Electronics over flexible substrates offer advantages of flexibility, portability and low cost, and promising applications in the areas of energy, information, defense science and medical service. In recent years, tre...Electronics over flexible substrates offer advantages of flexibility, portability and low cost, and promising applications in the areas of energy, information, defense science and medical service. In recent years, tremendous progress has been witnessed in the development of flexible wearable devices that can be potentially massively deployed. Of particular interest are intelligent wearable devices, such as sensors and storage cells, which can be integrated by flexible magnetoelectronic devices based on magnetic thin films. To examine this further, the magnetic properties of FeNi thin films with different thicknesses grown on flexible graphene substrate are investigated at room temperature. The coercivity increases with increasing thicknesses of FeNi thin film, which can be attributed to the increase of grain size and decrease of surface roughness. Moreover, the thickness modulated magnetic property shows a magnetic anisotropy shift increase with varying thicknesses of FeNi thin film by using measurements based on ferromagnetic resonance, which further enhances the resonance frequency. In addition, the resonance peak is quite stable after bending it for ten cycles. The result is promising for the future design of flexible magnetoelectronic devices.展开更多
Optical multilayer thin film structures have been widely used in numerous photonic applications.However,existing inverse design methods have many drawbacks because they either fail to quickly adapt to different design...Optical multilayer thin film structures have been widely used in numerous photonic applications.However,existing inverse design methods have many drawbacks because they either fail to quickly adapt to different design targets,or are difficult to suit for different types of structures,e.g.,designing for different materials at each layer.These methods also cannot accommodate versatile design situations under different angles and polarizations.In addition,how to benefit practical fabrications and manufacturing has not been extensively considered yet.In this work,we introduce OptoGPT(Opto Generative Pretrained Transformer),a decoder-only transformer,to solve all these drawbacks and issues simultaneously.展开更多
The demand of high-performance thin-film-shaped deformable electromagnetic interference(EMI)shielding devices is increasing for the next generation of wearable and miniaturized soft electronics.Although highly reflect...The demand of high-performance thin-film-shaped deformable electromagnetic interference(EMI)shielding devices is increasing for the next generation of wearable and miniaturized soft electronics.Although highly reflective conductive materials can effectively shield EMI,they prevent deformation of the devices owing to rigidity and generate secondary electromagnetic pollution simultaneously.Herein,soft and stretchable EMI shielding thin film devices with absorption-dominant EMI shielding behavior is presented.The devices consist of liquid metal(LM)layer and LM grid-patterned layer separated by a thin elastomeric film,fabricated by leveraging superior adhesion of aerosol-deposited LM on elastomer.The devices demonstrate high electromagnetic shielding effectiveness(SE)(SE_(T) of up to 75 dB)with low reflectance(SER of 1.5 dB at the resonant frequency)owing to EMI absorption induced by multiple internal reflection generated in the LM grid architectures.Remarkably,the excellent stretchability of the LM-based devices facilitates tunable EMI shielding abilities through grid space adjustment upon strain(resonant frequency shift from 81.3 to 71.3 GHz@33%strain)and is also capable of retaining shielding effectiveness even after multiple strain cycles.This newly explored device presents an advanced paradigm for powerful EMI shielding performance for next-generation smart electronics.展开更多
In this study, aluminum-doped zinc oxide(AZO) thin films were deposited onto a low-temperature polyethylene terephthalate(PET) substrate using DC magnetron sputtering. Deposition parameters included power range of 100...In this study, aluminum-doped zinc oxide(AZO) thin films were deposited onto a low-temperature polyethylene terephthalate(PET) substrate using DC magnetron sputtering. Deposition parameters included power range of 100-300 W, a working pressure of 15 mTorr, and a substrate temperature of 50 ℃. Post-deposition, flash lamp annealing(FLA) was employed as a rapid thermal processing method with a pulse duration of 1.7 ms and energy density of 7 J·cm-2, aimed at enhancing the film's quality while preserving the temperature-sensitive PET substrate. FLA offers advantages over conventional annealing,including shorter processing times and improved material properties. The structural, optical, and electrical characteristics of the AZO films were assessed using X-ray diffraction, field emission scanning electron microscopy coupled with energy-dispersive X-ray spectroscopy, ultraviolet-visible spectroscopy, and Hall effect measurements. The results demonstrated that properties of AZO films varied with deposition and annealing conditions. Films deposited at 200 W and subjected to FLA exhibited superior crystallinity, with average visible light transmittance exceeding 80% and resistivity as low as 0.38 Ω·cm representing 95%improvement in transmittance. Electrical analysis revealed that carrier concentration, mobility, and resistivity were influenced by both sputtering and annealing parameters. These findings underscore the effectiveness of FLA in optimizing AZO thin film properties, highlighting potential in optoelectronics applications.展开更多
