porous materials used for humidity sensing have been commercialized.In this paper,the preparation and humidity sensing characteristics of porous silicon with P-N junctions (PNJPS)are studied.PNJPS is made by electro-c... Porous materials used for humidity sensing have been commercialized.In this paper,the preparation and humidity sensing characteristics of porous silicon with P-N junctions (PNJPS)are studied.PNJPS is made by electro-chemical anodic etched method from silicon wafers with P-N junctions.Its porous structure is verified by scanning electronic micrograph. Experiments also show that PNJPS has high sensitivity,short response time (less than 30 seconds),and long-term stability. 展开更多
关键词 porous silicon humidity sensing characteristics p-n junctions
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Analyses and Simulation of V-I Characteristics for Solar Cells Based on P-N Junction
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作者 ZHENG Jian-bang REN Ju GUO Wen-ge HOU Chao-qi 《Semiconductor Photonics and Technology》 CAS 2005年第4期253-258,共6页
Through theoretical analyses of the Shockley equation and the difference between a practical P-N junction and its ideal model, the mathematical models of P-N junction and solar cells had been obtained. With Matlab sof... Through theoretical analyses of the Shockley equation and the difference between a practical P-N junction and its ideal model, the mathematical models of P-N junction and solar cells had been obtained. With Matlab software, the V-I characteristics of diodes and solar cells were simulated, and a computer simulation model of the solar cells based on P-N junction was also established. Based on the simulation model, the influences of solar cell’s internal resistances on open-circuit voltage and short-circuit current under certain illumination were numerically analyzed and solved. The simulation results showed that the equivalent series resistance and shunt resistance could strongly affect the V-I characteristics of solar cell, but their influence styles were different. 展开更多
关键词 p-n junction V-I characteristics Solar cell Equivalent circuit SIMULATION
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Polycrystalline Silicon Solar Cell p-n Junction Capacitance Behavior Modelling under an Integrated External Electrical Field Source in Solar Cell System
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作者 Adama Ouedraogo Boukaré Ouedraogo +1 位作者 Boureima Kaboré Dieudonné Joseph Bathiebo 《Energy and Power Engineering》 2020年第5期143-153,共11页
The state of the p-n junction is very important to explain the performances of a solar cell. Some works give the influence of the electric field on the junction capacitance. However, these works do not relate the qual... The state of the p-n junction is very important to explain the performances of a solar cell. Some works give the influence of the electric field on the junction capacitance. However, these works do not relate the quality of the p-n junction under the electic field. The present manuscript is about a theoretical modelling of the p-n junction capacitance behavior of the polycrystalline silicon solar cell under an integration of the external electrical field source. An external electrical source is integrated in a solar cell system. The electronic carriers charge generated in the solar cell crossed mainly the junction with the great strength external electrical field. In open circuit, this crossing of the electronic charge carriers causes the thermal heating of the p-n junction by Joule effect. The p-n junction capacitance plotted versus the junction dynamic velocity and the photo-voltage for different external electrical fields. The electric field causes the decrease of the photo-voltage mainly the open-circuit photo-voltage. The decrease of the photo-voltage translates the narrowing of the Space Charge Region (SCR). The average value of the external electric field used in this study is not sufficient to cause the breakdown of the p-n junction of the solar cell system under integration of the external electrical field production source. The increase of the electrical field causes rather the narrowing of the SCR. That can provide an improvement of the solar cell’s electrical outputs. 展开更多
关键词 POLYCRYSTALLINE Silicon Solar Cell Space Charge Region Photo-Current Photo-Voltage Conversion Efficiency pn-junction CAPACITANCE EXTERNAL ELECTRICAL Field
