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无外力渗透泵膜器件的选用
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作者 李汶钊 米智楠 《流体传动与控制》 2010年第6期28-30,共3页
海洋是巨大资源宝库,其中海底气体水合物已成为引人注目的潜在能源资源。采用无外力渗透泵获取海底气体水合物是提供持续稳定采样动力的理想选择。作为无外力渗透泵的主要动力部件,文章对膜器件工作原理进行介绍,并对不同类型膜器件进... 海洋是巨大资源宝库,其中海底气体水合物已成为引人注目的潜在能源资源。采用无外力渗透泵获取海底气体水合物是提供持续稳定采样动力的理想选择。作为无外力渗透泵的主要动力部件,文章对膜器件工作原理进行介绍,并对不同类型膜器件进行比较,通过实验选择无外力渗透泵使用的膜器件。 展开更多
关键词 渗透泵 膜器件 半透 选用
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ECR Plasma CVD淀积光电器件介质膜的工艺模拟
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作者 谭满清 陆建祖 李玉鉴 《功能材料与器件学报》 CAS CSCD 2000年第3期248-251,共4页
以实验数据为基础,运用人工神经网络方法,建立了电子回旋共振等离子体化学气相沉积(ECRPlasmaCVD)淀积硅的氮、氧化物介质膜的折射率、速率与气流配比Q(N2)/Q(SiH4)和Q(O2)/Q(SiH4)关系的数学模型,此模型在给定气流配比Q(N2)/Q(SiH4)和Q... 以实验数据为基础,运用人工神经网络方法,建立了电子回旋共振等离子体化学气相沉积(ECRPlasmaCVD)淀积硅的氮、氧化物介质膜的折射率、速率与气流配比Q(N2)/Q(SiH4)和Q(O2)/Q(SiH4)关系的数学模型,此模型在给定气流配比Q(N2)/Q(SiH4)和Q(O2)/Q(SiH4)时所预测的成模折射率跟实验值符合得很好,为ECRPlasmaCVD淀积全介质光学膜的工艺打下坚实的基础。 展开更多
关键词 ECRPlasmaCVD 光电器件介质 工艺模拟 沉积
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薄膜光学 薄膜材料与器件
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《中国光学》 CAS 2005年第4期63-63,共1页
O484.41 2005042879 窄带薄膜偏光分束镜的研制及其性能测试=Design and test of narrow wavelength thin film polarizing beam-split- ting prism[刊,中]/孔伟金(曲阜师范大学激光研究所.山东,曲阜(273165)),吴福全…//光子学报... O484.41 2005042879 窄带薄膜偏光分束镜的研制及其性能测试=Design and test of narrow wavelength thin film polarizing beam-split- ting prism[刊,中]/孔伟金(曲阜师范大学激光研究所.山东,曲阜(273165)),吴福全…//光子学报.-2004,33 (11),-1373-1376 采用非MacNeille形式的薄膜偏光分束镜的设计,在 K9基体上交替镀制了ZrO2和SiO2薄膜,从而在690 nm 处实现了p光和s光的偏振分光。 展开更多
关键词 测试结果 晶硅薄 膜器件 偏光分束镜 光学 材料 均匀性 性能测试 制备 气压
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膜萃取器设计及应用研究进展 被引量:14
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作者 王绍洪 王红军 +1 位作者 徐志康 徐又一 《膜科学与技术》 CAS CSCD 北大核心 2002年第1期39-43,共5页
简要阐述了膜萃取的特点和基本类型;重点介绍了轴对称、纤维、片状等3种膜器的设计原理、特征以及膜过程设计.总结了膜萃取技术在金属离子分离、旋光化合物的分离、发酵萃取、医药萃取等方面的应用现状和最新进展;展望了膜萃取技术的... 简要阐述了膜萃取的特点和基本类型;重点介绍了轴对称、纤维、片状等3种膜器的设计原理、特征以及膜过程设计.总结了膜萃取技术在金属离子分离、旋光化合物的分离、发酵萃取、医药萃取等方面的应用现状和最新进展;展望了膜萃取技术的发展趋势。 展开更多
关键词 萃取器 设计 应用 研究进展 萃取 膜器件
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膜-生物反应器的研究及其在废水处理中的应用 被引量:14
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作者 王建华 徐又一 朱宝库 《膜科学与技术》 CAS CSCD 北大核心 2003年第4期224-233,共10页
综述了废水处理领域中的膜 -生物反应器的基本特点、应用现状、存在的问题以及国内外研究的进展 ;重点阐述了膜 -生物反应器运行工艺、新型膜材料与器件以及影响膜污染形成的因素与防治措施 ;
关键词 -生物反应器 研究 废水处理 应用 污染 材料 膜器件 污染
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对异型硅岛实现的厚膜全耗尽SOI MOSFET的模拟研究
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作者 杨胜齐 何进 +1 位作者 黄如 张兴 《电子学报》 EI CAS CSCD 北大核心 2002年第11期1605-1608,共4页
本文提出了用异型硅岛实现的厚膜全耗尽 (FD)SOIMOSFET的新结构 ,并分析了其性能与结构参数的关系 .通过在厚膜SOIMOSFET靠近背栅的界面形成一个相反掺杂的硅岛 ,从而使得厚膜SOIMOSFET变成全耗尽器件 .二维模拟显示 ,通过对异型硅岛的... 本文提出了用异型硅岛实现的厚膜全耗尽 (FD)SOIMOSFET的新结构 ,并分析了其性能与结构参数的关系 .通过在厚膜SOIMOSFET靠近背栅的界面形成一个相反掺杂的硅岛 ,从而使得厚膜SOIMOSFET变成全耗尽器件 .二维模拟显示 ,通过对异型硅岛的宽度、厚度、掺杂浓度以及在沟道中位置的分析与设计 ,厚膜SOIMOSFET不仅实现了全耗尽 ,从而克服了其固有的Kink效应 ,而且驱动电流也大大增加 ,器件速度明显提高 ,同时短沟性能也得到改善 .模拟结果证明 :优化的异型硅岛应该位于硅膜的底部中央处 ,整个宽度约为沟道长度的五分之三 ,厚度大约等于硅膜厚度的一半 ,掺杂浓度只要高出硅膜的掺杂浓度即可 .重要的是 ,异型硅岛的设计允许其厚度、宽度、掺杂浓度以及位置的较大波动 .可以看出 。 展开更多
关键词 异型硅岛 全耗尽SOI KINK效应 集成电路 膜器件
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添加剂和溶剂退火协同优化制备高性能厚膜有机太阳能电池
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作者 杨航 凡晨岭 +3 位作者 崔乃哲 李肖肖 张雯婧 崔超华 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2023年第9期110-117,共8页
