β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其...β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。展开更多
采用原位诱导法制备得到了一系列x Li M_2O_4?(1-x)Li Ni_(1/3)Co_(1/3)Mn_(1/3)O_2(M=Ni,Co,Mn;x=0,0.1,0.2,0.3,0.4,0.5)尖晶石/层状异质结构复合材料。借助X射线衍射、扫描电镜、差示扫描量热仪、恒电流间歇滴定技术和恒电流充放电...采用原位诱导法制备得到了一系列x Li M_2O_4?(1-x)Li Ni_(1/3)Co_(1/3)Mn_(1/3)O_2(M=Ni,Co,Mn;x=0,0.1,0.2,0.3,0.4,0.5)尖晶石/层状异质结构复合材料。借助X射线衍射、扫描电镜、差示扫描量热仪、恒电流间歇滴定技术和恒电流充放电测试表征手段对材料的晶体结构、微观形貌和电化学性能进行了研究。电化学性能结果表明:x=0.2材料的倍率性能和循环性能最佳,在2.7~4.3 V、1C下循环100次后,放电比容量为137 m A?h/g,容量保持率为93%;10C时的放电比容量为112 m A?h/g,相比于原始Li Ni_(1/3)Co_(1/3)Mn_(1/3)O_2材料在10C的放电比容量(95 m A?h/g)有较大提高。此外,快充慢放能力测试也证实了该材料的结构稳定,其在5C充、1C放的充放电机制下,循环100次后的放电比容量还能高达120 m A?h/g,容量保持率为87%。恒电流间歇滴定技术(GITT)的结果表明。x=0.2材料的D_(Li+)值比原始Li Ni_(1/3)Co_(1/3)Mn_(1/3)O_2材料的要高出一个数量级,说明尖晶石相的引入从根本上改善了材料的电化学性能。展开更多
P2-type Na_(2/3)Fe_(1/2)Mn_(1/2)O_(2) was synthesized by a facile sol−gel method,and the effect of calcination temperature on the structure,morphology and electrochemical performance of samples was investigated.The re...P2-type Na_(2/3)Fe_(1/2)Mn_(1/2)O_(2) was synthesized by a facile sol−gel method,and the effect of calcination temperature on the structure,morphology and electrochemical performance of samples was investigated.The results show that the sample obtained at 900℃ is pure P2-type Na_(2/3)Fe_(1/2)Mn_(1/2)O_(2) phase with good crystallization,which consists of hexagon plate-shaped particles with the size and thickness of 2−4μm and 200−400 nm,respectively.The sample exhibits an initial specific discharge capacity of 243 mA·h/g at a current density of 26 mA/g with good cycling stability.The high specific capacity indicates that P2-type Na_(2/3)Fe_(1/2)Mn_(1/2)O_(2) is a promising cathode material for sodiumion batteries.展开更多
文摘β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。
文摘采用原位诱导法制备得到了一系列x Li M_2O_4?(1-x)Li Ni_(1/3)Co_(1/3)Mn_(1/3)O_2(M=Ni,Co,Mn;x=0,0.1,0.2,0.3,0.4,0.5)尖晶石/层状异质结构复合材料。借助X射线衍射、扫描电镜、差示扫描量热仪、恒电流间歇滴定技术和恒电流充放电测试表征手段对材料的晶体结构、微观形貌和电化学性能进行了研究。电化学性能结果表明:x=0.2材料的倍率性能和循环性能最佳,在2.7~4.3 V、1C下循环100次后,放电比容量为137 m A?h/g,容量保持率为93%;10C时的放电比容量为112 m A?h/g,相比于原始Li Ni_(1/3)Co_(1/3)Mn_(1/3)O_2材料在10C的放电比容量(95 m A?h/g)有较大提高。此外,快充慢放能力测试也证实了该材料的结构稳定,其在5C充、1C放的充放电机制下,循环100次后的放电比容量还能高达120 m A?h/g,容量保持率为87%。恒电流间歇滴定技术(GITT)的结果表明。x=0.2材料的D_(Li+)值比原始Li Ni_(1/3)Co_(1/3)Mn_(1/3)O_2材料的要高出一个数量级,说明尖晶石相的引入从根本上改善了材料的电化学性能。
基金the financial supports from the Natural Science Foundation of Hunan Province,China(No.2020JJ5102)the Scientific Research Fund of Hunan Provincial Education Department,China(No.19A111).
文摘P2-type Na_(2/3)Fe_(1/2)Mn_(1/2)O_(2) was synthesized by a facile sol−gel method,and the effect of calcination temperature on the structure,morphology and electrochemical performance of samples was investigated.The results show that the sample obtained at 900℃ is pure P2-type Na_(2/3)Fe_(1/2)Mn_(1/2)O_(2) phase with good crystallization,which consists of hexagon plate-shaped particles with the size and thickness of 2−4μm and 200−400 nm,respectively.The sample exhibits an initial specific discharge capacity of 243 mA·h/g at a current density of 26 mA/g with good cycling stability.The high specific capacity indicates that P2-type Na_(2/3)Fe_(1/2)Mn_(1/2)O_(2) is a promising cathode material for sodiumion batteries.