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p型MgZnOS透明导电薄膜及其p-n结型自驱动紫外光电探测器研究
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作者 郭紫曼 汪洋 +4 位作者 刘洋 张腾 陈剑 卢寅梅 何云斌 《发光学报》 北大核心 2025年第3期373-382,共10页
针对纯ZnO半导体的p型掺杂难题,提出采用阴(S^(2-))阳(Mg^(2+))离子复合取代、协同调控ZnO合金电子能带结构基础上,进行N受主掺杂的新思路,并采用脉冲激光沉积法成功制备了N掺杂p型透明导电MgZnOS薄膜。通过X射线衍射、透射光谱、霍尔... 针对纯ZnO半导体的p型掺杂难题,提出采用阴(S^(2-))阳(Mg^(2+))离子复合取代、协同调控ZnO合金电子能带结构基础上,进行N受主掺杂的新思路,并采用脉冲激光沉积法成功制备了N掺杂p型透明导电MgZnOS薄膜。通过X射线衍射、透射光谱、霍尔效应、X射线光电子能谱和二次离子质谱测试分析了薄膜的晶体结构、光电学性质及化学组分。实验结果表明,制备的MgZnOS∶N薄膜为六角纤锌矿结构,呈现c轴择优取向生长。薄膜在紫外-可见-近红外波段的透射率超过80%,且Mg掺杂可明显拓宽ZnO合金薄膜的光学带隙。所制备p型导电薄膜中的Mg和S含量分别为9%和25%,空穴浓度为2.02×10^(19) cm^(-3),霍尔迁移率为0.25 cm^(2)/(V∙s),电阻率为1.24Ω∙cm。在成功制备p型MgZnOS∶N薄膜的基础上,设计并制备了新型p-MgZnOS∶N/n-ZnO准同质p-n结型紫外光电探测器。器件呈现典型的二极管整流特性(开启电压约为1.21 V),且在0 V偏压下表现出稳定的自驱动紫外光响应,峰值响应度2.26 mA/W(波长为350 nm)。经分析,认为上述自驱动光响应来源于p-n结内建电场对光生载流子的有效分离和传输。本研究可为ZnO的p型掺杂研究提供有价值的参考,对开发高性能全ZnO基光电子器件具有重要意义。 展开更多
关键词 脉冲激光沉积 P型掺杂 MgZnOS p-n
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Facile Semiconductor p-n Homojunction Nanowires with Strategic p-Type Doping Engineering Combined with Surface Reconstruction for Biosensing Applications
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作者 Liuan Li Shi Fang +12 位作者 Wei Chen Yueyue Li Mohammad Fazel Vafadar Danhao Wang Yang Kang Xin Liu Yuanmin Luo Kun Liang Yiping Dang Lei Zhao Songrui Zhao Zongzhi Yin Haiding Sun 《Nano-Micro Letters》 SCIE EI CAS CSCD 2024年第10期15-30,共16页
Photosensors with versatile functionalities have emerged as a cornerstone for breakthroughs in the future optoelectronic systems across a wide range of applications.In particular,emerging photoelectrochemical(PEC)-typ... Photosensors with versatile functionalities have emerged as a cornerstone for breakthroughs in the future optoelectronic systems across a wide range of applications.In particular,emerging photoelectrochemical(PEC)-type devices have recently attracted extensive interest in liquid-based biosensing applications due to their natural electrolyte-assisted operating characteristics.Herein,a PEC-type photosensor was carefully designed and constructed by employing gallium nitride(GaN)p-n homojunction semiconductor nanowires on silicon,with the p-GaN segment strategically doped and then decorated with cobalt-nickel oxide(CoNiO_(x)).Essentially,the p-n homojunction configuration with facile p-doping engineering improves carrier separation efficiency and facilitates carrier transfer to the nanowire surface,while CoNiO_(x)decoration further boosts PEC reaction activity and carrier dynamics at the nanowire/electrolyte interface.Consequently,the constructed photosensor achieves a high responsivity of 247.8 mA W^(-1)while simultaneously exhibiting excellent operating stability.Strikingly,based on the remarkable stability and high responsivity of the device,a glucose sensing system was established with a demonstration of glucose level determination in real human serum.This work offers a feasible and universal approach in the pursuit of high-performance bio-related sensing applications via a rational design of PEC devices in the form of nanostructured architecture with strategic doping engineering. 展开更多
关键词 p-n GaN nanowires Strategic p-doping Surface decoration Photoelectrochemical sensor Glucose sensing
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TiO_(2)Electron Transport Layer with p-n Homojunctions for Efficient and Stable Perovskite Solar Cells
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作者 Wenhao Zhao Pengfei Guo +8 位作者 Jiahao Wu Deyou Lin Ning Jia Zhiyu Fang Chong Liu Qian Ye Jijun Zou Yuanyuan Zhou Hongqiang Wang 《Nano-Micro Letters》 SCIE EI CAS CSCD 2024年第10期1-14,共14页