通过溶剂添加剂1-氯萘(CN)和二硫化碳(CS_2)溶剂退火(SVA)协同优化了基于窄带隙小分子受体的厚膜活性层形貌,揭示了该策略对共混膜形貌的调控机理,研究了其对活性层中的载流子动力学以及器件光伏性能的影响.结果表明,CN添加剂可以有效... 通过溶剂添加剂1-氯萘(CN)和二硫化碳(CS_2)溶剂退火(SVA)协同优化了基于窄带隙小分子受体的厚膜活性层形貌,揭示了该策略对共混膜形貌的调控机理,研究了其对活性层中的载流子动力学以及器件光伏性能的影响.结果表明,CN添加剂可以有效促进受体材料结晶聚集,CS_2溶剂退火能够进一步提升活性层材料分子堆积的有序性,同时优化给受体材料相分离尺寸,降低共混膜表面的粗糙度,实现了良好的纳米尺寸相分离形貌.基于CN+SVA处理的PM6∶Y6厚膜(300 nm)器件的电荷传输和复合性质得到改善,取得了15.23%的光电转换效率(PCE),显著高于未经处理(PCE=11.75%)和仅用CN处理(PCE=13.48%)的光伏器件.该策略具有良好的适用性,将基于PTQ10∶m-BTP-PhC6器件的光伏性能从13.22%提升至16.92%. 展开更多
关键词 有机太阳能电池 膜器件 活性层形貌 液体添加剂 溶剂退火
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光电极值法测厚多层介质膜镀膜机性能的几点改进
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作者 李之慧 陶然·瓦吉地 杨雅丽 《四川激光》 1981年第A02期120-120,共1页
我们对“光电极值法”测厚多层介质膜镀膜机的性能作了改进,取得了明显的效果,可以说几个主要指标;如保持基片和膜层的清洁,膜层厚度的相对精度、低消耗电量,设备简单上以及调整光电路的节省时间等,都达到了同类型镀膜机的先进水... 我们对“光电极值法”测厚多层介质膜镀膜机的性能作了改进,取得了明显的效果,可以说几个主要指标;如保持基片和膜层的清洁,膜层厚度的相对精度、低消耗电量,设备简单上以及调整光电路的节省时间等,都达到了同类型镀膜机的先进水平。另外,我们的实验还可能对要求保持高度清洁的其它镀膜器件提供一些解决问题的途径。此外,对改进本类型镀膜机的设计也提供了一些重要的参考。 展开更多
关键词 多层介质 光电极值法 测厚 层厚度 相对精度 先进水平 耗电量 膜器件 类型
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Freestanding oxide membranes:synthesis,tunable physical properties,and functional devices
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作者 Ao Wang Jinfeng Zhang Lingfei Wang 《中国科学技术大学学报》 CAS CSCD 北大核心 2024年第7期2-17,1,I0002,共18页
The study of oxide heteroepitaxy has been hindered by the issues of misfit strain and substrate clamping,which impede both the optimization of performance and the acquisition of a fundamental understanding of oxide sy... The study of oxide heteroepitaxy has been hindered by the issues of misfit strain and substrate clamping,which impede both the optimization of performance and the acquisition of a fundamental understanding of oxide systems.Recently,however,the development of freestanding oxide membranes has provided a plausible solution to these substrate limitations.Single-crystalline functional oxide films can be released from their substrates without incurring significant damage and can subsequently be transferred to any substrate of choice.This paper discusses recent advancements in the fabrication,adjustable physical properties,and various applications of freestanding oxide perovskite films.First,we present the primary strategies employed for the synthesis and transfer of these freestanding perovskite thin films.Second,we explore the main functionalities observed in freestanding perovskite oxide thin films,with special attention to the tunable functionalities and physical properties of these freestanding perovskite membranes under varying strain states.Next,we encapsulate three representative devices based on freestanding oxide films.Overall,this review highlights the potential of freestanding oxide films for the study of novel functionalities and flexible electronics. 展开更多
关键词 freestanding oxide membranes transition metal oxides thin films electronic devices
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A Generalized Reynolds' Equation For Squeeze-Film Air Damping in MEMS 被引量:5
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作者 鲍敏杭 孙远程 +1 位作者 杨恒 王跃林 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第12期1245-1248,共4页
