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Fabrication of Graphene/Cu Composite by Chemical Vapor Deposition and Effects of Graphene Layers on Resultant Electrical Conductivity
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作者 Xinyue Liu Yaling Huang +2 位作者 Yuyao Li Jie Liu Quanfang Chen 《Journal of Harbin Institute of Technology(New Series)》 CAS 2024年第1期16-25,共10页
Graphene(Gr)has unique properties including high electrical conductivity;Thus,graphene/copper(Gr/Cu)composites have attracted increasing attention to replace traditional Cu for electrical applications. However,the pro... Graphene(Gr)has unique properties including high electrical conductivity;Thus,graphene/copper(Gr/Cu)composites have attracted increasing attention to replace traditional Cu for electrical applications. However,the problem of how to control graphene to form desired Gr/Cu composite is not well solved. This paper aims at exploring the best parameters for preparing graphene with different layers on Cu foil by chemical vapor deposition(CVD)method and studying the effects of different layers graphene on Gr/Cu composite’s electrical conductivity. Graphene grown on single-sided and double-sided copper was prepared for Gr/Cu and Gr/Cu/Gr composites. The resultant electrical conductivity of Gr/Cu composites increased with decreasing graphene layers and increasing graphene volume fraction. The Gr/Cu/Gr composite with monolayer graphene owns volume fraction of less than 0.002%,producing the best electrical conductivity up to59.8 ×10^(6)S/m,equivalent to 104.5% IACS and 105.3% pure Cu foil. 展开更多
关键词 chemical vapor deposition(cvd) Gr/Cu Gr/Cu/Gr graphene layers graphene volume fraction electrical conductivity
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Edge effect during microwave plasma chemical vapor deposition diamond-film:Multiphysics simulation and experimental verification
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作者 Zhiliang Yang Kang An +7 位作者 Yuchen Liu Zhijian Guo Siwu Shao Jinlong Liu Junjun Wei Liangxian Chen Lishu Wu Chengming Li 《International Journal of Minerals,Metallurgy and Materials》 SCIE EI CAS CSCD 2024年第10期2287-2299,共13页
This study focused on the investigation of the edge effect of diamond films deposited by microwave plasma chemical vapor de-position.Substrate bulge height△h is a factor that affects the edge effect,and it was used t... This study focused on the investigation of the edge effect of diamond films deposited by microwave plasma chemical vapor de-position.Substrate bulge height△h is a factor that affects the edge effect,and it was used to simulate plasma and guide the diamond-film deposition experiments.Finite-element software COMSOL Multiphysics was used to construct a multiphysics(electromagnetic,plasma,and fluid heat transfer fields)coupling model based on electron collision reaction.Raman spectroscopy and scanning electron microscopy were performed to characterize the experimental growth and validate the model.The simulation results reflected the experimental trends observed.Plasma discharge at the edge of the substrate accelerated due to the increase in△h(△h=0-3 mm),and the values of electron density(n_(c)),molar concentration of H(C_(H)),and molar concentration of CH_(3)(C_(CH_(3)))doubled at the edge(for the special concave sample with△h=−1 mm,the active chemical groups exhibited a decreased molar concentration at the edge of the substrate).At=0-3 mm,a high diamond growth rate and a large diamond grain size were observed at the edge of the substrate,and their values increased with.The uniformity of film thickness decreased with.The Raman spectra of all samples revealed the first-order characteristic peak of dia-mond near 1332 cm^(−1).When△h=−1 mm,tensile stress occurred in all regions of the film.When△h=1-3 mm,all areas in the film ex-hibited compressive stress. 展开更多
关键词 microwave plasma chemical vapor deposition edge discharge plasma diamond film
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SYNTHESIS OF PPCuPc FILM BY MICROWAVE PLASMA CHEMICAL VAPORIZATION DEPOSITION(MPCVD)
