A novel high-order curvature compensation negative voltage bandgap reference （NBGR） based on a novel multilevel compensation technique is introduced. Employing an exponential curvature compensation （ECC） term with...A novel high-order curvature compensation negative voltage bandgap reference （NBGR） based on a novel multilevel compensation technique is introduced. Employing an exponential curvature compensation （ECC） term with many high order terms in itself, in a lower temperature range （TR） and a multilevel curvature compen- sation （MLCC） term in a higher TR, a flattened and better effect of curvature compensation over the TR of 165℃ （--40 to 125 ℃） is realised. The MLCC circuit adds two convex curves by using two sub-threshold operated NMOS. The proposed NBGR implemented in the Central Semiconductor Manufacturing Corporation （CSMC） 0.5 #m BCD technology demonstrates an accurate voltage of-1.183 V with a temperature coefficient （TC） as low as 2.45 ppm/℃over the TR of 165℃ at a -5.0 V power supply; the line regulation is 3 mV/V from a -5 to -2 V supply voltage. The active area of the presented NBGR is 370×180 μm2.展开更多
MoS2/Zr composite films were deposited on the cemented carbide YT14 （WC＋14%TiC＋6%Co） by medium-frequency magnetron sputtered and coupled with multi-arc ion plated techniques.The influence of negative bias voltage ...MoS2/Zr composite films were deposited on the cemented carbide YT14 （WC＋14%TiC＋6%Co） by medium-frequency magnetron sputtered and coupled with multi-arc ion plated techniques.The influence of negative bias voltage on the composite film properties,including adhesion strength,micro-hardness,thickness and tribological properties were investigated.The results showed that proper negative bias voltage could significantly improve the mechanical and tribological properties of composite films.The effects of negative bias voltage on film properties were also put forward.The optimal negative bias voltage was -200 V under this experiment conditions.The obtained composite films were dense,the adhesion strength was about 60 N,the thickness was about 2.4 μm,and the micro-hardness was about 9.0 GPa.The friction coefficient and wear rate was 0.12 and 2.1×10-7 cm3/N·m respectively after 60 m sliding operation against hardened steel under a load of 20 N and a sliding speed of 200 rev·min-1.展开更多
Waveform control method was commonly adopted to reduce the spatter of CO2 arc welding and improve the weld formation. It certainly would reduce the self-regulation ability of arc due to the adoption of segmented const...Waveform control method was commonly adopted to reduce the spatter of CO2 arc welding and improve the weld formation. It certainly would reduce the self-regulation ability of arc due to the adoption of segmented constant current control which especially led to arc＂ blowout with the abrupt change oat＂ arc＂ length or downward welding. Therefore alterative wire-feed system based on arc voltage negative feedback was put forward to improve the .stability of arc＂ length in this paper. Double closed-loop and double fuzzy P1 regulation were adopted in this system. Fuzzy control of induced voltage was adopted in the inner-loop which improved the stability and fast response of wire-feed system. Fuzz）＂ control of arc＂ voltage negative feedback was used in the outer-loop whose output .served as the input of negative feedback regulation of inner-loop induced voltage. This method could remain arc＂ length and weld penetration unchan, ged on the basils of reducing spatter and improving formation and it was proved by downward welding tests.展开更多
A fully differential R-MOSFET-C fourth-order Bessel active lowpass filter employing fully differential operational amplifier,passive resistors,and current-steering MOS transistors as a variable resistor is proposed.T...A fully differential R-MOSFET-C fourth-order Bessel active lowpass filter employing fully differential operational amplifier,passive resistors,and current-steering MOS transistors as a variable resistor is proposed.This proposed implementation relies on the tunability of current-steering MOS transistors operating in the triode region counteracting the concert deviation of resistor in the integrated circuit manufacturing technology in orde r that the group delay of Bessel active filter could be designed accurately.The amplifier is not only with voltage common-mode negative feedback,but also with current common-mode negative feedback,which will benefit for the stability of its D C operating point.0.75μs group delay fourth-order Bessel lowpass filter,whic h is synthesized according to passive doubly terminated RLC prototype lowpass filter,demonstrates better than -65dB THD using 100kHz,2.5V pp signal in Taiwan UMC 2P2M(2-poly,2-metal)5.0V,0.5μm CMOS technology.展开更多
NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni90Cu10 target. A DC bias voltage of 0, 60, 110 or 140V was applied to the ...NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni90Cu10 target. A DC bias voltage of 0, 60, 110 or 140V was applied to the substrate during deposition. The adhesion of the film to the substrate was studied using a scratch test as a function of . The application of is very effective in increasing the adhesion of the film to the substrate. In conclusion, the adhesion increases with cleaning the substrate surface by sputtering off impurity admolecules during the film initial formation due to the energetic Ar ion particle bombardment.展开更多