Low-temperature processed electron transport layer(ETL)of TiO_(2)that is widely used in planar perovskite solar cells(PSCs)has inherent low carrier mobility,resulting in insufficient photogenerated elec-tron transport... Low-temperature processed electron transport layer(ETL)of TiO_(2)that is widely used in planar perovskite solar cells(PSCs)has inherent low carrier mobility,resulting in insufficient photogenerated elec-tron transport and thus recombination loss at buried interface.Herein,we demonstrate an effective strategy of laser embedding of p-n homojunctions in the TiO_(2)ETL to accelerate electron transport in PSCs,through localized build-in electric fields that enables boosted electron mobility by two orders of magnitude.Such embedding is found significantly helpful for not only the enhanced crystallization quality of TiO_(2)ETL,but the fabrication of perovskite films with larger-grain and the less-trap-states.The embedded p-n homojunction enables also the modulation of interfacial energy level between perovskite layers and ETLs,favoring for the reduced voltage deficit of PSCs.Benefiting from these merits,the formamidinium lead iodide(FAPbI_(3))PSCs employing such ETLs deliver a champion efficiency of 25.50%,along with much-improved device stability under harsh conditions,i.e.,maintain over 95%of their initial efficiency after operation at maximum power point under continuous heat and illumination for 500 h,as well as mixed-cation PSCs with a champion efficiency of 22.02%and over 3000 h of ambient storage under humidity stability of 40%.Present study offers new possibilities of regulating charge transport layers via p-n homojunction embedding for high performance optoelectronics. 展开更多
关键词 Electron transport layer p-n homojunction Electron mobility Buried interface Perovskite solar cells
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Atmosphere engineering of metal-free Te/C_(3)N_(4) p-n heterojunction for nearly 100% photocatalytic converting CO_(2) to CO
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作者 Huange Liao Kai Huang +5 位作者 Weidong Hou Huazhang Guo Cheng Lian Jiye Zhang Zheng Liu Liang Wang 《Advanced Powder Materials》 2024年第6期81-90,共10页
Carbon nitride(CN)-based heterojunction photocatalysts hold promise for efficient carbon dioxide(CO_(2))reduction.However,suboptimal production yields and limited selectivity in CO_(2)conversion pose significant barri... Carbon nitride(CN)-based heterojunction photocatalysts hold promise for efficient carbon dioxide(CO_(2))reduction.However,suboptimal production yields and limited selectivity in CO_(2)conversion pose significant barriers to achieving efficient CO_(2)conversion.Here,we present the construction of a p-n heterojunction between ultrasmall Te NPs and CN nanosheet using a novel tandem hydrothermal-calcination synthesis strategy.Through ammonia-assisted calcination,ultrasmall Te NPs are grown in-situ on the CN nanosheets’surface,resulting in the generation of a robust p-n heterojunction.The synthesized heterojunction exhibits increased specific surface area,reinforced visible light absorption,intensive CO_(2)adsorption capacity,and efficient charge transfer.The optimum Te/CN-NH_(3)demonstrates superior photocatalytic CO_(2)reduction activity and durability,with nearly 100%selectivity for CO and a yield as high as 92.0μmol g^(-1)h^(-1),a fourfold increase compared to pure CN.Experimental and theoretical calculations unravel that the strong built-in electric field of the Te/CN-NH_(3)p-n heterojunction accelerates the migration of photogenerated electrons from Te NPs to the N site on CN nanosheets,thereby promoting CO_(2)reduction.This study provides a promising material design approach for the construction of highperformance p-n heterojunction photocatalysts. 展开更多
关键词 p-n heterojunction Carbon nitride Built-in electric field Photocatalytic carbon dioxide reduction Heterojunction photocatalysts
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Influence of Magnetic Field and Temperature on the Transient Density and Voltage in a Radial Junction Solar Cell in Dynamic Regime under Pulsed Multispectral Illumination
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作者 Moussa Ouedraogo Nazé Yacouba Traore +2 位作者 Alain Diasso Raguilignaba Sam François Zougmore 《Open Journal of Applied Sciences》 2025年第1期42-52,共11页
This study examines the influence of magnetic field and temperature on the transient voltage of a polycrystalline silicon radial junction solar cell in a dynamic regime under multispectral illumination. Radial junctio... This study examines the influence of magnetic field and temperature on the transient voltage of a polycrystalline silicon radial junction solar cell in a dynamic regime under multispectral illumination. Radial junction solar cells represent a major advancement in photovoltaic technologies, as they optimize light absorption and charge collection efficiency. The focus is on the impact of the magnetic field and temperature on the decay of transient