In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly impro...In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly improved due to the catalytic effect of trimethyl-gallium (TMGa), but AlN crystal structure and composition are not affected. When the proportion of TMGa in gas phase was low, crystal quality of AlN can be improved and three-dimensional growth mode of AlN was enhanced with the increase of Ga source. When the proportion of TMGa in gas phase was high, two-dimensional growth mode of AlN was presented, with the increase of Ga source results in the deterioration of AlN crystal quality. Finally, employing a two-step growth approach, involving the initial growth of Ga-free AlN nucleation layer followed by Ga-assisted AlN growth, high quality of AlN film with flat surface was obtained and the full width at half maximum (FWHM) values of 415 nm AlN (002) and (102) planes were 465 and 597 arcsec.展开更多
Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As...Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore width.Simultaneously,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy disappears.As the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect width.Corres-pondingly,a quantitative model for the coercivity of Co thin films was formulated.The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.展开更多
We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated carriers.The experimental results show that there are photo-generated carriers in GeSn un...We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated carriers.The experimental results show that there are photo-generated carriers in GeSn under femtosecond laser excitation at 2500 nm,and its pump-induced photoconductivity can be explained by the Drude–Smith model.The carrier recombination process is mainly dominated by defect-assisted Auger processes and defect capture.The firstand second-order recombination rates are obtained by the rate equation fitting,which are(2.6±1.1)×10^(-2)ps^(-1)and(6.6±1.8)×10^(-19)cm^(3)·ps^(-1),respectively.Meanwhile,we also obtain the diffusion length of photo-generated carriers in GeSn,which is about 0.4μm,and it changes with the pump delay time.These results are important for the GeSn-based infrared optoelectronic devices,and demonstrate that Ge Sn materials can be applied to high-speed optoelectronic detectors and other applications.展开更多
The influence of oxygen vacancy-dominated carrier mobility on the performance of memristors has attractedconsiderable attention.The device’s carrier mobility can be significantly improved by forming a nano-multilayer...The influence of oxygen vacancy-dominated carrier mobility on the performance of memristors has attractedconsiderable attention.The device’s carrier mobility can be significantly improved by forming a nano-multilayeredheterostructure when the individual layer thickness is below a critical value.In this work,Pt/[ZrO_(2):Y_(2)O_(3)(YSZ)/SrTiO_(3)(STO)]n/Nb:SrTiO_(3)(NSTO)memristive devices were configurated through laser pulse deposited YSZ/STO nanomultilayeredactive layer with both Pt and NSTO acting as top and counter electrodes.Specifically,the Pt/[YSZ/STO]5/NSTO device with five consecutive layers of YSZ/STO thin film shows superior memristor performance,and itscorresponding carrier mobility presents a significantly enhanced value compared to that of other periodic numbers ofYSZ/STO composed memristive devices.This can be attributed to the increase of oxygen vacancy concentration in thedevice,as evidenced by both experimental results and theoretical analysis.This work provides a significant approach inimproving the performance of memristor dominated by oxygen vacancy transporting mechanism.展开更多
