Over the past decades, topological interface states have attracted significant attention in classical wave systems. Generally, research on the topological interface states of elastic waves is conducted in the lattices...Over the past decades, topological interface states have attracted significant attention in classical wave systems. Generally, research on the topological interface states of elastic waves is conducted in the lattices with symmetric elements. This paper proposes composite lattices with/without symmetric elements, and demonstrates the realization of tunable topological interface states of elastic waves via parametric systems.To quantize the topological characteristics of the bands, a modified Zak phase is defined to calculate the topological invariant by the eigenstates for the lattices with/without symmetric elements. The numerical results show that the tunable frequencies of topological interface states can be realized in composite lattices with/without symmetric elements through the modulation of the parametric excitation frequency. The tunable topological interface states can be introduced into the vibration energy harvesting to design efficient and steady energy harvesting systems.展开更多
The low voltage substrate current （Ib） has been studied based on generation kinetics and used as a monitor of interface states （Nit） generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is f...The low voltage substrate current （Ib） has been studied based on generation kinetics and used as a monitor of interface states （Nit） generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage Ib is formed by electrons tunnelling through interface states, and the variations of Ib（△Ib） are proportional to variations of Nit （△Nit）. The Nit energy distributions were determined by differentiating Nit（Vg）. The results have been compared with that measured by using gate diode technique.展开更多
P-type silicon heterojunction（SHJ） solar cells with a-SiC：H（n） emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on...P-type silicon heterojunction（SHJ） solar cells with a-SiC：H（n） emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on the performance of a-SiC：H（n）/c-Si（p） SHJ solar cells was investigated systematically. It is shown that the open circuit voltage（Voc） and fill factor（F F） are very sensitive to these parameters. In addition, by analyzing equilibrium energy band diagram and electric field distribution, the influence mechanisms that interface states, conduction band offset, and front contact impact on the carrier transport, interface recombination and cell performance were studied in detail. Finally, the optimum parameters for the a-SiC：H（n）/c-Si（p） SHJ solar cells were provided. By employing these optimum parameters, the efficiency of SHJ solar cell based on p-type c-Si was significantly improved.展开更多
We experimentally evaluated the interface state density of GaN MIS-HEMTs during time-dependent dielectric breakdown(TDDB).Under a high forward gate bias stress,newly increased traps generate both at the SiNx/AlGaN int...We experimentally evaluated the interface state density of GaN MIS-HEMTs during time-dependent dielectric breakdown(TDDB).Under a high forward gate bias stress,newly increased traps generate both at the SiNx/AlGaN interface and the SiNx bulk,resulting in the voltage shift and the increase of the voltage hysteresis.When prolonging the stress duration,the defects density generated in the SiNx dielectric becomes dominating,which drastically increases the gate leakage current and causes the catastrophic failure.After recovery by UV light illumination,the negative shift in threshold voltage(compared with the fresh one)confirms the accumulation of positive charge at the SiNx/AlGaN interface and/or in SiNx bulk,which is possibly ascribed to the broken bonds after long-term stress.These results experimentally confirm the role of defects in the TDDB of GaN-based MIS-HEMTs.展开更多
The frequency dependence of admittance measurements （capacitance–voltage （C–V ） and conductance–voltage （G/ω–V ）） of Au/SnO2 /n-Si （MOS） capacitors was investigated by taking into account the effects of t...The frequency dependence of admittance measurements （capacitance–voltage （C–V ） and conductance–voltage （G/ω–V ）） of Au/SnO2 /n-Si （MOS） capacitors was investigated by taking into account the effects of the interface states （N ss ） and series resistance （Rs ） at room temperature. Admittance measurements were carried out in frequency and bias voltage ranges of 1 kHz–1 MHz and （ 5V）–（＋9V）, respectively. The values of N ss and R s were determined by using a conductance method and estimating from the admittance measurements of the MOS capacitors. At low frequencies, the interface states can follow the AC signal and yield excess capacitance and conductance. In addition, the parallel conductance （G p /ω） versus log（f） curves at various voltages include a peak due to the presence of interface states. It is observed that the N ss and their time constant （τ） range from 1.23 ×10 12 eV-1 ·cm-2 to 1.47 ×10 12 eV-1 ·cm-2 and from 7.29 ×10-5 s to 1.81 ×10-5s, respectively.展开更多