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作者 Ai Min YU Wen Guo XU +1 位作者 Wen Jun YANG Qin Han JIN 《Chinese Chemical Letters》 SCIE CAS CSCD 1991年第11期897-900,共4页
Using a low power microwave generator(W_(max)=100W) and a Surfatron discharge device, Plasma-polymerized copper phthalocyanine (PPCuPc) film was synthesised from monomer copper phthalocyanine(CuPc) by microwave plasma... Using a low power microwave generator(W_(max)=100W) and a Surfatron discharge device, Plasma-polymerized copper phthalocyanine (PPCuPc) film was synthesised from monomer copper phthalocyanine(CuPc) by microwave plasma chemical vaporization deposition(MPCVD) with Ar as incorporation gas. The film was characterized by FTIR and ESCA. The role of dissociation of chemical bond in the polymerization process and the influence of substrate temperature and material on deposition were investigated in some detail. 展开更多
关键词 FTIR MPcvd SYNTHESIS OF PPCuPc FILM BY MICROWAVE PLASMA chemical vaporIZATION deposition ESCA
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Structural and optical properties of tellurium films obtained by chemical vapor deposition(CVD)
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作者 马玉天 龚竹青 +1 位作者 徐卫红 黄坚 《中国有色金属学会会刊:英文版》 EI CSCD 2006年第3期693-699,共7页
Tellurium thin films were prepared by the chemical vapor deposition method. The structure, surface morphology and optical properties of the Te thin films were analyzed by powder X-ray diffraction, scanning electron mi... Tellurium thin films were prepared by the chemical vapor deposition method. The structure, surface morphology and optical properties of the Te thin films were analyzed by powder X-ray diffraction, scanning electron microscopy, FTIR transmission, UV/VIS/NIR transmission and reflectance. The results show that the films structural and optical properties are influenced by many factors such as film thickness, crystallite size and substrate temperature. The films as thick as 111?133 nm have high IR transmission across the full 8?13 μm band and highly blocking in the solar spectral region elsewhere, which indicates that Te films thickness in this region can be used as good solar radiation shields in radiative cooling devices. 展开更多
关键词 碲薄膜 化学气相淀积 太阳辐射防护 cvd 辐射冷却 光学性能
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Modification of ACFs by chemical vapor deposition and its application for removal of methyl orange from aqueous solution 被引量:3
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作者 王丽平 黄柱成 张明瑜 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2013年第2期530-537,共8页
Viscose activated carbon fibers (ACFs) were characterized using specific surface area, scanning electron modified with chemical vapor deposition (CVD). The samples were microscopy (SEM), pore size distribution a... Viscose activated carbon fibers (ACFs) were characterized using specific surface area, scanning electron modified with chemical vapor deposition (CVD). The samples were microscopy (SEM), pore size distribution and Fourier transform infrared spectroscopy (FTIR). Batch adsorption experiments were carried out to investigate the adsorption behavior of modified ACFs for methyl orange(MO) from its aqueous solutions. The results show that the adsorption isotherms of MO onto modified ACFs well follows the Langmuir isotherm equation. The adsorption kinetics of MO can be well described by the pseudo second-order kinetic model. The adsorption process involves the intra-particle diffusion, but is not the only rate-controlling step. Thermodynamic parameters including AG, AH and AS were calculated, suggesting that the adsorption of MO onto modified ACFs is a spontaneous, exothermic and physisorption process. FTIR result indicates that the major adsorption mechanism of modified ACFs for MO is hydrogen bond. 展开更多
关键词 viscose activated carbon fiber chemical vapor deposition MODIFICATION methyl orange adsorption isotherm kinetics THERMODYNAMICS
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衬底温度对热丝CVD法沉积氧化钨的影响研究
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作者 张旭 郭丛 +2 位作者 陈涛 俞健 唐水花 《太阳能学报》 北大核心 2025年第3期335-341,共7页