The structure–property relationship at interfaces is difficult to probe for thermoelectric materials with a complex interfacial microstructure.Designing thermoelectric materials with a simple,structurally-uniform int...The structure–property relationship at interfaces is difficult to probe for thermoelectric materials with a complex interfacial microstructure.Designing thermoelectric materials with a simple,structurally-uniform interface provides a facile way to understand how these interfaces influence the transport properties.Here,we synthesized Bi_(2−x)Sb_(x)Te_(3)(x=0,0.1,0.2,0.4)nanoflakes using a hydrothermal method,and prepared Bi_(2−x)Sb_(x)Te_(3) thin films with predominantly(0001)interfaces by stacking the nanoflakes through spin coating.The influence of the annealing temperature and Sb content on the(0001)interface structure was systematically investigated at atomic scale using aberration-corrected scanning transmission electron microscopy.Annealing and Sb doping facilitate atom diffusion and migration between adjacent nanoflakes along the(0001)interface.As such it enhances interfacial connectivity and improves the electrical transport properties.Interfac reactions create new interfaces that increase the scattering and the Seebeck coefficient.Due to the simultaneous optimization of electrical conductivity and Seebeck coefficient,the maximum power factor of the Bi_(1.8)Sb_(0.2)Te_(3) nanoflake films reaches 1.72 mW m^(−1)K^(−2),which is 43%higher than that of a pure Bi_(2)Te_(3) thin film.展开更多
AlN was used as a host material and doped with Eu grown on Si substrate by pulsed laser deposition (PLD) with low substrate temperature. The X-ray diffraction (XRD) data revealed the orientation and the composition of...AlN was used as a host material and doped with Eu grown on Si substrate by pulsed laser deposition (PLD) with low substrate temperature. The X-ray diffraction (XRD) data revealed the orientation and the composition of the thin film. The surface morphology was studied by scanning electron microscope (SEM). While raising the annealing temperatures from 300˚C to 900˚C, the emission was observed from AlN: Eu under excitation of 260 nm excitation. The photoluminescence (PL) was integrated over the visible light wavelength shifted from the blue to the red zone in the CIE 1931 chromaticity coordinates. The luminescence color coordination of AlN: Eu depending on the annealing temperatures guides the further study of Eu-doped nitrides manufacturing on white light emitting diode (LED) and full color LED devices.展开更多
In this study we are reporting annealing induced optical properties of bismuth ferrite (BiFeO3) thin films deposited on glass substrate via spin coating at 5000 rpm. The structural, optical and surface morphology of B...In this study we are reporting annealing induced optical properties of bismuth ferrite (BiFeO3) thin films deposited on glass substrate via spin coating at 5000 rpm. The structural, optical and surface morphology of BiFeO3 (BFO) thin films have been studied via X-ray diffraction (XRD), Fourier transform infrared (FT-IR), Optical absorption (UV-Vis) and Photoluminescence (PL) spectroscopy. XRD spectra confirm annealing induced phase formation of BiFeO3 possessing a rhombohedral R3c structure. The films are dense and without cracks, although the presence of porosity in BFO/glass was observed. Moreover, optical absorption spectra indicate annealing induced effect on the energy band structure in comparison to pristine BiFeO3. It is observed that annealing effect shows an intense shift in the UV-Vis spectra as diffuse absorption together with the variation in the optical band gap. The evaluated optical band gap values are approximately equal to the bulk band gap value of BiFeO3.展开更多
Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of ...Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of AZO thin films were investigated by X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, four-point probe method, and Hall-effect measurement system. The results showed that all the films obtained were polycrystalline with a hexagonal structure and average optical transmittance of AZO thin films was over 85 % at different sputtering powers. The sputtering power had a great effect on optoelectronic properties of the AZO thin films, especially on the resistivity. The lowest resistivity of 4.5×10^-4 Ω·cm combined with the transmittance of 87.1% was obtained at sputtering power of 200 W. The optical band gap varied between 3.48 and 3.68 eV.展开更多
Transparent zinc oxide thin film transistors （ZnO-TFTs） with bottom-gate and top-gate structures were constructed on 50mm silica glass substrates. The ZnO films were deposited by RF magnetron sputtering and SiO2 fil...Transparent zinc oxide thin film transistors （ZnO-TFTs） with bottom-gate and top-gate structures were constructed on 50mm silica glass substrates. The ZnO films were deposited by RF magnetron sputtering and SiO2 films served as the gate insulator layer. We found that the ZnO-TFTs with bottom-gate structure have better electrical performance than those with top-gate structure. The bottom-gate ZnO-TFTs operate as an n-channel enhancement mode, which have clear pinch off and saturation characteristics. The field effect mobility, threshold voltage, and the current on/off ratio were determined to be 18.4cm^2/（V ·s）, - 0. 5V and 10^4 , respectively. Meanwhile, the top-gate ZnO-TFTs exhibit n-chan- nel depletion mode operation and no saturation characteristics were detected. The electrical difference of the devices may be due to the different character of the interface between the channel and insulator layers. The two transistors types have high transparency in the visible light region.展开更多
