CN x films were made by a facing targets sputtering ( FTS) systemon the Si(100) substrate under different N 2 partial pressure. XRD, XPS, FTIR and Raman Spectroscopy( RS) were measured to investigate the str...CN x films were made by a facing targets sputtering ( FTS) systemon the Si(100) substrate under different N 2 partial pressure. XRD, XPS, FTIR and Raman Spectroscopy( RS) were measured to investigate the structure and the binding state of the film. The films are amorphous and the N/C increases with the N 2 partial pressure increasing and reaches 0 46 when the N 2 pressure is 100%. The N incorporated C forms N sp 2C and N sp 3C mainly and there is a small amount of C≡N.展开更多
文摘CN x films were made by a facing targets sputtering ( FTS) systemon the Si(100) substrate under different N 2 partial pressure. XRD, XPS, FTIR and Raman Spectroscopy( RS) were measured to investigate the structure and the binding state of the film. The films are amorphous and the N/C increases with the N 2 partial pressure increasing and reaches 0 46 when the N 2 pressure is 100%. The N incorporated C forms N sp 2C and N sp 3C mainly and there is a small amount of C≡N.