voltage, which provides crucial information on recombination processes and the lifetime of minority carriers. The results reveal that the magnetic field tends to increase the transient voltage by directly affecting the transient electron density. Indeed, for B > 7 × 10−5 T, the magnetic field prolongs the relaxation time by increasing the transient voltage amplitude. Additionally, rising temperatures accelerate (ranging from 290 K to 450 K) recombination processes, thereby reducing the transient voltage, although this effect is moderated by the presence of a magnetic field. The study highlights the complex interaction between magnetic field and temperature, with significant impacts on the transient behaviour. 展开更多
关键词 ELECTRONS Radial junction Transient Voltage Magnetic Field Operating Temperature
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Subclassification scheme for adenocarcinomas of the esophagogastric junction and prognostic analysis based on clinicopathological features
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作者 Shuo Guo Fang-Fang Liu +3 位作者 Li Yuan Wen-Qian Ma Li-Mian Er Qun Zhao 《World Journal of Gastrointestinal Oncology》 2025年第4期178-192,共15页
BACKGROUND Adenocarcinoma of the esophagogastric junction(AEG)has distinct malignant features compared with other esophageal and gastric cancers.Its management is controversial and largely influenced by tumor location... BACKGROUND Adenocarcinoma of the esophagogastric junction(AEG)has distinct malignant features compared with other esophageal and gastric cancers.Its management is controversial and largely influenced by tumor location and esophageal involve-ment.Hence,understanding the clinicopathological characteristics and prognosis of AEG is essential for optimizing treatment strategies.AIM To evaluate the prognosis and clinicopathological features of patients with AEG,providing insights for management strategies.METHODS This retrospective study analyzed cases with AEG admitted between January 2016 and December 2017.Patients meeting the inclusion criteria were categorized into three groups:Type E[tumors whose center was located within 5 cm above the esophagogastric junction(EGJ)];Type Eg(tumors whose center was situated within 2 cm below the EGJ),with a 2-cm esophageal invasion;Type Ge(tumors whose center was situated within 2 cm below the EGJ),with an esophageal in-vasion of<2 cm,based on tumor location and esophageal involvement.Then,clinicopathological characteristics and survival outcomes of the groups were compared to evaluate the predictive value of the American Joint Committee on Cancer/International Alliance against Cancer 8th edition gastric cancer and eso-phageal adenocarcinoma staging systems.Statistical analysis included survival analysis and Cox regression to assess prognostic factors.RESULTS Totally,153 patients with AEG were included(median follow up:41.1 months;22,31,and 100 patients from type E,Eg,and Ge,respectively),with significant differences in maximum tumor length,esophageal involvement length,tumor type,pathology,differentiation,depth of invasion,and lymph node metastasis between the groups(P<0.05).Lymph node metastasis rates at stations 1,2,3,and 7 were lower in type E than in Eg and Ge(P<0.05).Survival rates for type E(45.5%)were significantly lower than those for Eg(48.4%)and Ge(73.0%)(P=0.001).Type E tumors,vascular infiltration,T3-T4 invasion depth,and lymph node metastasis,were identified as independent prognostic factors(P<0.05).The gastric cancer staging system outperformed the esophageal adenocarcinoma system for type Ge tumors.CONCLUSION Clinicopathological characteristics and prognoses varied between the AEG groups,with type E demonstrating distinct features.The gastric cancer staging system more accurately predicted type Ge AEG prognosis,guiding clinical decision-making. 展开更多
关键词 Adenocarcinoma of esophagogastric junction Siewert classification Survival rate PROGNOSIS Risk factors
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Plasmonic tandem heterojunctions enable high-efficiency charge transfer for broad spectrum photocatalytic hydrogen production
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作者 Wenxuan Chen Xiu-Qing Qiao +6 位作者 Guo Hui Bojing Sun Dongfang Hou Meidi Wang Xueqian Wu Tao Wu Dong-Sheng Li 《Journal of Energy Chemistry》 2025年第1期710-720,共11页