通过热丝化学气相沉积法制备氧化钨(WOx)薄膜,并将其应用于无掺杂异质结太阳电池。研究表明,衬底温度在沉积过程中起着重要作用,衬底温度从室温升高到200℃,WOx薄膜的表面颗粒尺寸减小,薄膜更加致密;功函数先升高再迅速下降;透过率在15... 通过热丝化学气相沉积法制备氧化钨(WOx)薄膜,并将其应用于无掺杂异质结太阳电池。研究表明,衬底温度在沉积过程中起着重要作用,衬底温度从室温升高到200℃,WOx薄膜的表面颗粒尺寸减小,薄膜更加致密;功函数先升高再迅速下降;透过率在150℃以内无明显变化,继续升高温度后迅速降低。通过取代p型非晶硅层,将其应用于无掺杂硅异质结太阳电池中作为空穴选择接触层。在衬底温度为100℃的条件下,利用高透明的WOx层,获得最佳转换效率为14.63%的太阳电池。 展开更多
关键词 晶体硅太阳电池 钨化合物 薄膜 化学气相沉积 温度 衬底
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RF-PECVD制备铜基石墨烯薄膜及其力学性能研究
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作者 马会中 及元书 张兰 《热加工工艺》 北大核心 2025年第2期59-63,67,共6页
采用射频等离子体化学气相沉积设备,以甲烷为气相碳源,以紫铜箔片为基底制备石墨烯薄膜镀层。研究了温度对其力学性能的影响。结果表明:随反应温度的增加,铜基石墨烯薄膜的平均摩擦系数呈下降趋势,其显微硬度与抗腐蚀能力均呈先上升后... 采用射频等离子体化学气相沉积设备,以甲烷为气相碳源,以紫铜箔片为基底制备石墨烯薄膜镀层。研究了温度对其力学性能的影响。结果表明:随反应温度的增加,铜基石墨烯薄膜的平均摩擦系数呈下降趋势,其显微硬度与抗腐蚀能力均呈先上升后下降趋势。当温度为750℃时,铜基石墨烯薄膜缺陷度相对达到最低,微观形貌平整性与覆盖率最高,其平均摩擦系数、显微硬度与腐蚀电位分别为0.186、113.6 HV、0.805 V。此时,样品的综合力学性能达到相对最优值。 展开更多
关键词 射频等离子体化学气相沉积 铜基石墨烯薄膜 力学性能 温度因素
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RF-PECVD生长参数对石墨烯薄膜品质的影响
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作者 袁强华 任江枫 殷桂琴 《真空科学与技术学报》 北大核心 2025年第2期98-105,共8页
对比不同工艺参数条件下生长的石墨烯薄膜的形貌和品质,分别研究了高频功率、放电气压、气体流量比、生长时间、生长温度以及基底种类对双频放电的RF-PECVD制备的石墨烯薄膜品质影响。实验结果表明,石墨烯的缺陷程度随着高频功率的增加... 对比不同工艺参数条件下生长的石墨烯薄膜的形貌和品质,分别研究了高频功率、放电气压、气体流量比、生长时间、生长温度以及基底种类对双频放电的RF-PECVD制备的石墨烯薄膜品质影响。实验结果表明,石墨烯的缺陷程度随着高频功率的增加而降低,但是薄膜的厚度随着高频功率的增加而减小。在3 Torr及5 Torr的条件下,石墨烯薄膜存在着较多的边界状缺陷。甲烷/氩气流量比为10:30、生长时间为40 min时,能够生长出品质较好的石墨烯薄膜。生长温度对石墨烯薄膜的生长影响较大,在300℃时,镍基底表面无法生长出石墨烯薄膜,并且生长温度低于600℃时,都无法生长出品质较好的石墨烯薄膜。最后发现,相同的生长条件,在镍基底上生长的石墨烯薄膜厚度更小,但是铜基底生长的石墨烯薄膜缺陷更少,品质更好,这与薄膜在两种基底上不同的生长方式有关。 展开更多
关键词 射频等离子体增强化学气相沉积 双频放电 石墨烯薄膜
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GROWTH MECHANISM OF TiC WHISKERS PREMRED BY A MODIFIED CHEMICAL VAPOR DEPOSITION METHOD 被引量:7
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作者 J.S. Pan and Y. W. Yuan (Department of Materials Science and Engineering, Tsinghua Universityt Beijing 100084, China)(Department of Materials Science and Engineering, Tsinghua Universityt Beijing 100084, China) 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 1999年第3期278-282,共5页
High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciabl... High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciable effect on the whisker growth.The whisker orientations and morphology are determined by X-my diffraction (XRD),scanning electron micmpmph (SEM) and transmission electron microgmph (TEM).In addition to the spherical tips, spiral growth microsteps and obvious terraces are observed at the tips and side faces of whiskers in the present eoperiment. The whiskers grow mostly along (100) direction. The whisker growth mechanism is discussed in detail. 展开更多
关键词 TIC WHISKER chemical vapor deposition (cvd) growth mechanism
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Microstructure evolution and mechanical properties of Ti-B-N coatings deposited by plasma-enhanced chemical vapor deposition 被引量:13
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作者 Jung Ho SHIN Kwang Soo CHOI +2 位作者 Tie-gang WANG Kwang Ho KIM Roman NOWAK 《中国有色金属学会会刊:英文版》 CSCD 2012年第S3期722-728,共7页
Ternary Ti-B-N coatings were synthesized on AISI 304 and Si wafer by plasma-enhanced chemical vapor deposition (PECVD) technique using a gaseous mixture of TiCl4,BCl3,H2,N2,and Ar.By virtue of X-ray diffraction analys... Ternary Ti-B-N coatings were synthesized on AISI 304 and Si wafer by plasma-enhanced chemical vapor deposition (PECVD) technique using a gaseous mixture of TiCl4,BCl3,H2,N2,and Ar.By virtue of X-ray diffraction analysis,X-ray photoelectron spectroscopy,scanning electron microscope,and high-resolution transmission electron microscope,the influences of B content on the microstructure and properties of Ti B N coatings were investigated systematically.The results indicated that the microstructure and mechanical properties of Ti-B-N coatings largely depend on the transformation from FCC-TiN phase to HCP-TiB2 phase.With increasing B content and decreasing N content in the coatings,the coating microstructure evolves gradually from FCC-TiN/a-BN to HCP-TiB2 /a-BN via FCC-TiN+HCP-TiB2/a-BN.The highest microhardness of about 34 GPa is achieved,which corresponds to the nanocomposite Ti-63%B-N (mole fraction) coating consisting of the HCP-TiB2 nano-crystallites and amorphous BN phase.The lowest friction-coefficient was observed for the nanocomposite Ti-41%B-N (mole fraction) coating consisting of the FCC-TiN nanocrystallites and amorphous BN 展开更多