Based on first-principles calculations,the bias-induced evolutions of hybrid interface states inπ-conjugated tricene and in insulating octane magnetic molecular junctions are investigated.Obvious bias-induced splitti...Based on first-principles calculations,the bias-induced evolutions of hybrid interface states inπ-conjugated tricene and in insulating octane magnetic molecular junctions are investigated.Obvious bias-induced splitting and energy shift of the spin-resolved hybrid interface states are observed in the two junctions.The recombination of the shifted hybrid interface states from different interfaces makes the spin polarization around the Fermi energy strongly bias-dependent.The transport calculations demonstrate that in theπ-conjugated tricene junction,the bias-dependent hybrid interface states work efficiently for large current,current spin polarization,and distinct tunneling magnetoresistance.But in the insulating octane junction,the spin-dependent transport via the hybrid interface states is inhibited,which is only slightly disturbed by the bias.This work reveals the phenomenon of bias-induced reconstruction of hybrid interface states in molecular spinterface devices,and the underlying role of conjugated molecular orbitals in the transport ability of hybrid interface states.展开更多
The dual-channel nearly perfect absorption is realized by the coupled modes of topological interface states(TIS) in the near-infrared range. An all-dielectric layered heterostructure composed of photonic crystals(Ph C...The dual-channel nearly perfect absorption is realized by the coupled modes of topological interface states(TIS) in the near-infrared range. An all-dielectric layered heterostructure composed of photonic crystals(Ph C)/graphene/Ph C/graphene/Ph C on Ga As substrate is proposed to excite the TIS at the interface of adjacent Ph C with opposite topological properties. Based on finite element method(FEM) and transfer matrix method(TMM), the dualchannel absorption can be modulated by the periodic number of middle Ph C, Fermi level of graphene, and angle of incident light(TE and TM polarizations). Especially, by fine-tuning the Fermi level of graphene around 0.4 e V, the absorption of both channels can be switched rapidly and synchronously. This design is hopefully integrated into silicon-based chips to control light.展开更多
The surface and interface of heterojunction (HJ) formed with organic semiconductor (3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA)) and inorganic semiconductor p-Si were measured and analyzed by X-ray photoelect...The surface and interface of heterojunction (HJ) formed with organic semiconductor (3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA)) and inorganic semiconductor p-Si were measured and analyzed by X-ray photoelectron spectroscopy (XPS).The results indicate that, in PTCDA molecule,the binding energy ( E b) of C is 284.6 eV and 288.3 eV, corresponding to C of the perylene and C of the anhydride, respectively, and the binding energy of O is 531.3 eV and 531.1 eV, corresponding to C of C=O in the anhydrides and C of C-O-C, respectively. Moreover, PTCDA lost its anhydrides and only its perylenes were left in the HJ interface.展开更多
Topological interface state(TIS)of elastic wave has attracted significant research interest due to its potential prospects in strengthening acoustic energy and enhancing the signal accuracy of damage identification an...Topological interface state(TIS)of elastic wave has attracted significant research interest due to its potential prospects in strengthening acoustic energy and enhancing the signal accuracy of damage identification and quantification.However,previous implementations on the interface modes of surface waves are limited to the non-adjustable frequency band and unalterable mode width.Here,we demonstrate the tunable TIS and topological resonance state(TRS)of Rayleigh wave by using a shape memory alloy(SMA)stubbed semi-infinite one-dimensional(1D)solid phononic crystals(PnCs),which simultaneously possesses the adjustable mode width.The mechanism of tunability stems from the phase transformation of the SMA between the martensite at low temperature and the austenite at high temperature.The tunable TIS of Rayleigh wave is realized by combining two bandgap-opened PnCs with different Zak phases.The TRS with adjustable mode width is achieved in the heterostructures by adding PnCs with Dirac point to the middle of two bandgap-opened PnCs with different Zak phases,which exhibits the extraordinary robustness in contrast to the ordinary Fabry–Perot resonance state.This research provides new possibilities for the highly adjustable Rayleigh wave manipulation and find promising applications such as tunable energy harvesters,wide-mode filters,and high-sensitivity Rayleigh wave detectors.展开更多
Intrinsic hydrogenated amorphous silicon（a-Si：H） film is deposited on n-type crystalline silicon（c-Si） wafer by hotwire chemical vapor deposition（HWCVD） to analyze the amorphous/crystalline heterointerface pass...Intrinsic hydrogenated amorphous silicon（a-Si：H） film is deposited on n-type crystalline silicon（c-Si） wafer by hotwire chemical vapor deposition（HWCVD） to analyze the amorphous/crystalline heterointerface passivation properties.The minority carrier lifetime of symmetric heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system,and a simple method of determining the interface state density（D_（it）） from lifetime measurement is proposed.The interface state density（D_（it）） measurement is also performed by using deep-level transient spectroscopy（DLTS） to prove the validity of the simple method.The microstructures and hydrogen bonding configurations of a-Si：H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry（SE） and Fourier transform infrared spectroscopy（FTIR） respectively.Lower values of interface state density（D_（it）） are obtained by using a-Si：H film with more uniform,compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD.展开更多
