A novel fully-depleted dual-gate MOSFET with a hetero-material gate and a lightly-doped drain is proposed. The hetero-material gate, which consists of a main gate and two side-gates,is used to control the surface pote...A novel fully-depleted dual-gate MOSFET with a hetero-material gate and a lightly-doped drain is proposed. The hetero-material gate, which consists of a main gate and two side-gates,is used to control the surface potential distribution. The fabrication process and the device characteristics are simulated with Tsuprem-4 and Medici separately. Compared to a common DG fully depleted SO1 MOSFET,the proposed device has much higher on/off current ratio and superior sub-threshold slope. The on/off current ratio is about 10^10 and the sub-threshold slope is nearly 60mV/dec under a 0.18μm process.展开更多
基金Supported by Natural Science Foundation of Hebei Province of China(No.F2020202015)Innovation Method Fund of China(No.2020IM020600)+1 种基金Research Projects of Undergraduate Education and Teaching Reform of Hebei University of Technology of China(No.201903006)Ministry of Education Industry-University Cooperative Education Program of China(No.202102026001)。
文摘A novel fully-depleted dual-gate MOSFET with a hetero-material gate and a lightly-doped drain is proposed. The hetero-material gate, which consists of a main gate and two side-gates,is used to control the surface potential distribution. The fabrication process and the device characteristics are simulated with Tsuprem-4 and Medici separately. Compared to a common DG fully depleted SO1 MOSFET,the proposed device has much higher on/off current ratio and superior sub-threshold slope. The on/off current ratio is about 10^10 and the sub-threshold slope is nearly 60mV/dec under a 0.18μm process.
