The multipole mixing ratios have been calculated by a2-ratio method, from levels of 93Mo（p, nγ） reaction. The branching ratios of such γ-transitions are used to calculate the total gamma widths. Besides, the trans...The multipole mixing ratios have been calculated by a2-ratio method, from levels of 93Mo（p, nγ） reaction. The branching ratios of such γ-transitions are used to calculate the total gamma widths. Besides, the transition strengths and probabilities have been calculated for γ-transitions from excited states whose life times have been reported previously. The results are found to be in general in good agreement with the previous results populated from the previous work.展开更多
To evaluate the influence of the ZnO buffer layer and A1 proportion on the properties of ZnO： A1 （AZO）/ZnO bi-layer films, a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporati...To evaluate the influence of the ZnO buffer layer and A1 proportion on the properties of ZnO： A1 （AZO）/ZnO bi-layer films, a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporation. The X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties of the films are investigated. The carrier concentration and Hall mobility both increase with the increase of buffer layer thickness. However, the resistivity reaches the lowest at about 50 nm-thick buffer layer. The lowest resistivity and the maximum Hall mobility are both obtained at 1 wt% Al concentration. But the optical transmittance of all the films is greater than 80% regardless of the buffer layer thickness with A1 concentration lower than 5 wt% in the visible region.展开更多
文摘The multipole mixing ratios have been calculated by a2-ratio method, from levels of 93Mo（p, nγ） reaction. The branching ratios of such γ-transitions are used to calculate the total gamma widths. Besides, the transition strengths and probabilities have been calculated for γ-transitions from excited states whose life times have been reported previously. The results are found to be in general in good agreement with the previous results populated from the previous work.
基金supported by the Foundation of Zhejiang Educational Committee (No.Z201018276)
文摘To evaluate the influence of the ZnO buffer layer and A1 proportion on the properties of ZnO： A1 （AZO）/ZnO bi-layer films, a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporation. The X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties of the films are investigated. The carrier concentration and Hall mobility both increase with the increase of buffer layer thickness. However, the resistivity reaches the lowest at about 50 nm-thick buffer layer. The lowest resistivity and the maximum Hall mobility are both obtained at 1 wt% Al concentration. But the optical transmittance of all the films is greater than 80% regardless of the buffer layer thickness with A1 concentration lower than 5 wt% in the visible region.