CMOS image sensors produced by the existing CMOS manufacturing process usually have difficulty achieving complete charge transfer owing to the introduction of potential barriers or Si/SiO_(2)interface state traps in t...CMOS image sensors produced by the existing CMOS manufacturing process usually have difficulty achieving complete charge transfer owing to the introduction of potential barriers or Si/SiO_(2)interface state traps in the charge transfer path,which reduces the charge transfer efficiency and image quality.Until now,scholars have only considered mechanisms that limit charge transfer from the perspectives of potential barriers and spill back effect under high illumination condition.However,the existing models have thus far ignored the charge transfer limitation due to Si/SiO_(2)interface state traps in the transfer gate channel,particularly under low illumination.Therefore,this paper proposes,for the first time,an analytical model for quantifying the incomplete charge transfer caused by Si/SiO_(2)interface state traps in the transfer gate channel under low illumination.This model can predict the variation rules of the number of untransferred charges and charge transfer efficiency when the trap energy level follows Gaussian distribution,exponential distribution and measured distribution.The model was verified with technology computer-aided design simulations,and the results showed that the simulation results exhibit the consistency with the proposed model.展开更多
Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/A1GaN/GaN metal-oxide-semiconductor （MOS） structures. Two types of device structures, namely, the recessed ga...Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/A1GaN/GaN metal-oxide-semiconductor （MOS） structures. Two types of device structures, namely, the recessed gate structure （RGS） and the normal gate structure （NGS）, are studied in the experiment. Interface trap parameters includ-ing trap density Dit, trap time constant ιit, and trap state energy ET in both devices have been determined. Furthermore, the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching （RIE）.展开更多
Compared with periodic structures,quasi-periodic structures have superior band gap properties and topological interface states.In this paper,a one-dimensional quasi-periodic Fibonacci water wave metamaterial model tha...Compared with periodic structures,quasi-periodic structures have superior band gap properties and topological interface states.In this paper,a one-dimensional quasi-periodic Fibonacci water wave metamaterial model that can be used to apply quasi-periodic structures to shallow-water wave systems is presented.The fluctuation characteristics of periodic and quasi-periodic structures are examined using finite element numerical calculations based on the shallow-water wave equation.The research results show that the band characteristics of quasi-periodic structures are complex,enabling flexible control of the propagation of shallow-water waves.Furthermore,the mirror-symmetrical design of Fibonacci quasi-periodic water wave metamaterials was created to engineer the topological interface states in shallow-water wave systems,ultimately achieving successful localization of wave energy.This research will greatly enrich our understanding of topology,expand the potential applications of quasi-periodic structures,and provide new insights for manipulating water waves and harvesting energy.展开更多
Highly stable ZnO varistor ceramics with steadily decreasing power loss have been put into applications in electrical and electronic systems for overvoltage protections, even with the absence of general understandings...Highly stable ZnO varistor ceramics with steadily decreasing power loss have been put into applications in electrical and electronic systems for overvoltage protections, even with the absence of general understandings on their aging behaviors. In this paper, we investigated their aging nature via conducting comparative direct current (DC) aging experiments both in air and in nitrogen, during which variations of electrical properties and interface properties were measured and analyzed. Notably, continuously increasing power loss with severe electrical degradation was observed for the sample aged in nitrogen. The power loss transition was discovered to be closely related to the consumption of oxygen adsorption at the grain boundary (GB), which could, however, remain constant for the sample aged in air. The interface density of states (DOS) Ni, which is crucial for pinning the potential barrier, was proved to decrease in nitrogen, but keep stable in air. Therefore, it is concluded that the oxygen adsorption at the GB is significant for the stability of interface states, which further correlates to the long-term stability of modern stable ZnO varistor ceramics.展开更多
Significantly enhanced varistor properties via tailoring interface states were obtained in Ca_(1-2x/3)Y_(x)Cu_(3)Ti_(4)O_(12)-SrCu_(3)Ti_(4)O_(12) composite ceramics.The breakdown field was improved to 35.8 kV cm^(-1)...Significantly enhanced varistor properties via tailoring interface states were obtained in Ca_(1-2x/3)Y_(x)Cu_(3)Ti_(4)O_(12)-SrCu_(3)Ti_(4)O_(12) composite ceramics.The breakdown field was improved to 35.8 kV cm^(-1) and the nonlinear coefficient in 0.1-1 mA cm^(-2) was enhanced to 14.6 for Ca_(0.67)Y_(0.5)Cu_(3)Ti_(4)O_(12)-SrCu_(3)Ti_(4)O_(12).Noticeably,the withstand voltage of single grain boundary reached up to 24 V while the reported ones were constant to about 3 V.Greatly improved properties were attributed to the formation of superior grain boundary rather than the reduced grain size.Surprisingly,with distinct discrepancy of nonlinear performance in the composites,the resistance and activation energy of grain boundary exhibited little differences.Based on the double Schottky barrier at grain boundary and the field-assisted thermal emission model,it was found that the excellent electrical nonlinearity arose from the formation of deeper and broader interface states at grain boundary.In this case,interface states were not easily entirely filled and the barrier could maintain its height under applied voltage.This work provides a novel routine for enhancing the varistor properties of CaCu_(3)Ti_(4)O_(12) based ceramics by manipulating interface states at grain boundary.展开更多