关键词 Ti-B-N COATING plasma-enhanced chemical vapor deposition (PEcvd) nanocomposite COATING hardness friction coefficient
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Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition
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作者 史慧玲 马骁宇 +1 位作者 胡理科 崇峰 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第1期12-16,共5页
ZnO thin films were grown on GaAs (001) substrates by metal-organic chemical vapor deposition (MOCVD) at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precu... ZnO thin films were grown on GaAs (001) substrates by metal-organic chemical vapor deposition (MOCVD) at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precursor, respectively. The effects of the growth temperatures on the growth characteristics and optical properties of ZnO films were investigated. The X-ray diffraction measurement (XRD) results indicated that all the thin films were grown with highly c- axis orientation. The surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. Although there was no evidence of epitaxial growth, the scanning electron microscopy (SEM) image of ZnO film grown at 400℃ revealed the presence of ZnO microcrystallines with closed packed hexagon structure. The photoluminescence spectrum at room temperature showed only bright band-edge (3. 33eV) emissions with little or no deep-level e- mission related to defects. 展开更多
关键词 metal-organic chemical vapor deposition ZnO film GAAS LOW-TEMPERATURE
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Technical Challenges and Progress in Fluidized Bed Chemical Vapor Deposition of Polysilicon 被引量:12
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作者 李建隆 陈光辉 +2 位作者 张攀 王伟文 段继海 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2011年第5期747-753,共7页
Various methods for production of polysilicon have been proposed for lowering the production cost andenergy consumption, and enhancing productivity, which are critical for industrial applications. The fluidized bed ch... Various methods for production of polysilicon have been proposed for lowering the production cost andenergy consumption, and enhancing productivity, which are critical for industrial applications. The fluidized bed chemical vapor deposition (FBCVD) method is a most promising alternative to conventional ones, but the homogeneous reaction of silane in FBCVD results in unwanted formation of fines, which will affect the product qualityand output. There are some other problems, such as heating degeneration due to undesired polysilicon deposition on the walls of the reactor and the heater. This article mainly reviews the technological development on FBCVD of polycrystalline silicon and the research status for solving the above problems. It also identifies a number of challenges to tackle and principles should be followed in the design ofa FBCVD reactor. 展开更多
关键词 fluidized bed chemical vapor deposition fine particles homogeneous reaction
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Two Step Chemical Vapor Deposition of In2Se3/MoSe2 van der Waals Heterostructures
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作者 陈玉林 李铭领 +6 位作者 吴一鸣 李思嘉 林岳 杜冬雪 丁怀义 潘楠 王晓平 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2017年第3期325-332,I0002,共9页
Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic de... Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices. 展开更多
关键词 van der Waals heterostructures chemical vapor deposition In2Sea/MoSe2 Kevin probe force microscopy n+-n junction
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Science Letters:Development of supported boron-doping TiO_2 catalysts by chemical vapor deposition 被引量:4
