运用MEMS工艺制备了不同耦合间距的微环谐振腔,针对耦合间距与耦合系数、谐振深度的影响,进行了理论分析与仿真,并对结构进行耦合实验测试。测试结果表明,随着微环耦合间距的增加,耦合系数减小,谐振深度变浅,这与理论仿真一致。实际计...运用MEMS工艺制备了不同耦合间距的微环谐振腔,针对耦合间距与耦合系数、谐振深度的影响,进行了理论分析与仿真,并对结构进行耦合实验测试。测试结果表明,随着微环耦合间距的增加,耦合系数减小,谐振深度变浅,这与理论仿真一致。实际计算了相应的耦合效率、3 d B带宽及品质因数,随着耦合间距增大,耦合效率降低,3 d B带宽也随之变窄,微环谐振腔的品质因数逐渐提高。研究结果为微环谐振腔的进一步优化设计及其在相关领域中的研究与应用提供了依据。展开更多
Considering the static stability and the change of the displacement volume, including the influences of higher order nonlinear terms and the instantaneous wave surface, the nonlinear coupled heave-pitch motion was est...Considering the static stability and the change of the displacement volume, including the influences of higher order nonlinear terms and the instantaneous wave surface, the nonlinear coupled heave-pitch motion was established in stochastic waves. The responses of heave-pitch coupling motion for the Truss Spar platform were investigated. It was found that, when the characteristic frequency of a stochastic wave is close to the natural heave frequency, the large amplitude pitch motion is induced under the parametric-forced excitation, which is called the Mathieu instability. It was observed that the heave mode energy is transferred to pitch mode when the heave motion amplitude exceeds a certain extent. In addition, the probability of internal resonant heave-pitch motion is greatly reduced while the characteristic wave frequency is away from the natural heave frequency.展开更多
TM564 96021279 Ge<sub>x</sub>Si<sub>1-x</sub>/Si异质结无间距定向耦合光开关模型分析=Modeling analysis of the Ge<sub>x</sub>Si<sub>1-x</sub>/Si heterojunctionzero-gap dire...TM564 96021279 Ge<sub>x</sub>Si<sub>1-x</sub>/Si异质结无间距定向耦合光开关模型分析=Modeling analysis of the Ge<sub>x</sub>Si<sub>1-x</sub>/Si heterojunctionzero-gap directional couplerswitch[刊,中]/赵策洲,刘恩科,李国正（西安交通大学电子工程系。陕西,西安（710049））∥光学学报。一1995,15（2）。—243—247 提出一种简便可行的Ge<sub>x</sub>Si<sub>1-x</sub>异质结无间距定向耦合光开关模型分析方法。该方法采用等离子体色散效应分析了这种光开关的电学调制机理;采用异质结超注原理分析了开关的电学性质;并根据经典单脊形导理论和上述分析,设计了利用双模干涉机制工作的Ge<sub>0.05</sub>Si<sub>0.95</sub>展开更多
文摘运用MEMS工艺制备了不同耦合间距的微环谐振腔,针对耦合间距与耦合系数、谐振深度的影响,进行了理论分析与仿真,并对结构进行耦合实验测试。测试结果表明,随着微环耦合间距的增加,耦合系数减小,谐振深度变浅,这与理论仿真一致。实际计算了相应的耦合效率、3 d B带宽及品质因数,随着耦合间距增大,耦合效率降低,3 d B带宽也随之变窄,微环谐振腔的品质因数逐渐提高。研究结果为微环谐振腔的进一步优化设计及其在相关领域中的研究与应用提供了依据。
基金Supported by the National Natural Science Foundation of China(No. 51079097, 50879057)
文摘Considering the static stability and the change of the displacement volume, including the influences of higher order nonlinear terms and the instantaneous wave surface, the nonlinear coupled heave-pitch motion was established in stochastic waves. The responses of heave-pitch coupling motion for the Truss Spar platform were investigated. It was found that, when the characteristic frequency of a stochastic wave is close to the natural heave frequency, the large amplitude pitch motion is induced under the parametric-forced excitation, which is called the Mathieu instability. It was observed that the heave mode energy is transferred to pitch mode when the heave motion amplitude exceeds a certain extent. In addition, the probability of internal resonant heave-pitch motion is greatly reduced while the characteristic wave frequency is away from the natural heave frequency.