Stimulated photoluminescence （PL） emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emi...Stimulated photoluminescence （PL） emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emission, which can be demonstrated by its threshold behaviour and linear transition of emission intensity as a function of pump power. The oxide structure is formed by laser irradiation on silicon and its annealing treatment. A model for explaining the stimulated emission is proposed, in which the trap states of the interface between an oxide of silicon and porous nanocrystal play an important role.展开更多
In this study, we investigate the acoustic topological insulator or topological metastructure, where an acoustic wave can exist only in an edge or interface state instead of propagating in bulk. Breaking the structura...In this study, we investigate the acoustic topological insulator or topological metastructure, where an acoustic wave can exist only in an edge or interface state instead of propagating in bulk. Breaking the structural symmetry enables the opening of the Dirac cone in the band structure and the generation of a new band gap, wherein a topological edge or interface state emerges.Further, we systematically analyze two types of topological states that stem from the acoustic valley Hall effect mechanism;one type is confined to the boundary, whereas the other type can be observed at the interface between two topologically different structures. Results denote that the selection of different boundaries along with appropriately designed interfaces provides the acoustic waves in the band gap range with abilities of one-way propagation, dual-channel propagation, immunity from backscattering at sharp corners, and/or transition between propagation at interfaces and boundaries. Furthermore, we show that the acoustic wave propagation paths can be tailored in diverse and arbitrary ways by combing the two aforementioned types of topological states.展开更多
Interface states are widely applied in waveguide devices.However,previous studies failed to achieve photonic and phononic interface states independent of each other in the same crystal structure depending on the behav...Interface states are widely applied in waveguide devices.However,previous studies failed to achieve photonic and phononic interface states independent of each other in the same crystal structure depending on the behavior of the crystal structure,i.e.,photonic or phononic crystals,making the function of interface states single.In this study,straight-line and circular photonic and phononic interface states were realized independently in sunflower-type crystals.In addition,with a defect and a metal barrier,interface states could remain almost undamaged.The results have the potential to achieve multifunction devices and reduce the cost of engineering applications.展开更多
A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation i...A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiO_2 interface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy.展开更多
The surface and interface electronic states of tris (8 hydroxyquinoline) aluminum (Alq 3)/indium tin oxide (ITO) were measured and analyzed by X ray photoelectron spectroscopy (XPS). The results indicated that, in Alq...The surface and interface electronic states of tris (8 hydroxyquinoline) aluminum (Alq 3)/indium tin oxide (ITO) were measured and analyzed by X ray photoelectron spectroscopy (XPS). The results indicated that, in Alq 3 molecule, the binding energy ( E b) of Al atoms is 70.7 eV and 75.1 eV, corresponding to Al(O) and Al(Ⅲ), respectively; The binding energy of C is 285.8 eV, 286.3 eV, and 286.8 eV, corresponding to C of C-C group, C-O, and C-N bond, respectively. N is the main peak locating at 401.0 eV, corresponding to N atom of C-N=C. O atoms mainly bond to H atom, with the binding energy of 533.2 eV. As the sputtering time of Ar + ion beam increases, Al 2p , C 1s , N 1s , O 1s , In 3d 5/2 and Sn 3d 5/2 peaks slightly shift towards lower binding energy, and Al 2p , C 1s and N 1s peaks get weaker, which contributes to diffusing the oxygen, indium and tin in ITO into Alq 3 layer.展开更多
基金Project supported by the National Natural Science Foundation of China (Nos. 62188101 and 11902097)。
文摘Over the past decades, topological interface states have attracted significant attention in classical wave systems. Generally, research on the topological interface states of elastic waves is conducted in the lattices with symmetric elements. This paper proposes composite lattices with/without symmetric elements, and demonstrates the realization of tunable topological interface states of elastic waves via parametric systems.To quantize the topological characteristics of the bands, a modified Zak phase is defined to calculate the topological invariant by the eigenstates for the lattices with/without symmetric elements. The numerical results show that the tunable frequencies of topological interface states can be realized in composite lattices with/without symmetric elements through the modulation of the parametric excitation frequency. The tunable topological interface states can be introduced into the vibration energy harvesting to design efficient and steady energy harvesting systems.