Zinc nitride （Zn3N2） thin films were prepared by radio frequency （RF） magnetron sputtering on quartz glass at different substrate temperatures.The structure and composition were characterized by X-ray diffraction ...Zinc nitride （Zn3N2） thin films were prepared by radio frequency （RF） magnetron sputtering on quartz glass at different substrate temperatures.The structure and composition were characterized by X-ray diffraction and Raman-scattering measurements,respectively.The polycrystalline phase Zn3N2 films appeared when the ratio of the N2 partial pressure to the total pressure reached 1/2.The effects of the substrate temperature on the electrical and optical properties of the Zn3N2 films were investigated by Hall measurements and optical transmission spectra.The electrical and optical properties of the films were highly dependent on the substrate temperature.With the substrate temperature increasing from 100 to 300℃,the resistivity of the Zn3N2 films decreased from 0.49 to 0.023Ω·cm,the carrier concentration increased from 2.7×10^16 to 8.2×10^19cm^-3,and the electron mobility decreased from 115 to 32cm^2/（V·s）.The deposited Zn3N2 films were considered to be n-type semiconductors with a direct optical band gap,which was around 1.23eV when the substrate temperature was 200℃.展开更多
Thickness effects of thin La0.7Sr0.3MnO3 （LSMO） films on （LaAlOa）0.3（Sr2AlTaO6）0.7 substrates were examined by a slow positron beam technique. Doppler-broadening line shape parameter S was measured as a function...Thickness effects of thin La0.7Sr0.3MnO3 （LSMO） films on （LaAlOa）0.3（Sr2AlTaO6）0.7 substrates were examined by a slow positron beam technique. Doppler-broadening line shape parameter S was measured as a function of thickness and differnt annealing conditions. Results reveal there could be more than one mechanism to induce vacancy-like defects. It was found that strain-induced defects mainly influence the S value of the in situ oxygenambience annealing LSMO thin films and the strain could vanish still faster along with the increase of thickness, and the oxygen-deficient induced defects mainly affect the S value of post-annealing LSMO films.展开更多
Cd_(1-x)Zn_(x)S thin films were deposited by chemical bath deposition(CBD)on the glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film.The SEM resul...Cd_(1-x)Zn_(x)S thin films were deposited by chemical bath deposition(CBD)on the glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film.The SEM results show that the thin film surfaces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity.The distribution diagrams of thin film elements illustrate the film growth rate changes on the trend of the increase,decrease,and increase with the increase of cadmium sulfate concentration.XRD studies exhibit the crystal structure of the film is the hexagonal phase,and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M.Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value E_(g) can be expressed by the equation E_(g)(x)=0.59x^(2)+0.69x+2.43.Increasing the zinc content can increase the optical band gap,and the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration,however,all of them have good transmittance.At a concentration of 0.005 M,the thin film has good absorbance in the 300-800 nm range,80%transmittance,and band gap value of 3.24 eV,which is suitable for use as a buffer layer for solar cells.展开更多
Using the same conditions and various starting materials, such as lead acetate trihydrate, tetrabulyl titanate, zirconium n-butoxide, and acetylacetone, two kinds of solid precursors, lead zirconate titanate （PZT, Zr...Using the same conditions and various starting materials, such as lead acetate trihydrate, tetrabulyl titanate, zirconium n-butoxide, and acetylacetone, two kinds of solid precursors, lead zirconate titanate （PZT, Zr/Ti=15/85） and lead titanate （PT）, were fabricated. With three different combinations, namely, PZT, PT/PZT-PZT/PT, and PT/PZT/-/PZT/PT, three multilayer thin films were deposited on three Pt-Ti-Si3N4-SiO2-Si substrates by a modified sol-gel process. The fabrication process of the thin films is discussed in detail. We found that there is a large built-in stress in the thin film, which can be diminished by annealing at 600 ℃, when the gel is turned into solid material through drying and sintering. The Raman scattering spectra of the films with different compositions and structures were investigated. With the help of X-ray diffraction （XRD） analyzer and Raman scattering spectra analyzer, it was found that the thin films with the PT/PZT-PZT/PT structure have reasonable crystallinity and less residual stress. XRD testing shows that the diffraction pattern of the multilayer film results from the superimposition of the PZT and PT patterns. This leads to the conclusion that the PT/PZT-PZT/PT multilayer thin film has a promising future in pyroelectric infrared detectors with high performance.展开更多
