O73 94064086EL<sub>2</sub>光淬灭过程中光电导增强现象原因新探=Newexplanation to EPC phenomenon in EL<sub>2</sub> photoquenching[刊,中]/徐波,王占国,万寿科,孙虹,张辉（中科院半导体研究所）//半导体...O73 94064086EL<sub>2</sub>光淬灭过程中光电导增强现象原因新探=Newexplanation to EPC phenomenon in EL<sub>2</sub> photoquenching[刊,中]/徐波,王占国,万寿科,孙虹,张辉（中科院半导体研究所）//半导体学报.—1994,15（5）.—322—328用光电导的实验方法对LEC SI-GaAs单晶中EL<sub>2</sub>能级的光淬火过程进行了研究。通过对实验结果的分析,提出了一种解释EL<sub>2</sub>淬灭过程中EPC现象起因模型:光照前因补偿受主而已经电离的一部分,EL<sub>2</sub>展开更多
Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is consideredas the most promising candidate used in deep and super-deep sub-micron region, for it cansuppress hot carrier effect and short channel effect ...Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is consideredas the most promising candidate used in deep and super-deep sub-micron region, for it cansuppress hot carrier effect and short channel effect deeply. Based on the hydrodynamic energytransport model, using two-dimensional device simulator Medici, the relation between structureparameters and hot carrier effect immunity for deep-sub-micron N-channel MOSFET's is studiedand compared with that of counterpart conventional planar device in this paper. The examinedstructure parameters include negative junction depth, concave corner and effective channel length.Simulation results show that grooved gate device can suppress hot carrier effect deeply even indeep sub-micron region. The studies also indicate that hot carrier effect is strongly influencedby the concave corner and channel length for grooved gate device. With the increase of concavecorner, the hot carrier effect in grooved gate MOSFET decreases sharply, and with the reducingof effective channel length, the hot carrier effect becomes large.展开更多
文摘O73 94064086EL<sub>2</sub>光淬灭过程中光电导增强现象原因新探=Newexplanation to EPC phenomenon in EL<sub>2</sub> photoquenching[刊,中]/徐波,王占国,万寿科,孙虹,张辉（中科院半导体研究所）//半导体学报.—1994,15（5）.—322—328用光电导的实验方法对LEC SI-GaAs单晶中EL<sub>2</sub>能级的光淬火过程进行了研究。通过对实验结果的分析,提出了一种解释EL<sub>2</sub>淬灭过程中EPC现象起因模型:光照前因补偿受主而已经电离的一部分,EL<sub>2</sub>
基金Supported by the National Defense Preresearch Fund Program(No.99J8.1.1.DZD132)
文摘Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is consideredas the most promising candidate used in deep and super-deep sub-micron region, for it cansuppress hot carrier effect and short channel effect deeply. Based on the hydrodynamic energytransport model, using two-dimensional device simulator Medici, the relation between structureparameters and hot carrier effect immunity for deep-sub-micron N-channel MOSFET's is studiedand compared with that of counterpart conventional planar device in this paper. The examinedstructure parameters include negative junction depth, concave corner and effective channel length.Simulation results show that grooved gate device can suppress hot carrier effect deeply even indeep sub-micron region. The studies also indicate that hot carrier effect is strongly influencedby the concave corner and channel length for grooved gate device. With the increase of concavecorner, the hot carrier effect in grooved gate MOSFET decreases sharply, and with the reducingof effective channel length, the hot carrier effect becomes large.