文摘The low voltage substrate current （Ib） has been studied based on generation kinetics and used as a monitor of interface states （Nit） generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage Ib is formed by electrons tunnelling through interface states, and the variations of Ib（△Ib） are proportional to variations of Nit （△Nit）. The Nit energy distributions were determined by differentiating Nit（Vg）. The results have been compared with that measured by using gate diode technique.
基金supported by the National High Technology Research and Development Program of China(Grant No.2012AA050301)Scientific Research of Hebei Education Department,China(Grant No.QN2017135)
文摘P-type silicon heterojunction（SHJ） solar cells with a-SiC：H（n） emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on the performance of a-SiC：H（n）/c-Si（p） SHJ solar cells was investigated systematically. It is shown that the open circuit voltage（Voc） and fill factor（F F） are very sensitive to these parameters. In addition, by analyzing equilibrium energy band diagram and electric field distribution, the influence mechanisms that interface states, conduction band offset, and front contact impact on the carrier transport, interface recombination and cell performance were studied in detail. Finally, the optimum parameters for the a-SiC：H（n）/c-Si（p） SHJ solar cells were provided. By employing these optimum parameters, the efficiency of SHJ solar cell based on p-type c-Si was significantly improved.
基金National Key Research and Development Program of China(Grant No.2017YFB0402800)the Key Research and Development Program of Guangdong Province,China(Grant Nos.2019B010128002 and 2020B010173001)+2 种基金the National Natural Science Foundation of China(Grant Nos.U1601210 and 61904207)the Natural Science Foundation of Guangdong Province of China(Grant No.2015A030312011)the China Postdoctoral Science Foundation(Grant No.2019M663233).
文摘We experimentally evaluated the interface state density of GaN MIS-HEMTs during time-dependent dielectric breakdown(TDDB).Under a high forward gate bias stress,newly increased traps generate both at the SiNx/AlGaN interface and the SiNx bulk,resulting in the voltage shift and the increase of the voltage hysteresis.When prolonging the stress duration,the defects density generated in the SiNx dielectric becomes dominating,which drastically increases the gate leakage current and causes the catastrophic failure.After recovery by UV light illumination,the negative shift in threshold voltage(compared with the fresh one)confirms the accumulation of positive charge at the SiNx/AlGaN interface and/or in SiNx bulk,which is possibly ascribed to the broken bonds after long-term stress.These results experimentally confirm the role of defects in the TDDB of GaN-based MIS-HEMTs.