A differential equation that is generally effective for squeeze film air damping of perforated plate and non perforated plate as well as in MEMS devices is developed.For perforated plate,the thickness and the dimens... A differential equation that is generally effective for squeeze film air damping of perforated plate and non perforated plate as well as in MEMS devices is developed.For perforated plate,the thickness and the dimensions of the plate are not limited.With boundary conditions,pressure distribution and the damping force on the plate can be found by solving the differential equation.Analytical expressions for damping pressure and damping force of a long strip holeplate are presented with a finite thickness and a finite width.To the extreme conditions of very thin plate and very thin hole,the results are reduced to the corresponding results of the conventional Reynolds' equation.Thus, the effectiveness of the generalized differential equation is justified.Therefore,the generalized Reynolds' equation will be a useful tool of design for damping structures in MEMS. 展开更多
关键词 squeeze film air damping MEMS Reynolds' equation
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Development of Novel Thin-Film SOI High Voltage MOSFET 被引量:1
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作者 李文宏 罗晋生 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第12期1261-1265,共5页
Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experim... Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experiments show that the breakdown voltages of the two-drift-region and general structures are 26V and 17V,respectively,and the on resistances are 65Ω and 80Ω,respectively. 展开更多
关键词 SOI MOSFET high voltage device
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Electron Injection Enhancement by Diamond-Like Carbon Film in Polymer Electroluminescence Devices
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作者 李宏建 闫玲玲 +4 位作者 黄伯云 易丹青 胡锦 何英旋 彭景翠 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第1期30-34,共5页
A diamond-like carbon (DLC) film is deposited as an electron injection layer between the polymer light-emitting layer(MEH-PPV) and aluminum (Al) cathode electrode in polymer electroluminescence devices (PLEDs)... A diamond-like carbon (DLC) film is deposited as an electron injection layer between the polymer light-emitting layer(MEH-PPV) and aluminum (Al) cathode electrode in polymer electroluminescence devices (PLEDs) using a radio frequency plasma deposition system. The source material of the DLC is n-butylamine. The devices consist of indium tin oxide (ITO)/MEH-PPV/DLC/Al. Electron injection properties are investigated through I-V characteristics,and the mechanism of electron injection enhancement due to a thin DLC layer has been studied. It is found that: (1) a DLC layer thinner than 1.0nm leads to a higher turn-on voltage and decreased electroluminescent (EL) efficiency; (2) a 5.0nm DLC layer significantly enhances the electron injection and results in the lowest turn-on voltage and the highest EL efficiency; (3) DLC layer that exceeds 5.0nm results in poor device performance;and(4) EL emission can hardly be detected when the layer exceeds 10.0nm. The properties of ITO/MEH-PPV/DLC/Al and ITO/MEH-PPV/LiF/Al are investigated comparatively. 展开更多
关键词 diamond-like carbon polymer electroluminescence device electron injection enhancement