Rational engineering of semiconductor photocatalysts for efficient hydrogen production is of great significance but still challenging,primarily due to the limitations in charge transfer kinetics.Herein,a fascinating p... Rational engineering of semiconductor photocatalysts for efficient hydrogen production is of great significance but still challenging,primarily due to the limitations in charge transfer kinetics.Herein,a fascinating plasmonic tandem heterojunction with the hc-CdS/Mo_(2)C@C heterostructure is aimfully prepared for effectively promoting the charge separation kinetics of the CdS photocatalyst via the synergistic strategy of phase junction,Schottky junction,and photothermal effect.The difference in atomic configuration between cubic-CdS (c-CdS) and hexagonal-CdS (h-CdS) leads to effective charge separation through a typical Ⅱ charge transfer mechanism,and plasmonic Schottky junction further extracts the electrons in the hc-CdS phase junction to realize gradient charge transfer.Besides,the photothermal effect of Mo_(2)C@C helps to expand the light absorption,accelerate charge transfer kinetics,and reduce the hydrogen evolution energy barrier.The carbon layer provides a fast channel for charge transfer and protects the photocatalyst from photocorrosion.As a result,the optimized hc-CMC photocatalyst exhibits a significantly high photocatalytic H_(2)production activity of 28.63 mmol/g/h and apparent quantum efficiency of 61.8%,surpassing most of the reported photocatalysts.This study provides a feasible strategy to enhance the charge transfer kinetics and photocatalytic activity of CdS by constructing plasmonic tandem heterogeneous junctions. 展开更多
关键词 HETEROjunctionS Mo_(2)C LSPR PHOTOCATALYST Phase junction Schottkyjunction Photothermal effect
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Dietary Zn proteinate with moderate chelation strength alleviates heat stress‑induced intestinal barrier function damage by promoting expression of tight junction proteins via the A20/NF‑κB p65/MMP‑2 pathway in the jejunum of broilers
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作者 Yangyang Hu Weiyun Zhang +12 位作者 Ke Yang Xi Lin Hsiao‑Ching Liu Jack Odle Miles Todd See Xiaoyan Cui Tingting Li Shengchen Wang Xiudong Liao Liyang Zhang Sufen Li Yun Hu Xugang Luo 《Journal of Animal Science and Biotechnology》 2025年第1期316-330,共15页
Background The aim of this study was to determine whether and how Zn proteinate with moderate chelation strength(Zn-Prot M)can alleviate heat stress(HS)-induced intestinal barrier function damage of broilers.A complet... Background The aim of this study was to determine whether and how Zn proteinate with moderate chelation strength(Zn-Prot M)can alleviate heat stress(HS)-induced intestinal barrier function damage of broilers.A completely randomized design was used for comparatively testing the effects of Zn proteinate on HS and non-HS broilers.Under high temperature(HT),a 1(Control,HT-CON)+2(Zn source)×2(added Zn level)factorial arrangement of treatments was used.The 2 added Zn sources were Zn-Prot M and Zn sulfate(ZnS),and the 2 added Zn levels were 30 and 60 mg/kg.Under normal temperature(NT),a CON group(NT-CON)and pair-fed group(NT-PF)were included.Results The results showed that HS significantly reduced mRNA and protein expression levels of claudin-1,occludin,junctional adhesion molecule-A(JAMA),zonula occludens-1(ZO-1)and zinc finger protein A20(A20)in the jejunum,and HS also remarkably increased serum fluorescein isothiocyanate dextran(FITC-D),endotoxin and interleukin(IL)-1βcontents,serum diamine oxidase(DAO)and matrix metalloproteinase(MMP)-2 activities,nuclear factor kappa-B(NF-κB)p65 mRNA expression level,and protein expression levels of NF-κB p65 and MMP-2 in the jejunum.However,dietary supplementation with Zn,especially organic Zn as Zn-Prot M at 60 mg/kg,significantly decreased serum FITC-D,endotoxin and IL-1βcontents,serum DAO and MMP-2 activities,NF-κB p65 mRNA expression level,and protein expression levels of NF-κB p65 and MMP-2 in the jejunum of HS broilers,and notably promoted mRNA and protein expression levels of claudin-1,ZO-1 and A20.Conclusions Our results suggest that dietary Zn,especially 60 mg Zn/kg as Zn-Prot M,can alleviate HS-induced intestinal barrier function damage by promoting the expression of TJ proteins possibly via induction of A20-mediated suppression of the NF-κB p65/MMP-2 pathway in the jejunum of HS broilers. 展开更多