文摘The frequency dependence of admittance measurements （capacitance–voltage （C–V ） and conductance–voltage （G/ω–V ）） of Au/SnO2 /n-Si （MOS） capacitors was investigated by taking into account the effects of the interface states （N ss ） and series resistance （Rs ） at room temperature. Admittance measurements were carried out in frequency and bias voltage ranges of 1 kHz–1 MHz and （ 5V）–（＋9V）, respectively. The values of N ss and R s were determined by using a conductance method and estimating from the admittance measurements of the MOS capacitors. At low frequencies, the interface states can follow the AC signal and yield excess capacitance and conductance. In addition, the parallel conductance （G p /ω） versus log（f） curves at various voltages include a peak due to the presence of interface states. It is observed that the N ss and their time constant （τ） range from 1.23 ×10 12 eV-1 ·cm-2 to 1.47 ×10 12 eV-1 ·cm-2 and from 7.29 ×10-5 s to 1.81 ×10-5s, respectively.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11974215,21933002,and 11874242)the Shandong Provincial Natural Science Foundation,China(Grant No.ZR2019MA043)。
文摘Based on first-principles calculations,the bias-induced evolutions of hybrid interface states inπ-conjugated tricene and in insulating octane magnetic molecular junctions are investigated.Obvious bias-induced splitting and energy shift of the spin-resolved hybrid interface states are observed in the two junctions.The recombination of the shifted hybrid interface states from different interfaces makes the spin polarization around the Fermi energy strongly bias-dependent.The transport calculations demonstrate that in theπ-conjugated tricene junction,the bias-dependent hybrid interface states work efficiently for large current,current spin polarization,and distinct tunneling magnetoresistance.But in the insulating octane junction,the spin-dependent transport via the hybrid interface states is inhibited,which is only slightly disturbed by the bias.This work reveals the phenomenon of bias-induced reconstruction of hybrid interface states in molecular spinterface devices,and the underlying role of conjugated molecular orbitals in the transport ability of hybrid interface states.
基金supported by Postgraduate Research&Practice Innovation Program of Jiangsu Province,China(Grant No.KYCX201929)。
文摘The dual-channel nearly perfect absorption is realized by the coupled modes of topological interface states(TIS) in the near-infrared range. An all-dielectric layered heterostructure composed of photonic crystals(Ph C)/graphene/Ph C/graphene/Ph C on Ga As substrate is proposed to excite the TIS at the interface of adjacent Ph C with opposite topological properties. Based on finite element method(FEM) and transfer matrix method(TMM), the dualchannel absorption can be modulated by the periodic number of middle Ph C, Fermi level of graphene, and angle of incident light(TE and TM polarizations). Especially, by fine-tuning the Fermi level of graphene around 0.4 e V, the absorption of both channels can be switched rapidly and synchronously. This design is hopefully integrated into silicon-based chips to control light.
文摘The surface and interface of heterojunction (HJ) formed with organic semiconductor (3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA)) and inorganic semiconductor p-Si were measured and analyzed by X-ray photoelectron spectroscopy (XPS).The results indicate that, in PTCDA molecule,the binding energy ( E b) of C is 284.6 eV and 288.3 eV, corresponding to C of the perylene and C of the anhydride, respectively, and the binding energy of O is 531.3 eV and 531.1 eV, corresponding to C of C=O in the anhydrides and C of C-O-C, respectively. Moreover, PTCDA lost its anhydrides and only its perylenes were left in the HJ interface.
基金the Doctoral Research Fund of University of South China(Grant No.210XQD016)the Outstanding Youth Foundation of the Hunan Education Department(Grant No.21B0406).
文摘Topological interface state(TIS)of elastic wave has attracted significant research interest due to its potential prospects in strengthening acoustic energy and enhancing the signal accuracy of damage identification and quantification.However,previous implementations on the interface modes of surface waves are limited to the non-adjustable frequency band and unalterable mode width.Here,we demonstrate the tunable TIS and topological resonance state(TRS)of Rayleigh wave by using a shape memory alloy(SMA)stubbed semi-infinite one-dimensional(1D)solid phononic crystals(PnCs),which simultaneously possesses the adjustable mode width.The mechanism of tunability stems from the phase transformation of the SMA between the martensite at low temperature and the austenite at high temperature.The tunable TIS of Rayleigh wave is realized by combining two bandgap-opened PnCs with different Zak phases.The TRS with adjustable mode width is achieved in the heterostructures by adding PnCs with Dirac point to the middle of two bandgap-opened PnCs with different Zak phases,which exhibits the extraordinary robustness in contrast to the ordinary Fabry–Perot resonance state.This research provides new possibilities for the highly adjustable Rayleigh wave manipulation and find promising applications such as tunable energy harvesters,wide-mode filters,and high-sensitivity Rayleigh wave detectors.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51361022 and 61574072)the Postdoctoral Science Foundation of Jiangxi Province,China(Grant No.2015KY12)
文摘Intrinsic hydrogenated amorphous silicon（a-Si：H） film is deposited on n-type crystalline silicon（c-Si） wafer by hotwire chemical vapor deposition（HWCVD） to analyze the amorphous/crystalline heterointerface passivation properties.The minority carrier lifetime of symmetric heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system,and a simple method of determining the interface state density（D_（it）） from lifetime measurement is proposed.The interface state density（D_（it）） measurement is also performed by using deep-level transient spectroscopy（DLTS） to prove the validity of the simple method.The microstructures and hydrogen bonding configurations of a-Si：H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry（SE） and Fourier transform infrared spectroscopy（FTIR） respectively.Lower values of interface state density（D_（it）） are obtained by using a-Si：H film with more uniform,compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD.