La0.72Ca0.28MnO3 thin films were deposited on untilted and 15° tilted LaAlO_3 （100） single crystalline substrates by pulsed laser deposition. The polycrystalline targets used in the deposition process were synt...La0.72Ca0.28MnO3 thin films were deposited on untilted and 15° tilted LaAlO_3 （100） single crystalline substrates by pulsed laser deposition. The polycrystalline targets used in the deposition process were synthesized by sol-gel and coprecipitation methods, respectively. The structure, electrical transport properties and surface morphology of the targets and films were studied. It is found that, compared with coprecipitation method, the sol-gel target has more homogeneous components and larger density and grain size, thus the higher insulator-metal transition temperature and larger temperature coefficient of resistivity. The thin film prepared by sol-gel target has a uniform grain size and higher quality. The metal-insulator transition temperature is higher and the laser induced voltage signal is larger. Preparing the target by sol-gel method can largely improve the properties of corresponding thin films in pulsed laser deposition process.展开更多
TiO2 thin film was prepared on Si substrate by plasma chemical vapor deposition （PCVD） system and the morphologies of ZiO2 thin film were controlled by adjusting the initial precursor concentration. As the initial t...TiO2 thin film was prepared on Si substrate by plasma chemical vapor deposition （PCVD） system and the morphologies of ZiO2 thin film were controlled by adjusting the initial precursor concentration. As the initial titanium tetra-isopropoxide （TTIP） concentration increases in PCVD reactor, the shapes of TiO2 particles generated in PCVD reactor change from the spherical small-sized particles around 20 nm and spherical large-sized particles around 60 nm to aggregate particles around 100 nm. The TiO2 particles with different shapes deposit on the substrate and become the main building blocks of resulting TiO2 thin film. We observed the TiO2 thin film with smooth morphology at low initial TTIP concentration, granular morphology at medium initial TTIP concentration, and columnar morphology at high initial TTIP concentration. It is proposed that we can prepare the TiO2 thin film with controlled morphologies in one-step process just by adjusting the initial precursor concentration in PCVD .展开更多
CoFe204/Pb（Zr0.53Ti0.47）O3 （CFO/PZT） magnetoelectric composite thin films of 2-2 type structure had been prepared onto Pt/Ti/SiO2/Si substrate by a sol-gel process and spin coat- ing technique. The structure of th...CoFe204/Pb（Zr0.53Ti0.47）O3 （CFO/PZT） magnetoelectric composite thin films of 2-2 type structure had been prepared onto Pt/Ti/SiO2/Si substrate by a sol-gel process and spin coat- ing technique. The structure of the prepared thin film is substrate/PZT/CFO/PZT/CFO. Two CFO ferromagnetic layers are separated from each other by a thin PZT layer. The upper CFO layer is magnetostatically coupled with the lower CFO layer. Subsequent scan- ning electron microscopy （SEM） investigations show that the prepared thin films exhibit good morphologies and compact structure, and cross-sectional micrographs clearly display a multilayered nanostructure of multilayered thin films. The composite thin films exhibit both good magnetic and ferroelectric properties. The spacing between ferromagnetic layers can be varied by adjusting the thickness of intermediate PZT layer. It is found that the strength of magnetostatic coupling has a great impact on magnetoelectric properties of composite thin films, i.e., the magnetoelectric voltage coefficient of composite thin film tends to increase with the decreasing of pacing between two neighboring CFO ferromagnetic layers as a result of magnetostatic coupling effect.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 51901163 and 12104171)the Fundamental Research Funds for the Central Universities (Grant No. 2021XXJS025)the Natural Science Foundation of Hubei Province (Grants No. 2024AFB888)。
文摘Electronics over flexible substrates offer advantages of flexibility, portability and low cost, and promising applications in the areas of energy, information, defense science and medical service. In recent years, tremendous progress has been witnessed in the development of flexible wearable devices that can be potentially massively deployed. Of particular interest are intelligent wearable devices, such as sensors and storage cells, which can be integrated by flexible magnetoelectronic devices based on magnetic thin films. To examine this further, the magnetic properties of FeNi thin films with different thicknesses grown on flexible graphene substrate are investigated at room temperature. The coercivity increases with increasing thicknesses of FeNi thin film, which can be attributed to the increase of grain size and decrease of surface roughness. Moreover, the thickness modulated magnetic property shows a magnetic anisotropy shift increase with varying thicknesses of FeNi thin film by using measurements based on ferromagnetic resonance, which further enhances the resonance frequency. In addition, the resonance peak is quite stable after bending it for ten cycles. The result is promising for the future design of flexible magnetoelectronic devices.