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Dependence of R-G Currenton Bulk Traps Characteristics and Silicon Film Structure in SOI Gated-Diode
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作者 何进 黄如 +2 位作者 张兴 孙飞 王阳元 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第1期18-24,共7页
The dependence of the Recombination- Generation( R- G) current on the bulk trap characteristics and sili- con film structure in SOI lateral p+ p- n+ diode has been analyzed num erically by using the simulation tool,D... The dependence of the Recombination- Generation( R- G) current on the bulk trap characteristics and sili- con film structure in SOI lateral p+ p- n+ diode has been analyzed num erically by using the simulation tool,DESSIS- ISE.By varying the bulk trap characteristics such as the trap density and energy level spectrum systematically,the dependence of the R- G current on both of them has been dem onstrated in details.Moreover,the silicon film doping concentration and thickness are changed to make silicon body varies from the fully- depletion m ode into the partial- ly- depletion one.The influence of the transfer of silicon body characteristics on the R- G currenthas also been care- fully examined.A better understanding is obtained of the behavior of bulk trap R- G current in the SOI lateral gat- ed- diode. 展开更多
关键词 R- G current bulk trap energy level silicon film structure SOI gated- diode
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Combination of Ozonation Process and Absorption through Membrane Contactor Using Natural Hot Spring Water as Absorbent to Remove Ammonia from Wastewater 被引量:1
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作者 Sutrasno Kartohardjono Milasari Herdiana Putri Sri Fahmiati Elvina Fitriasari Candrika Ajeng SetijoBismo 《Journal of Environmental Science and Engineering(A)》 2012年第4期428-433,共6页
Ammonia in wastewater is a major pollutant produced in industrial and agricultural wastewaters. Ammonia is often removed by conventional technologies such as pack tower aeration, biological treatment or adsorption as ... Ammonia in wastewater is a major pollutant produced in industrial and agricultural wastewaters. Ammonia is often removed by conventional technologies such as pack tower aeration, biological treatment or adsorption as ammonium ion onto zeolites. In many cases, conventional methods are very costly and inefficient, and therefore there is a need for an alternative separation technique for more efficient removal of ammonia from wastewaters. The aim of this study is to investigate the performance of combination of ozonation and absorption through membrane processes to remove ammonia from wastewater using NHSW (natural hot spring water) as absorbent. Experimental results show that hollow fiber membrane contactor has potential application for ammonia removal from wastewater. Operating variables such as time and pH of absorbent solution are found to remarkably influence the removal process efficiency.. Based on experimental results ozonation can improve ammonia removal efficiency through hollow fiber membrane contactor. Ammonia removal efficiencies and overall mass transfer coefficients increase with decreasing pH of absorbent solution. 展开更多
关键词 AMMONIA mass transfer membrane OZONATION removal efficiency.
