向SIMOX材料的SiO2埋层或Si/SiO2界面注入170 keV F+,进而制成CMOS/SOI材料,采用60Co g 辐射器辐照并测量材料的I-V特性。结果表明:向CMOS/SOI材料埋层注入F+离子,能提高CMOS/SOI材料的抗电离辐照性能。而且,注入F+的剂量为11015cm2时,...向SIMOX材料的SiO2埋层或Si/SiO2界面注入170 keV F+,进而制成CMOS/SOI材料,采用60Co g 辐射器辐照并测量材料的I-V特性。结果表明:向CMOS/SOI材料埋层注入F+离子,能提高CMOS/SOI材料的抗电离辐照性能。而且,注入F+的剂量为11015cm2时,材料的抗辐照能力较强。这对制作应用于电离辐射环境的COMS/SOI器件极其有益。展开更多
Neodymium doping titania was loaded to silicon dioxide to prepare Nd/TiO2-SiO2 by sol-gel method and Nd/TiO2-SiO2 was characterized by X-ray diffractometry （XRD）, scanning electron microscopy （SEM）, Fourier transf...Neodymium doping titania was loaded to silicon dioxide to prepare Nd/TiO2-SiO2 by sol-gel method and Nd/TiO2-SiO2 was characterized by X-ray diffractometry （XRD）, scanning electron microscopy （SEM）, Fourier transform-infrared spectroscopy （FT-IR） and diffuse reflectance spectra （DRS）. Photocatalytic activities of Nd/TiO2-SiO2 with different neodymium contents were evaluated by degradation of methyl orange. The light absorption of Nd/TiO2-SiO2 increased with increasing doping neodymium in a visible light range of 388-619 nm, and Nd doping was in favor of decreasing the recombination of photo-generated electrons with holes. Nd and SiO2 improved the photocatalytic activity of TiO2. The optimal molar fraction of Nd to Ti was 0.1%, and the optimum calcination temperature was 600 ℃. The highest degradation rate of methyl orange was 82.9% after irradiation for 1 h.展开更多
文摘向SIMOX材料的SiO2埋层或Si/SiO2界面注入170 keV F+,进而制成CMOS/SOI材料,采用60Co g 辐射器辐照并测量材料的I-V特性。结果表明:向CMOS/SOI材料埋层注入F+离子,能提高CMOS/SOI材料的抗电离辐照性能。而且,注入F+的剂量为11015cm2时,材料的抗辐照能力较强。这对制作应用于电离辐射环境的COMS/SOI器件极其有益。
基金Project(2009B010100001) supported by the Key Academic Program of the 3rd Phase "211 Project" of South China Agricultural University, ChinaProject(2007B030103019) supported by Guangdong Science and Technology Development Foundation, China
文摘Neodymium doping titania was loaded to silicon dioxide to prepare Nd/TiO2-SiO2 by sol-gel method and Nd/TiO2-SiO2 was characterized by X-ray diffractometry （XRD）, scanning electron microscopy （SEM）, Fourier transform-infrared spectroscopy （FT-IR） and diffuse reflectance spectra （DRS）. Photocatalytic activities of Nd/TiO2-SiO2 with different neodymium contents were evaluated by degradation of methyl orange. The light absorption of Nd/TiO2-SiO2 increased with increasing doping neodymium in a visible light range of 388-619 nm, and Nd doping was in favor of decreasing the recombination of photo-generated electrons with holes. Nd and SiO2 improved the photocatalytic activity of TiO2. The optimal molar fraction of Nd to Ti was 0.1%, and the optimum calcination temperature was 600 ℃. The highest degradation rate of methyl orange was 82.9% after irradiation for 1 h.