关键词 A20/NF-κB p65/MMP-2 pathway BROILER Heat stress Intestinal barrier function Tight junction proteins Zn
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Crosstalk among canonical Wnt and Hippo pathway members in skeletal muscle and at the neuromuscular junction
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作者 Said Hashemolhosseini Lea Gessler 《Neural Regeneration Research》 SCIE CAS 2025年第9期2464-2479,共16页
Skeletal muscles are essential for locomotion,posture,and metabolic regulation.To understand physiological processes,exercise adaptation,and muscle-related disorders,it is critical to understand the molecular pathways... Skeletal muscles are essential for locomotion,posture,and metabolic regulation.To understand physiological processes,exercise adaptation,and muscle-related disorders,it is critical to understand the molecular pathways that underlie skeletal muscle function.The process of muscle contra ction,orchestrated by a complex interplay of molecular events,is at the core of skeletal muscle function.Muscle contraction is initiated by an action potential and neuromuscular transmission requiring a neuromuscular junction.Within muscle fibers,calcium ions play a critical role in mediating the interaction between actin and myosin filaments that generate force.Regulation of calcium release from the sarcoplasmic reticulum plays a key role in excitation-contraction coupling.The development and growth of skeletal muscle are regulated by a network of molecular pathways collectively known as myogenesis.Myogenic regulators coordinate the diffe rentiation of myoblasts into mature muscle fibers.Signaling pathways regulate muscle protein synthesis and hypertrophy in response to mechanical stimuli and nutrient availability.Seve ral muscle-related diseases,including congenital myasthenic disorders,sarcopenia,muscular dystrophies,and metabolic myopathies,are underpinned by dys regulated molecular pathways in skeletal muscle.Therapeutic interventions aimed at preserving muscle mass and function,enhancing regeneration,and improving metabolic health hold promise by targeting specific molecular pathways.Other molecular signaling pathways in skeletal muscle include the canonical Wnt signaling pathway,a critical regulator of myogenesis,muscle regeneration,and metabolic function,and the Hippo signaling pathway.In recent years,more details have been uncovered about the role of these two pathways during myogenesis and in developing and adult skeletal muscle fibers,and at the neuromuscular junction.In fact,research in the last few years now suggests that these two signaling pathways are interconnected and that they jointly control physiological and pathophysiological processes in muscle fibers.In this review,we will summarize and discuss the data on these two pathways,focusing on their concerted action next to their contribution to skeletal muscle biology.However,an in-depth discussion of the noncanonical Wnt pathway,the fibro/a dipogenic precursors,or the mechanosensory aspects of these pathways is not the focus of this review. 展开更多
关键词 canonical Wnt"Wingless-related integration site"pathway beta-catenin(CTNNB1) Hippo pathway MYOGENESIS MYOTUBE neuromuscular junction satellite cell skeletal muscle fiber transcriptional co-activator with PDZ-binding motif(TAZ) T-cell-specific transcription factor/lymphoid enhancer-binding factor(TCF/LEF) TEA domain family member(TEAD) transducin-like enhancer of split(TLE) yes-associated protein 1(YAP1)
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Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe 被引量:5
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作者 Xiang Yuan Lei Tang +12 位作者 Peng Wang Zhigang Chen Yichao Zou Xiaofeng Su Cheng Zhang Yanwen Liu Weiyi Wang Cong Liu Fansheng Chen Jin Zou Peng Zhou Weida Hu Faxian Xiu 《Nano Research》 SCIE EI CAS CSCD 2015年第10期3332-3341,共10页
Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exh... Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm^2/(V.s) by molecular beam epitaxy. The arrayed p-n )unctions were developed by growing few-layer GaTe directly on fhree-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices. 展开更多
关键词 GATE wafer-scaletwo-dimensional materials p-n junction imaging PHOTODIODE PHOTOSENSOR
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