基金supported by the National Natural Science Foundation of China(62171172).
文摘CMOS image sensors produced by the existing CMOS manufacturing process usually have difficulty achieving complete charge transfer owing to the introduction of potential barriers or Si/SiO_(2)interface state traps in the charge transfer path,which reduces the charge transfer efficiency and image quality.Until now,scholars have only considered mechanisms that limit charge transfer from the perspectives of potential barriers and spill back effect under high illumination condition.However,the existing models have thus far ignored the charge transfer limitation due to Si/SiO_(2)interface state traps in the transfer gate channel,particularly under low illumination.Therefore,this paper proposes,for the first time,an analytical model for quantifying the incomplete charge transfer caused by Si/SiO_(2)interface state traps in the transfer gate channel under low illumination.This model can predict the variation rules of the number of untransferred charges and charge transfer efficiency when the trap energy level follows Gaussian distribution,exponential distribution and measured distribution.The model was verified with technology computer-aided design simulations,and the results showed that the simulation results exhibit the consistency with the proposed model.
基金Project supported by the National Basic Research Program of China(Grant No.2011CBA00606)
文摘Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/A1GaN/GaN metal-oxide-semiconductor （MOS） structures. Two types of device structures, namely, the recessed gate structure （RGS） and the normal gate structure （NGS）, are studied in the experiment. Interface trap parameters includ-ing trap density Dit, trap time constant ιit, and trap state energy ET in both devices have been determined. Furthermore, the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching （RIE）.
基金supported by the National Natural Science Foundation of China(Grant No.11972034)the Youth Innovation Promotion Association of the Chinese Academy of Science(Grant No.2020018).
文摘Compared with periodic structures,quasi-periodic structures have superior band gap properties and topological interface states.In this paper,a one-dimensional quasi-periodic Fibonacci water wave metamaterial model that can be used to apply quasi-periodic structures to shallow-water wave systems is presented.The fluctuation characteristics of periodic and quasi-periodic structures are examined using finite element numerical calculations based on the shallow-water wave equation.The research results show that the band characteristics of quasi-periodic structures are complex,enabling flexible control of the propagation of shallow-water waves.Furthermore,the mirror-symmetrical design of Fibonacci quasi-periodic water wave metamaterials was created to engineer the topological interface states in shallow-water wave systems,ultimately achieving successful localization of wave energy.This research will greatly enrich our understanding of topology,expand the potential applications of quasi-periodic structures,and provide new insights for manipulating water waves and harvesting energy.
基金supported by the National Natural Science Foundation of China(Nos.51937008,52107027,and 52207022)the China Postdoctoral Science Foundation(No.2022M722513)State Key Laboratory of Electrical Insulation and Power Equipment(Nos.EIPE22113 and EIPE22310).
文摘Highly stable ZnO varistor ceramics with steadily decreasing power loss have been put into applications in electrical and electronic systems for overvoltage protections, even with the absence of general understandings on their aging behaviors. In this paper, we investigated their aging nature via conducting comparative direct current (DC) aging experiments both in air and in nitrogen, during which variations of electrical properties and interface properties were measured and analyzed. Notably, continuously increasing power loss with severe electrical degradation was observed for the sample aged in nitrogen. The power loss transition was discovered to be closely related to the consumption of oxygen adsorption at the grain boundary (GB), which could, however, remain constant for the sample aged in air. The interface density of states (DOS) Ni, which is crucial for pinning the potential barrier, was proved to decrease in nitrogen, but keep stable in air. Therefore, it is concluded that the oxygen adsorption at the GB is significant for the stability of interface states, which further correlates to the long-term stability of modern stable ZnO varistor ceramics.