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Electroluminescent Excitation Mechanism of Erbium-activated Zinc Sulfide Semiconductor Thin Film Devices
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作者 LIU Zhaohong WANG Yujiang +1 位作者 CHEN Zhenxiang LIU Ruitang(Xiamen University, Xiamen 361005, CHN) 《Semiconductor Photonics and Technology》 CAS 1996年第3期175-179,共5页
The electroluminescunce (EL) transient characteristics of erbium-doped zinc sulfide thin film (TF) devices excited by short rectangular pulses are studied, the luminescence delay after de-exciting and the relaxation l... The electroluminescunce (EL) transient characteristics of erbium-doped zinc sulfide thin film (TF) devices excited by short rectangular pulses are studied, the luminescence delay after de-exciting and the relaxation luminance peaks during decay are observed. A model description for energy transfer has been proposed. The experimental results can be theoretically explained with the computer curve fittings. 展开更多
关键词 Semiconductor Materials Thin Film Devices ELECTROLUMINESCENCE EL Displays
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Performance measurement of broadband, wide-angle polarizing beam splitter 被引量:3
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作者 CHEN Wei-bin ZHENG Zhen-rong +1 位作者 GU Pei-fu ZHANG Yue-guang 《Journal of Zhejiang University-Science A(Applied Physics & Engineering)》 SCIE EI CAS CSCD 2007年第2期176-179,共4页
Polarizing beam splitter (PBS) is a critical optical component in projection display system because PBS performance greatly influences the contrast and brightness of the system. PBS performance is usually measured by ... Polarizing beam splitter (PBS) is a critical optical component in projection display system because PBS performance greatly influences the contrast and brightness of the system. PBS performance is usually measured by spectrophotometer after coating and cementing, but the measured result cannot represent the actual performance in practice because people usually change the incident angle in one plane (horizontal plane) and do not consider the other plane (vertical plane). Geometrical polarization rotation occurring at reduced F-number influences the measuring precision of s-polarization transmittance (Ts) and p-polarization reflectance (Rp). A more accurate and practical way to measure the performance of broadband, wide-angle PBS is presented in this paper. 展开更多
关键词 Polarizing beam splitter (PBS) Projection display MEASUREMENT CONTRAST
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Measurement of the Residual Modal Reflectivity of AR Coating on a SLD
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作者 MA Dongge SHI Jiawei +2 位作者 LIU Mingda JIN Ensun GAO Dingsan(Jinn University, Changchun 130023, CHN) 《Semiconductor Photonics and Technology》 CAS 1996年第1期6-9,13,共5页
The superluminescent diode has been fabricated by applying an AR coating to the output facet of the semiconductor laser for the purpose of eliminating or suitably reducing the optical feedback. An exact method for mea... The superluminescent diode has been fabricated by applying an AR coating to the output facet of the semiconductor laser for the purpose of eliminating or suitably reducing the optical feedback. An exact method for measuring the modal reflectivity of the antireflection coating to a laser diode is described. It is based on measurements of the spectrum modulation depth of the resulting superluminescent diode output spectrum at arbitrary injection current, and modal reflectivity of less than 3 × 10-4 is obtained. 展开更多
关键词 Antireflection Coatings Optical Films Spectral Analysis OptoelectronicDevices
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Fabrication and characterization of Ce:YIG thin film
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作者 Yang Shuming Zhang Kun +1 位作者 Hu Qingjie Jiang Zhuangde 《Engineering Sciences》 EI 2013年第1期74-77,共4页
