综合报道了本实验室关于黄铜矿类I-III-VI2型系列晶体的研究进展。采用两温区气相输运温度振荡法合成出高纯、单相、致密的多晶材料,在三温区立式炉中用坩埚旋转下降法生长出AgGaS2、AgGaSe2和AgGa1-xInxSe2等系列单晶体,X射线单晶衍射...综合报道了本实验室关于黄铜矿类I-III-VI2型系列晶体的研究进展。采用两温区气相输运温度振荡法合成出高纯、单相、致密的多晶材料,在三温区立式炉中用坩埚旋转下降法生长出AgGaS2、AgGaSe2和AgGa1-xInxSe2等系列单晶体,X射线单晶衍射谱和回摆谱表明晶体的结晶性好,结构完整;红外透过率接近理论值,吸收系数低于0.017 cm-1,表明生长的晶体光学质量高。研究出一种新的能对AgGa1-xInxSe2晶体(112)晶面进行择优腐蚀的腐蚀剂:(30 g CrO3+10 mL H2O)∶H4PO4(85%)∶HNO3(65～68%)∶HF(40%)=10∶10∶10∶2(体积比),在60℃下腐蚀40 min,能够清晰地显示出AgGa1-xInxSe2晶体(112)面取向一致的三角形腐蚀坑,边界清晰,蚀坑密度大约为105/cm2数量级。采用自行研制的晶体定向切割新方法,加工出AgGa1-xInxSe2-OPO器件,获得了3～5μm的激光输出,光-光转换效率达21%。展开更多
A tunable continuous wave（cw） mid-infrared（MIR） laser based on difference-frequency generation（DFG） in a 1.5-cm long AgGaS2 nonlinear crystal for trace gas detection is reported.Two visible and near-infrared dio...A tunable continuous wave（cw） mid-infrared（MIR） laser based on difference-frequency generation（DFG） in a 1.5-cm long AgGaS2 nonlinear crystal for trace gas detection is reported.Two visible and near-infrared diode lasers were used as pump and signal sources.The MIR-DFG laser was tunable in a wavelength range of 4.75 μm-4.88 μm.The phase-matching（PM） condition was non-critically achieved by adjusting the temperature of the crystal for fixed pairs of input pump and signal wavelengths.The required PM temperatures of the generated MIR-DFG wavelengths have been calculated by using three sets of recent Sellmeier equations and the temperature-dispersion equations of AgGaS2 given by Willer U,et al.（Willer U,Blanke T and Schade W 2001 Appl.Opt.40 5439）.Then the calculated PM temperatures are compared with the experimental values.The performance of the MIR-DFG laser is shown by the trace detection of the P（16） carbon monoxide（12C16O） absorption line in a laboratory-fabricated absorption cell.The enhanced sensitivity of about 0.6×10 4 was obtained through the long path absorption provided by consecutive reflections between coated cylindrical mirrors of a constructed cell.展开更多
This note reports a new procedure of polycrystalline synthesis and a new technique of single crystal growth on AgGaS2, i.e. two-zone temperature oscillation vapor transporting and descending crucible with rotation. A ...This note reports a new procedure of polycrystalline synthesis and a new technique of single crystal growth on AgGaS2, i.e. two-zone temperature oscillation vapor transporting and descending crucible with rotation. A single phase dense AgGaS2 polycrystalline ingot was synthesized, and a crack-free AgGaS2 single crystal with 15 mm in diameter and 30 mm in length was grown by the techniques mentioned above. Structure integrity of the crystal was studied by the X-ray diffraction technique. Six order X-ray spectra from the {011} face of the crystal were obtained, and an anomalous phenomenon was observed for the first time that intensity of the higher order diffraction peak is much stronger than that of the lower order diffraction peak. Etch-pits of the crystal were observed by the scanning electron microscopy (SEM).展开更多
文摘综合报道了本实验室关于黄铜矿类I-III-VI2型系列晶体的研究进展。采用两温区气相输运温度振荡法合成出高纯、单相、致密的多晶材料,在三温区立式炉中用坩埚旋转下降法生长出AgGaS2、AgGaSe2和AgGa1-xInxSe2等系列单晶体,X射线单晶衍射谱和回摆谱表明晶体的结晶性好,结构完整;红外透过率接近理论值,吸收系数低于0.017 cm-1,表明生长的晶体光学质量高。研究出一种新的能对AgGa1-xInxSe2晶体(112)晶面进行择优腐蚀的腐蚀剂:(30 g CrO3+10 mL H2O)∶H4PO4(85%)∶HNO3(65～68%)∶HF(40%)=10∶10∶10∶2(体积比),在60℃下腐蚀40 min,能够清晰地显示出AgGa1-xInxSe2晶体(112)面取向一致的三角形腐蚀坑,边界清晰,蚀坑密度大约为105/cm2数量级。采用自行研制的晶体定向切割新方法,加工出AgGa1-xInxSe2-OPO器件,获得了3～5μm的激光输出,光-光转换效率达21%。
文摘A tunable continuous wave（cw） mid-infrared（MIR） laser based on difference-frequency generation（DFG） in a 1.5-cm long AgGaS2 nonlinear crystal for trace gas detection is reported.Two visible and near-infrared diode lasers were used as pump and signal sources.The MIR-DFG laser was tunable in a wavelength range of 4.75 μm-4.88 μm.The phase-matching（PM） condition was non-critically achieved by adjusting the temperature of the crystal for fixed pairs of input pump and signal wavelengths.The required PM temperatures of the generated MIR-DFG wavelengths have been calculated by using three sets of recent Sellmeier equations and the temperature-dispersion equations of AgGaS2 given by Willer U,et al.（Willer U,Blanke T and Schade W 2001 Appl.Opt.40 5439）.Then the calculated PM temperatures are compared with the experimental values.The performance of the MIR-DFG laser is shown by the trace detection of the P（16） carbon monoxide（12C16O） absorption line in a laboratory-fabricated absorption cell.The enhanced sensitivity of about 0.6×10 4 was obtained through the long path absorption provided by consecutive reflections between coated cylindrical mirrors of a constructed cell.
基金This work was supported by the Sichuan Provincial Research Foundation of of China (Grant No: 99-479).
文摘This note reports a new procedure of polycrystalline synthesis and a new technique of single crystal growth on AgGaS2, i.e. two-zone temperature oscillation vapor transporting and descending crucible with rotation. A single phase dense AgGaS2 polycrystalline ingot was synthesized, and a crack-free AgGaS2 single crystal with 15 mm in diameter and 30 mm in length was grown by the techniques mentioned above. Structure integrity of the crystal was studied by the X-ray diffraction technique. Six order X-ray spectra from the {011} face of the crystal were obtained, and an anomalous phenomenon was observed for the first time that intensity of the higher order diffraction peak is much stronger than that of the lower order diffraction peak. Etch-pits of the crystal were observed by the scanning electron microscopy (SEM).