基金financially supported by the National Natural Science Foundation of China(No.51937008)the Science and Technology Project of State Grid Corporation of China(SGCC)(No.5216A01600W3)。
文摘Significantly enhanced varistor properties via tailoring interface states were obtained in Ca_(1-2x/3)Y_(x)Cu_(3)Ti_(4)O_(12)-SrCu_(3)Ti_(4)O_(12) composite ceramics.The breakdown field was improved to 35.8 kV cm^(-1) and the nonlinear coefficient in 0.1-1 mA cm^(-2) was enhanced to 14.6 for Ca_(0.67)Y_(0.5)Cu_(3)Ti_(4)O_(12)-SrCu_(3)Ti_(4)O_(12).Noticeably,the withstand voltage of single grain boundary reached up to 24 V while the reported ones were constant to about 3 V.Greatly improved properties were attributed to the formation of superior grain boundary rather than the reduced grain size.Surprisingly,with distinct discrepancy of nonlinear performance in the composites,the resistance and activation energy of grain boundary exhibited little differences.Based on the double Schottky barrier at grain boundary and the field-assisted thermal emission model,it was found that the excellent electrical nonlinearity arose from the formation of deeper and broader interface states at grain boundary.In this case,interface states were not easily entirely filled and the barrier could maintain its height under applied voltage.This work provides a novel routine for enhancing the varistor properties of CaCu_(3)Ti_(4)O_(12) based ceramics by manipulating interface states at grain boundary.
基金supported by the National Natural Science Foundation of China (Grant No 10764002)
文摘Stimulated photoluminescence （PL） emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emission, which can be demonstrated by its threshold behaviour and linear transition of emission intensity as a function of pump power. The oxide structure is formed by laser irradiation on silicon and its annealing treatment. A model for explaining the stimulated emission is proposed, in which the trap states of the interface between an oxide of silicon and porous nanocrystal play an important role.
基金supported by the National Natural Science Foundation of China(Grant Nos.11532001,11621062,and 11872329)the Fundamental Research Funds for the Central Universities(Grant No.2016XZZX001-05)the Shenzhen Scientific and Technological Fund for R&D(Grant No.JCYJ20170816172316775)
文摘In this study, we investigate the acoustic topological insulator or topological metastructure, where an acoustic wave can exist only in an edge or interface state instead of propagating in bulk. Breaking the structural symmetry enables the opening of the Dirac cone in the band structure and the generation of a new band gap, wherein a topological edge or interface state emerges.Further, we systematically analyze two types of topological states that stem from the acoustic valley Hall effect mechanism;one type is confined to the boundary, whereas the other type can be observed at the interface between two topologically different structures. Results denote that the selection of different boundaries along with appropriately designed interfaces provides the acoustic waves in the band gap range with abilities of one-way propagation, dual-channel propagation, immunity from backscattering at sharp corners, and/or transition between propagation at interfaces and boundaries. Furthermore, we show that the acoustic wave propagation paths can be tailored in diverse and arbitrary ways by combing the two aforementioned types of topological states.
基金supported by the National Natural Science Foundation of China(Nos.61405058 and 62075059)the Natural Science Foundation of Hunan Province(Nos.2017JJ2048 and 2020JJ4161)+1 种基金the Key Project of Scientific Research of Hunan Provincial Education Department(No.21A0013)the Fundamental Research Funds for the Central Universities(No.531118040112)。
文摘Interface states are widely applied in waveguide devices.However,previous studies failed to achieve photonic and phononic interface states independent of each other in the same crystal structure depending on the behavior of the crystal structure,i.e.,photonic or phononic crystals,making the function of interface states single.In this study,straight-line and circular photonic and phononic interface states were realized independently in sunflower-type crystals.In addition,with a defect and a metal barrier,interface states could remain almost undamaged.The results have the potential to achieve multifunction devices and reduce the cost of engineering applications.
文摘A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiO_2 interface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy.
文摘The surface and interface electronic states of tris (8 hydroxyquinoline) aluminum (Alq 3)/indium tin oxide (ITO) were measured and analyzed by X ray photoelectron spectroscopy (XPS). The results indicated that, in Alq 3 molecule, the binding energy ( E b) of Al atoms is 70.7 eV and 75.1 eV, corresponding to Al(O) and Al(Ⅲ), respectively; The binding energy of C is 285.8 eV, 286.3 eV, and 286.8 eV, corresponding to C of C-C group, C-O, and C-N bond, respectively. N is the main peak locating at 401.0 eV, corresponding to N atom of C-N=C. O atoms mainly bond to H atom, with the binding energy of 533.2 eV. As the sputtering time of Ar + ion beam increases, Al 2p , C 1s , N 1s , O 1s , In 3d 5/2 and Sn 3d 5/2 peaks slightly shift towards lower binding energy, and Al 2p , C 1s and N 1s peaks get weaker, which contributes to diffusing the oxygen, indium and tin in ITO into Alq 3 layer.