Yttrium iron garnet (YIG) is widely used for microwave ferrite devices, especially for optical isolators. In this paper, ferrite ceramic target using cerium (Ce)-substituted YIG was made using ferric oxide (Fe203... Yttrium iron garnet (YIG) is widely used for microwave ferrite devices, especially for optical isolators. In this paper, ferrite ceramic target using cerium (Ce)-substituted YIG was made using ferric oxide (Fe203), cerium oxide (CeO2) and yttrium oxide (Y2O3) powders as raw material. Ce: YIG thin films were fabricated by radio frequency (RF) magnetron sputtering. The experimental result showed that the polycrystalline YIG was obtained after sintering at 1 350 ℃ for 6 h, and the polycrystalline Ce: YIG thin films were achieved annealing up to 700 ℃ in the air. 展开更多
关键词 optical isolator Ce: YIG thin film CRYSTALLIZATION
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基于膜厚与分子量优化策略实现高效近红外有机光探测器 被引量:2
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作者 邱红 钟知鸣 +4 位作者 李美静 应磊 俞钢 黄飞 曹镛 《高分子学报》 SCIE CAS CSCD 北大核心 2022年第4期433-440,共8页
利用基于[1,2,3]三唑并[4,5-f]异吲哚-5,7(2H,6H)-二酮(TzBI)共轭聚合物PTzBI-Cl为给体,非富勒烯小分子Y6DT为受体,制备基于倒装结构的有机本体异质结光探测器.基于高分子量聚合物PTzBI-Cl-H制备的器件比低分子量材料制备的器件具有更... 利用基于[1,2,3]三唑并[4,5-f]异吲哚-5,7(2H,6H)-二酮(TzBI)共轭聚合物PTzBI-Cl为给体,非富勒烯小分子Y6DT为受体,制备基于倒装结构的有机本体异质结光探测器.基于高分子量聚合物PTzBI-Cl-H制备的器件比低分子量材料制备的器件具有更低的暗电流和更高的光探测性能.通过对PTzBI-Cl:Y6DT进行薄膜厚度调控,在保持较高的外量子效率的同时显著地降低了暗电流密度,提高了器件探测率.活性层厚度为330 nm时,光探测器在−0.1 V偏压下的暗电流为2.3×10^(−10)A·cm^(−2),在±2 V范围内整流比为10^(6).在−0.1 V偏压下器件在500~880 nm的工作波段的比探测率均高于10^(13)cm·Hz^(−1/2)·W^(−1),最大值位于830 nm处达到6.1×10^(13)cm·Hz^(−1/2)·W^(−1),R值为0.52 A·W^(−1),是目前报道的在830 nm波长二极管型倒装有机光探测最高值之一. 展开更多
关键词 有机光探测器 近红外 分子量 膜器件
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Manipulate energy transport via fluorinated spacers towards recordefficiency 2D Dion-Jacobson CsPbI_(3) solar cells 被引量:4
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作者 Yutian Lei Zhenhua Li +7 位作者 Haoxu Wang Qian Wang Guoqiang Peng Youkui Xu Haihua Zhang Gang Wang Liming Ding Zhiwen Jin 《Science Bulletin》 SCIE EI CSCD 2022年第13期1352-1361,M0004,共11页
Two-dimensional(2D)Dion-Jacobson(D-J)-type cesium lead iodide CsPbI_(3) perform remarkably in terms of stability.However,the complex interactions between spacer and inorganic layers limit its excellent progress in per... Two-dimensional(2D)Dion-Jacobson(D-J)-type cesium lead iodide CsPbI_(3) perform remarkably in terms of stability.However,the complex interactions between spacer and inorganic layers limit its excellent progress in perovskite solar cells(PSCs).Herein,starting from the considerable structural diversity of organic spacers,we engineer 2D CsPbI_(3) with fine-tuning functionalities.Specifically,for the first time we embedded fluorinated aromatic cations in 2D D-J CsPbI_(3),and successfully applied it into construction of high-performance PSCs.Compared with constitutive 1,4-diaminobenzene(PDA),the fluorinated 2-fluorobenzene-1,4-diamine(F-PDA)component greatly expands the dipole moment from 0.59 D to 3.47 D,which reduces the exciton binding energy of the system.A theoretical study shows that the spacer layer and inorganic plane are more enriched with charge accumulation in(F-PDA)Csn±1 Pb_(n)I_(3n+1).The results show that(F-PDA)Csn±1Pb_(n)I_(3n+1) demonstrates more significant charge transfer between organic and inorganic layers than(PDA)Csn±1 Pb_(n)I_(3n+1),and it is confirmed in the femtosecond transient absorption experiment.Moreover,the interactions of the fluorinated spacer with the[PbI_(6)]_(4)-plane effectively manipulate the crystallization quality,and thus the ion migration and defect formation of target 2D CsPbI_(3) are inhibited.As a result,we obtained a record power conversion efficiency(PCE)beyond 15%for 2D D-J(F-PDA)Cs_(3)Pb_(4)I_(13)(n=4)PSCs with significantly improved environmental stability compared with the three-dimensional(3D)counterparts. 展开更多
关键词 Dion-Jacobson CsPbI_(3) Fluorinated spacers Energy transport Interaction
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