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作者 Xing-wang ZHANG Le-cheng LEI 《Journal of Zhejiang University-Science A(Applied Physics & Engineering)》 SCIE EI CAS CSCD 2008年第1期109-112,共4页
In this study, supported nonmetal (boron) doping TiO2 coating photocatalysts were prepared by chemical vapor deposition (CVD) to enhance the activity under visible light irradiation and avoid the recovering of TiO2. B... In this study, supported nonmetal (boron) doping TiO2 coating photocatalysts were prepared by chemical vapor deposition (CVD) to enhance the activity under visible light irradiation and avoid the recovering of TiO2. Boron atoms were successfully doped into the lattice of TiO2 through CVD, as evidenced from XPS analysis. B-doped TiO2 coating catalysts showed drastic and strong absorption in the visible light range with a red shift in the band gap transition. This novel B-TiO2 coating photocatalyst showed higher photocatalytic activity in methyl orange degradation under visible light irradiation than that of the pure TiO2 photocatalyst. 展开更多
关键词 chemical vapor deposition cvd TiO2 BORON Visible light PHOTOCATALYSIS
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Texture Evolutions in Fe-6.5%Si Produced by Rapid Solidification and Chemical Vapor Deposition 被引量:3
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作者 Liang ZUO Guangyong HU +1 位作者 Yuhui SHA Claude ESLING 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2002年第6期516-518,共3页
Fe-Si ribbons and thin sheets with 6.5%Si content were prepared by means of the single roller rapid solidification and chemical vapor deposition (CVD), respectively. The initial textures of rapidly solidified Fe-6.5%S... Fe-Si ribbons and thin sheets with 6.5%Si content were prepared by means of the single roller rapid solidification and chemical vapor deposition (CVD), respectively. The initial textures of rapidly solidified Fe-6.5%Si ribbons were characteristic of the {100} fiber-type, which became weakened during primary recrystallization in various atmospheres. At the stage of secondary recrystallization, the {100} texture formed in Ar and the {110} texture in hydrogen, while there occurred a texture transformation from the {100} type to the {110} type in vacuum with the increase of annealing temperature. For Fe-6.5%Si sheets prepared by Si deposition in cold-rolled Fe-3%Si matrix sheets, their textures were dominated by the η-fiber (<001>//RD) with the maximum density at the {120}<001> orientations. After homogenization annealing, the η-fiber could evolve into the {130}<001> type or become more concentrated on the {120}<001> orientations, depending on the cold rolling modes of Fe-3%Si matrix sheets. 展开更多
关键词 Fe-6.5%Si alloy TEXTURE Rapid solidification chemical vapor deposition
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Carbon nanotubes for supercapacitors:Consideration of cost and chemical vapor deposition techniques 被引量:3
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作者 Chao Zheng Weizhong Qian +4 位作者 Chaojie Cui Guanghui Xu Mengqiang Zhao Guili Tian Fei Wei 《Journal of Natural Gas Chemistry》 EI CAS CSCD 2012年第3期233-240,共8页
In this topic, we first discussed the requirement and performance of supercapacitors using carbon nanotubes (CNTs) as the electrode, including specific surface area, purity and cost. Then we reviewed the preparation... In this topic, we first discussed the requirement and performance of supercapacitors using carbon nanotubes (CNTs) as the electrode, including specific surface area, purity and cost. Then we reviewed the preparation technique of single wailed CNTs (SWNTs) in relatively large scale by chemical vapor deposition method. Its catalysis on the decomposition of methane and other carbon source, the reactor type and the process control strategies were discussed. Special focus was concentrated on how to increase the yield, selectivity, and purity of SWNTs and how to inhibit the formation of impurities, including amorphous carbon, multiwalled CNTs and the carbon encapsulated metal particles, since these impurities seriously influenced the performance of SWNTs in supercapacitors. Wish it be helpful to further decrease its product cost and for the commercial use in supercapacitors. 展开更多