The direct current-direct current （DC-DC） converter is designed for 1 T static random access memory （SRAM） used in display driver integrated circuits （ICs）, which consists of positive word-line voltage （VpwL）,...The direct current-direct current （DC-DC） converter is designed for 1 T static random access memory （SRAM） used in display driver integrated circuits （ICs）, which consists of positive word-line voltage （VpwL）, negative word-line voltage （VinyL） and half-VDD voltage （VHDo） generator. To generate a process voltage temperature （PVT）-insensitive VpWL and VNWL, a set of circuits were proposed to generate reference voltages using bandgap reference current generators for respective voltage level detectors. Also, a VOWL regulator and a VNWL charge pump were proposed for a small-area and low-power design. The proposed VpwL regulator can provide a large driving current with a small area since it regulates an input voltage （VCI） from 2.5 to 3.3 V. The VmvL charge pump can be implemented as a high-efficiency circuit with a small area and low power since it can transfer pumped charges to VNWL node entirely. The DC-DC converter for 1 T SRAM were designed with 0.11 μm mixed signal process and operated well with satisfactory measurement results.展开更多
A new 11 T SRAM cell with write-assist is proposed to improve operation at low supply voltage. In this technique, a negative bit-line voltage is applied to one of the write bit-lines, while a boosted voltage is applie...A new 11 T SRAM cell with write-assist is proposed to improve operation at low supply voltage. In this technique, a negative bit-line voltage is applied to one of the write bit-lines, while a boosted voltage is applied to the other write bit-line where transmission gate access is used in proposed 11 T cell. Supply voltage to one of the inverters is interrupted to weaken the feedback. Improved write feature is attributed to strengthened write access devices and weakened feedback loop of cell at the same time. Amount of boosting required for write performance improvement is also reduced due to feedback weakening, solving the persistent problem of half-selected cells and reliability reduction of access devices with the other suggested boosted and negative bit-line techniques. The proposed design improves write time by 79%, 63% and slower by 52% with respect to LP 10 T, WRE 8 T and 6 T cells respectively. It is found that write margin for the proposed cell is improved by about 4×, 2.4× and 5.37× compared to WRE8 T, LP10 T and 6 T respectively. The proposed cell with boosted negative bit line（BNBL） provides47%, 31%, and 68.4% improvement in write margin with respect to no write-assist, negative bit line（NBL） and boosted bit line（BBL） write-assist respectively. Also, new sensing circuit with replica bit-line is proposed to give a more precise timing of applying boosted voltages for improved results. All simulations are done on TSMC 45 nm CMOS technology.展开更多
基金Project supported by the Fund of Liaoning Province Education Department(No.L2013045)
文摘A novel high-order curvature compensation negative voltage bandgap reference （NBGR） based on a novel multilevel compensation technique is introduced. Employing an exponential curvature compensation （ECC） term with many high order terms in itself, in a lower temperature range （TR） and a multilevel curvature compen- sation （MLCC） term in a higher TR, a flattened and better effect of curvature compensation over the TR of 165℃ （--40 to 125 ℃） is realised. The MLCC circuit adds two convex curves by using two sub-threshold operated NMOS. The proposed NBGR implemented in the Central Semiconductor Manufacturing Corporation （CSMC） 0.5 #m BCD technology demonstrates an accurate voltage of-1.183 V with a temperature coefficient （TC） as low as 2.45 ppm/℃over the TR of 165℃ at a -5.0 V power supply; the line regulation is 3 mV/V from a -5 to -2 V supply voltage. The active area of the presented NBGR is 370×180 μm2.
基金Funded by the National Natural Science Foundation of China (No.51075237)the National Basic Research Program of China (No.2009CB724402)+3 种基金the Taishan Scholar Program of Shandong Provincethe Outstanding Young Scholar Science Foundation of Shandong (No.JQ200917)the National Natural Science Foundation of Shandong (No.ZR2010EZ002)National High Technology Research and Development Program (No.2009AA044303)
文摘MoS2/Zr composite films were deposited on the cemented carbide YT14 （WC＋14%TiC＋6%Co） by medium-frequency magnetron sputtered and coupled with multi-arc ion plated techniques.The influence of negative bias voltage on the composite film properties,including adhesion strength,micro-hardness,thickness and tribological properties were investigated.The results showed that proper negative bias voltage could significantly improve the mechanical and tribological properties of composite films.The effects of negative bias voltage on film properties were also put forward.The optimal negative bias voltage was -200 V under this experiment conditions.The obtained composite films were dense,the adhesion strength was about 60 N,the thickness was about 2.4 μm,and the micro-hardness was about 9.0 GPa.The friction coefficient and wear rate was 0.12 and 2.1×10-7 cm3/N·m respectively after 60 m sliding operation against hardened steel under a load of 20 N and a sliding speed of 200 rev·min-1.