基金the National Science Foundation(PFI-008513 and FET-2309403)for the support of this work.
文摘Optical multilayer thin film structures have been widely used in numerous photonic applications.However,existing inverse design methods have many drawbacks because they either fail to quickly adapt to different design targets,or are difficult to suit for different types of structures,e.g.,designing for different materials at each layer.These methods also cannot accommodate versatile design situations under different angles and polarizations.In addition,how to benefit practical fabrications and manufacturing has not been extensively considered yet.In this work,we introduce OptoGPT(Opto Generative Pretrained Transformer),a decoder-only transformer,to solve all these drawbacks and issues simultaneously.
基金supported by National Research Foundation of Korea(NRF)grant funded by the Korean government(MSIT)(RS-2024-00335216,RS-2024-00407084 and RS-2023-00207836)Korea Environment Industry&Technology Institute(KEITI)through the R&D Project of Recycling Development for Future Waste Resources Program,funded by the Korea Ministry of Environment(MOE)(2022003500003).
文摘The demand of high-performance thin-film-shaped deformable electromagnetic interference(EMI)shielding devices is increasing for the next generation of wearable and miniaturized soft electronics.Although highly reflective conductive materials can effectively shield EMI,they prevent deformation of the devices owing to rigidity and generate secondary electromagnetic pollution simultaneously.Herein,soft and stretchable EMI shielding thin film devices with absorption-dominant EMI shielding behavior is presented.The devices consist of liquid metal(LM)layer and LM grid-patterned layer separated by a thin elastomeric film,fabricated by leveraging superior adhesion of aerosol-deposited LM on elastomer.The devices demonstrate high electromagnetic shielding effectiveness(SE)(SE_(T) of up to 75 dB)with low reflectance(SER of 1.5 dB at the resonant frequency)owing to EMI absorption induced by multiple internal reflection generated in the LM grid architectures.Remarkably,the excellent stretchability of the LM-based devices facilitates tunable EMI shielding abilities through grid space adjustment upon strain(resonant frequency shift from 81.3 to 71.3 GHz@33%strain)and is also capable of retaining shielding effectiveness even after multiple strain cycles.This newly explored device presents an advanced paradigm for powerful EMI shielding performance for next-generation smart electronics.
基金supported by the MOTIE (Ministry of Trade,Industry,and Energy)in Korea,under the Fostering Global Talents for Innovative Growth Program (P0017308)supervised by the Korea Institute for Advancement of Technology (KIAT)+1 种基金supported by the MSIT (Ministry of Science and ICT),Korea,under the ITRC (Information Technology Research Center)support program (IITP-2024-2020-0-01655)supervised by the IITP (Institute of Information and Communications Technology Planning and Evaluation).
文摘In this study, aluminum-doped zinc oxide(AZO) thin films were deposited onto a low-temperature polyethylene terephthalate(PET) substrate using DC magnetron sputtering. Deposition parameters included power range of 100-300 W, a working pressure of 15 mTorr, and a substrate temperature of 50 ℃. Post-deposition, flash lamp annealing(FLA) was employed as a rapid thermal processing method with a pulse duration of 1.7 ms and energy density of 7 J·cm-2, aimed at enhancing the film's quality while preserving the temperature-sensitive PET substrate. FLA offers advantages over conventional annealing,including shorter processing times and improved material properties. The structural, optical, and electrical characteristics of the AZO films were assessed using X-ray diffraction, field emission scanning electron microscopy coupled with energy-dispersive X-ray spectroscopy, ultraviolet-visible spectroscopy, and Hall effect measurements. The results demonstrated that properties of AZO films varied with deposition and annealing conditions. Films deposited at 200 W and subjected to FLA exhibited superior crystallinity, with average visible light transmittance exceeding 80% and resistivity as low as 0.38 Ω·cm representing 95%improvement in transmittance. Electrical analysis revealed that carrier concentration, mobility, and resistivity were influenced by both sputtering and annealing parameters. These findings underscore the effectiveness of FLA in optimizing AZO thin film properties, highlighting potential in optoelectronics applications.