关键词 SUPERCAPACITOR carbon nanotubes: chemical vapor deposition CATALYSIS methane
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Mg-doped ZnO radial spherical structures via chemical vapor deposition 被引量:2
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作者 PENG Jiangqiang GUO Jian DING Shulong XU Qiao LI Hang TAN Xuwei ZHAO Xian 《Rare Metals》 SCIE EI CAS CSCD 2011年第3期292-297,共6页
Mg-doped ZnO radial spherical structures with nanorods grown on both sides of the spherical shell were successfully prepared via chemical vapor deposition (CVD) of Zn and Mg powders in the absence of a catalyst. The... Mg-doped ZnO radial spherical structures with nanorods grown on both sides of the spherical shell were successfully prepared via chemical vapor deposition (CVD) of Zn and Mg powders in the absence of a catalyst. The structures associated with different growth temperatures (700, 800, and 850°C) were monitored by scanning electron microscopy (SEM), and the result shows that the length of the nanorods increase progressively with the growth temperature increasing. X-ray diffraction (XRD) shows that the as-obtained samples can be indexed to high crystallinity with wurtzite structure. The growth of the nanostructures mainly depends on the formation of sphere-like Mg-doped Zn droplets before adding oxygen. Photoluminescence (PL) spectra that show a 39 meV blue shift indicates that the band gap becomes large, because Mg substitutes Zn in the lattice. 展开更多
关键词 zinc oxide magnesium DOPING NANORODS chemical vapor deposition photoluminescence spectroscopy
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Microwave Plasma Chemical Vapor Deposition of Diamond Films on Silicon From Ethanol and Hydrogen 被引量:3
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作者 马志斌 满卫东 +1 位作者 汪建华 王传新 《Plasma Science and Technology》 SCIE EI CAS CSCD 2003年第2期1735-1741,共7页
Diamond films with very smooth surface and good optical quality have been deposited onto silicon substrate using microwave plasma chemical vapor deposition (MPCVD) from a gas mixture of ethanol and hydrogen at a low s... Diamond films with very smooth surface and good optical quality have been deposited onto silicon substrate using microwave plasma chemical vapor deposition (MPCVD) from a gas mixture of ethanol and hydrogen at a low substrate temperature of 450 ℃. The effects of the substrate temperature on the diamond nucleation and the morphology of the diamond film have been investigated and observed with scanning electron microscopy (SEM). The microstructure and the phase of the film have been characterized using Raman spectroscopy and X-ray diffraction (XRD). The diamond nucleation density significantly decreases with the increasing of the substrate temperature. There are only sparse nuclei when the substrate temperature is higher than 800 ℃ although the ethanol concentration in hydrogen is very high. That the characteristic diamond peak in the Raman spectrum of a diamond film prepared at a low substrate temperature of 450 ℃ extends into broadband indicates that the film is of nanophase. No graphite peak appeared in the XRD pattern confirms that the film is mainly composed of SP3 carbon. The diamond peak in the XRD pattern also broadens due to the nanocrystalline of the film. 展开更多
关键词 diamond film microwave plasma chemical vapor deposition ETHANOL
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Numerical modeling of SiC by low-pressure chemical vapor deposition from methyltrichlorosilane 被引量:6
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作者 Kang Guan Yong Gao +5 位作者 Qingfeng Zeng Xingang Luan Yi Zhang Laifei Cheng Jianqing Wu Zhenya Lu 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2020年第6期1733-1743,共11页