文摘Waveform control method was commonly adopted to reduce the spatter of CO2 arc welding and improve the weld formation. It certainly would reduce the self-regulation ability of arc due to the adoption of segmented constant current control which especially led to arc＂ blowout with the abrupt change oat＂ arc＂ length or downward welding. Therefore alterative wire-feed system based on arc voltage negative feedback was put forward to improve the .stability of arc＂ length in this paper. Double closed-loop and double fuzzy P1 regulation were adopted in this system. Fuzzy control of induced voltage was adopted in the inner-loop which improved the stability and fast response of wire-feed system. Fuzz）＂ control of arc＂ voltage negative feedback was used in the outer-loop whose output .served as the input of negative feedback regulation of inner-loop induced voltage. This method could remain arc＂ length and weld penetration unchan, ged on the basils of reducing spatter and improving formation and it was proved by downward welding tests.
文摘A fully differential R-MOSFET-C fourth-order Bessel active lowpass filter employing fully differential operational amplifier,passive resistors,and current-steering MOS transistors as a variable resistor is proposed.This proposed implementation relies on the tunability of current-steering MOS transistors operating in the triode region counteracting the concert deviation of resistor in the integrated circuit manufacturing technology in orde r that the group delay of Bessel active filter could be designed accurately.The amplifier is not only with voltage common-mode negative feedback,but also with current common-mode negative feedback,which will benefit for the stability of its D C operating point.0.75μs group delay fourth-order Bessel lowpass filter,whic h is synthesized according to passive doubly terminated RLC prototype lowpass filter,demonstrates better than -65dB THD using 100kHz,2.5V pp signal in Taiwan UMC 2P2M(2-poly,2-metal)5.0V,0.5μm CMOS technology.
文摘NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni90Cu10 target. A DC bias voltage of 0, 60, 110 or 140V was applied to the substrate during deposition. The adhesion of the film to the substrate was studied using a scratch test as a function of . The application of is very effective in increasing the adhesion of the film to the substrate. In conclusion, the adhesion increases with cleaning the substrate surface by sputtering off impurity admolecules during the film initial formation due to the energetic Ar ion particle bombardment.
基金supported by the Second Stage of Brain Korea 21 Projectsfinancially supported by Changwon National University in 2011-2013
文摘The direct current-direct current （DC-DC） converter is designed for 1 T static random access memory （SRAM） used in display driver integrated circuits （ICs）, which consists of positive word-line voltage （VpwL）, negative word-line voltage （VinyL） and half-VDD voltage （VHDo） generator. To generate a process voltage temperature （PVT）-insensitive VpWL and VNWL, a set of circuits were proposed to generate reference voltages using bandgap reference current generators for respective voltage level detectors. Also, a VOWL regulator and a VNWL charge pump were proposed for a small-area and low-power design. The proposed VpwL regulator can provide a large driving current with a small area since it regulates an input voltage （VCI） from 2.5 to 3.3 V. The VmvL charge pump can be implemented as a high-efficiency circuit with a small area and low power since it can transfer pumped charges to VNWL node entirely. The DC-DC converter for 1 T SRAM were designed with 0.11 μm mixed signal process and operated well with satisfactory measurement results.
文摘A new 11 T SRAM cell with write-assist is proposed to improve operation at low supply voltage. In this technique, a negative bit-line voltage is applied to one of the write bit-lines, while a boosted voltage is applied to the other write bit-line where transmission gate access is used in proposed 11 T cell. Supply voltage to one of the inverters is interrupted to weaken the feedback. Improved write feature is attributed to strengthened write access devices and weakened feedback loop of cell at the same time. Amount of boosting required for write performance improvement is also reduced due to feedback weakening, solving the persistent problem of half-selected cells and reliability reduction of access devices with the other suggested boosted and negative bit-line techniques. The proposed design improves write time by 79%, 63% and slower by 52% with respect to LP 10 T, WRE 8 T and 6 T cells respectively. It is found that write margin for the proposed cell is improved by about 4×, 2.4× and 5.37× compared to WRE8 T, LP10 T and 6 T respectively. The proposed cell with boosted negative bit line（BNBL） provides47%, 31%, and 68.4% improvement in write margin with respect to no write-assist, negative bit line（NBL） and boosted bit line（BBL） write-assist respectively. Also, new sensing circuit with replica bit-line is proposed to give a more precise timing of applying boosted voltages for improved results. All simulations are done on TSMC 45 nm CMOS technology.
