该研究制备高电导、高透明的磷掺杂氢化纳米晶硅氧(nc-Si Ox:H)薄膜,应用于晶硅异质结(SHJ)太阳电池的窗口层以替代传统的氢化非晶硅(a-Si:H)薄膜。与以a-Si:H薄膜为窗口层的电池相比,短路电流密度提高0.5 m A/cm^(2),达到38.5 m A/cm^(...该研究制备高电导、高透明的磷掺杂氢化纳米晶硅氧(nc-Si Ox:H)薄膜,应用于晶硅异质结(SHJ)太阳电池的窗口层以替代传统的氢化非晶硅(a-Si:H)薄膜。与以a-Si:H薄膜为窗口层的电池相比,短路电流密度提高0.5 m A/cm^(2),达到38.5 m A/cm^(2),填充因子为82.7%,光电转换效率为23.5%。实验发现,在nc-Si Ox:H薄膜沉积前对本征非晶硅层表面进行处理,沉积1 nm纳米晶硅(nc-Si:H)种子层,可改善nc-Si Ox:H薄膜的晶化率,降低薄膜中的非晶相含量。与单层nc-Si Ox:H窗口层的电池相比,nc-Si:H/nc-Si Ox:H叠层结构提高电池填充因子,达到83.4%,光电转换效率增加了0.3%,达到23.8%。展开更多
This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force micro...This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), infrared absorption, and ellipsometry. XRD measurements show that this film has a new microstructure, which is different from the films deposited by other methods. The ellipsometry result gives that the optical band gap of the film is about 2.63 eV. In addition, the n-type nc-Si∶H/p-type c-Si heterojunction solar cell, which has open circuit voltage (U oc ) of 558 mV and short circuit current intensity (I sc ) of 29 mA/cm2, was obtained based on the nanocrystalline silicon thin film. Irradiated under AM1.5, 100 mW/cm2 light intensity, the U oc , I sc , and FF can keep stable for 10 h.展开更多
The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logar...The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).展开更多
Some commercially available solar panels with very high efficiencies for terrestrial photovoltaic applications are based on the amorphous silicon on crystalline silicon material system. This type ofheterostructure has...Some commercially available solar panels with very high efficiencies for terrestrial photovoltaic applications are based on the amorphous silicon on crystalline silicon material system. This type ofheterostructure has more than 40 years＇ old history. The early development of the technology and the results, obtained in the last years with this type of solar cell are reviewed. In particular it is demonstrated why the physical understanding of the interface properties and band-structure was important for the development of high efficiency solar cells.展开更多
文摘This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), infrared absorption, and ellipsometry. XRD measurements show that this film has a new microstructure, which is different from the films deposited by other methods. The ellipsometry result gives that the optical band gap of the film is about 2.63 eV. In addition, the n-type nc-Si∶H/p-type c-Si heterojunction solar cell, which has open circuit voltage (U oc ) of 558 mV and short circuit current intensity (I sc ) of 29 mA/cm2, was obtained based on the nanocrystalline silicon thin film. Irradiated under AM1.5, 100 mW/cm2 light intensity, the U oc , I sc , and FF can keep stable for 10 h.
基金Project(11374094)supported by the National Natural Science Foundation of ChinaProject(2013HZX23)supported by Natural Science Foundation of Hunan University of Technology,ChinaProject(2015JJ3060)supported by Natural Science Foundation of Hunan Province of China
文摘The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).
文摘Some commercially available solar panels with very high efficiencies for terrestrial photovoltaic applications are based on the amorphous silicon on crystalline silicon material system. This type ofheterostructure has more than 40 years＇ old history. The early development of the technology and the results, obtained in the last years with this type of solar cell are reviewed. In particular it is demonstrated why the physical understanding of the interface properties and band-structure was important for the development of high efficiency solar cells.