The development of functional relationships between the observed deposition rate and the experimental conditions is an important step toward understanding and optimizing low-pressure chemical vapor deposition(LPCVD)or... The development of functional relationships between the observed deposition rate and the experimental conditions is an important step toward understanding and optimizing low-pressure chemical vapor deposition(LPCVD)or low-pressure chemical vapor infiltration(LPCVI).In the field of ceramic matrix composites(CMCs),methyltrichlorosilane(CH3 SiCl3,MTS)is the most widely used source gas system for SiC,because stoichiometric SiC deposit can be facilitated at 900°C–1300°C.However,the reliability and accuracy of existing numerical models for these processing conditions are rarely reported.In this study,a comprehensive transport model was coupled with gas-phase and surface kinetics.The resulting gas-phase kinetics was confirmed via the measured concentration of gaseous species.The relationship between deposition rate and 24 gaseous species has been effectively evaluated by combining the special superiority of the novel extreme machine learning method and the conventional sticking coefficient method.Surface kinetics were then proposed and shown to reproduce the experimental results.The proposed simulation strategy can be used for different material systems. 展开更多
关键词 chemical vapor deposition MTS/H2 Gas-phase and surface kinetics Extreme learning machine method Numerical model
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Friction Behaviors of the Hot Filament Chemical Vapor Deposition Diamond Film under Ambient Air and Water Lubricating Conditions 被引量:2
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作者 SHEN Bin SUN Fanghong 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 2009年第5期658-664,共7页
The friction behavior of the hot filament chemical vapor deposition(HFCVD) diamond film plays a critical role on its applications in mechanical fields and largely depends on the environment. Studies on the tribologi... The friction behavior of the hot filament chemical vapor deposition(HFCVD) diamond film plays a critical role on its applications in mechanical fields and largely depends on the environment. Studies on the tribological properties of HFCVD diamond films coated on Co-cemented tungsten carbide (WC-Co) substrates are rarely reported in available literatures, especially in the water lubricating conditions. In this paper, conventional microcrystalline diamond(MCD) and fine-grained diamond(FGD) films are deposited on WC-Co substrates and their friction properties are evaluated on a reciprocating ball-on-plate tribometer, where they are brought to slide against ball-bearing steel and copper balls in dry and water lubricating conditions. Scanning electron microscopy(SEM), atomic force microscopy(AFM), surface profilometer and Raman spectroscopy are adopted to characterize as-deposited diamond films; SEM and energy dispersive X-ray(EDX) are used to investigate the worn region on the surfaces of both counterface balls and diamond films. The research results show that the friction coefficient of HFCVD diamond films always starts with a high initial value, and then gradually transits to a relative stable state. For a given counterface and a sliding condition, the FGD film presents lower stable friction coefficients by 0.02-0.03 than MCD film. The transferred materials adhered on sliding interface are supposed to have predominate effect on the friction behaviors of HFCVD diamond films. Furthermore, the effect of water lubricating on reducing friction coefficient is significant. For a given counterpart, the stable friction coefficients of MCD or FGD films reduce by about 0.07-0.08 while sliding in the water lubricating condition, relative to in dry sliding condition. This study is beneficial for widespread applications of HFCVD diamond coated mechanical components and adopting water lubricating system, replacing ofoil lubricating, in a variety of mechanical processing fields to implement the green production process. 展开更多
关键词 Hot filament chemical vapor deposition(HFcvd diamond films friction behavior water lubricating
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