基金supported by the Key Research and Development Program of Jilin Provincial Department of Science and Technology (No. 20210201031GX)Innovation capacity building project of Jilin Province (No. 2023C031-2)The Key Research and Development Program of Jiangsu Province (No. BE2022057-1)。
文摘In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly improved due to the catalytic effect of trimethyl-gallium (TMGa), but AlN crystal structure and composition are not affected. When the proportion of TMGa in gas phase was low, crystal quality of AlN can be improved and three-dimensional growth mode of AlN was enhanced with the increase of Ga source. When the proportion of TMGa in gas phase was high, two-dimensional growth mode of AlN was presented, with the increase of Ga source results in the deterioration of AlN crystal quality. Finally, employing a two-step growth approach, involving the initial growth of Ga-free AlN nucleation layer followed by Ga-assisted AlN growth, high quality of AlN film with flat surface was obtained and the full width at half maximum (FWHM) values of 415 nm AlN (002) and (102) planes were 465 and 597 arcsec.
基金the financial support from the National Key Research and Development Program of China(No.2017YFB0305500)the State Key Laboratory of Powder Metallurgy,Central South University,Changsha,China.
文摘Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore width.Simultaneously,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy disappears.As the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect width.Corres-pondingly,a quantitative model for the coercivity of Co thin films was formulated.The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12004067,11974070,62027807,and 52272137)the National Key R&D Program of China(Grant No.2022YFA1403000)。
文摘We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated carriers.The experimental results show that there are photo-generated carriers in GeSn under femtosecond laser excitation at 2500 nm,and its pump-induced photoconductivity can be explained by the Drude–Smith model.The carrier recombination process is mainly dominated by defect-assisted Auger processes and defect capture.The firstand second-order recombination rates are obtained by the rate equation fitting,which are(2.6±1.1)×10^(-2)ps^(-1)and(6.6±1.8)×10^(-19)cm^(3)·ps^(-1),respectively.Meanwhile,we also obtain the diffusion length of photo-generated carriers in GeSn,which is about 0.4μm,and it changes with the pump delay time.These results are important for the GeSn-based infrared optoelectronic devices,and demonstrate that Ge Sn materials can be applied to high-speed optoelectronic detectors and other applications.
基金Projects(2023JJ30690,2022JJ30722)supported by the Natural Science Foundation of Hunan Province,ChinaProject(kq2202093)supported by the Natural Science Foundation of Changsha,ChinaProject(SKL202202SIC)supported by the Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure,China。
文摘The influence of oxygen vacancy-dominated carrier mobility on the performance of memristors has attractedconsiderable attention.The device’s carrier mobility can be significantly improved by forming a nano-multilayeredheterostructure when the individual layer thickness is below a critical value.In this work,Pt/[ZrO_(2):Y_(2)O_(3)(YSZ)/SrTiO_(3)(STO)]n/Nb:SrTiO_(3)(NSTO)memristive devices were configurated through laser pulse deposited YSZ/STO nanomultilayeredactive layer with both Pt and NSTO acting as top and counter electrodes.Specifically,the Pt/[YSZ/STO]5/NSTO device with five consecutive layers of YSZ/STO thin film shows superior memristor performance,and itscorresponding carrier mobility presents a significantly enhanced value compared to that of other periodic numbers ofYSZ/STO composed memristive devices.This can be attributed to the increase of oxygen vacancy concentration in thedevice,as evidenced by both experimental results and theoretical analysis.This work provides a significant approach inimproving the performance of memristor dominated by oxygen vacancy transporting mechanism.
基金supported by the National Natural Science Foundation of China(52272235)supported by the Fundamental Research Funds for the Central Universities(WUT:2021III016GX).
文摘The structure–property relationship at interfaces is difficult to probe for thermoelectric materials with a complex interfacial microstructure.Designing thermoelectric materials with a simple,structurally-uniform interface provides a facile way to understand how these interfaces influence the transport properties.Here,we synthesized Bi_(2−x)Sb_(x)Te_(3)(x=0,0.1,0.2,0.4)nanoflakes using a hydrothermal method,and prepared Bi_(2−x)Sb_(x)Te_(3) thin films with predominantly(0001)interfaces by stacking the nanoflakes through spin coating.The influence of the annealing temperature and Sb content on the(0001)interface structure was systematically investigated at atomic scale using aberration-corrected scanning transmission electron microscopy.Annealing and Sb doping facilitate atom diffusion and migration between adjacent nanoflakes along the(0001)interface.As such it enhances interfacial connectivity and improves the electrical transport properties.Interfac reactions create new interfaces that increase the scattering and the Seebeck coefficient.Due to the simultaneous optimization of electrical conductivity and Seebeck coefficient,the maximum power factor of the Bi_(1.8)Sb_(0.2)Te_(3) nanoflake films reaches 1.72 mW m^(−1)K^(−2),which is 43%higher than that of a pure Bi_(2)Te_(3) thin film.
文摘AlN was used as a host material and doped with Eu grown on Si substrate by pulsed laser deposition (PLD) with low substrate temperature. The X-ray diffraction (XRD) data revealed the orientation and the composition of the thin film. The surface morphology was studied by scanning electron microscope (SEM). While raising the annealing temperatures from 300˚C to 900˚C, the emission was observed from AlN: Eu under excitation of 260 nm excitation. The photoluminescence (PL) was integrated over the visible light wavelength shifted from the blue to the red zone in the CIE 1931 chromaticity coordinates. The luminescence color coordination of AlN: Eu depending on the annealing temperatures guides the further study of Eu-doped nitrides manufacturing on white light emitting diode (LED) and full color LED devices.
文摘In this study we are reporting annealing induced optical properties of bismuth ferrite (BiFeO3) thin films deposited on glass substrate via spin coating at 5000 rpm. The structural, optical and surface morphology of BiFeO3 (BFO) thin films have been studied via X-ray diffraction (XRD), Fourier transform infrared (FT-IR), Optical absorption (UV-Vis) and Photoluminescence (PL) spectroscopy. XRD spectra confirm annealing induced phase formation of BiFeO3 possessing a rhombohedral R3c structure. The films are dense and without cracks, although the presence of porosity in BFO/glass was observed. Moreover, optical absorption spectra indicate annealing induced effect on the energy band structure in comparison to pristine BiFeO3. It is observed that annealing effect shows an intense shift in the UV-Vis spectra as diffuse absorption together with the variation in the optical band gap. The evaluated optical band gap values are approximately equal to the bulk band gap value of BiFeO3.
基金supported by open research fund from Guangxi Key Laboratory of New Energy and Building Energy Saving, China
文摘Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of AZO thin films were investigated by X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, four-point probe method, and Hall-effect measurement system. The results showed that all the films obtained were polycrystalline with a hexagonal structure and average optical transmittance of AZO thin films was over 85 % at different sputtering powers. The sputtering power had a great effect on optoelectronic properties of the AZO thin films, especially on the resistivity. The lowest resistivity of 4.5×10^-4 Ω·cm combined with the transmittance of 87.1% was obtained at sputtering power of 200 W. The optical band gap varied between 3.48 and 3.68 eV.
文摘Transparent zinc oxide thin film transistors （ZnO-TFTs） with bottom-gate and top-gate structures were constructed on 50mm silica glass substrates. The ZnO films were deposited by RF magnetron sputtering and SiO2 films served as the gate insulator layer. We found that the ZnO-TFTs with bottom-gate structure have better electrical performance than those with top-gate structure. The bottom-gate ZnO-TFTs operate as an n-channel enhancement mode, which have clear pinch off and saturation characteristics. The field effect mobility, threshold voltage, and the current on/off ratio were determined to be 18.4cm^2/（V ·s）, - 0. 5V and 10^4 , respectively. Meanwhile, the top-gate ZnO-TFTs exhibit n-chan- nel depletion mode operation and no saturation characteristics were detected. The electrical difference of the devices may be due to the different character of the interface between the channel and insulator layers. The two transistors types have high transparency in the visible light region.
文摘Zinc nitride （Zn3N2） thin films were prepared by radio frequency （RF） magnetron sputtering on quartz glass at different substrate temperatures.The structure and composition were characterized by X-ray diffraction and Raman-scattering measurements,respectively.The polycrystalline phase Zn3N2 films appeared when the ratio of the N2 partial pressure to the total pressure reached 1/2.The effects of the substrate temperature on the electrical and optical properties of the Zn3N2 films were investigated by Hall measurements and optical transmission spectra.The electrical and optical properties of the films were highly dependent on the substrate temperature.With the substrate temperature increasing from 100 to 300℃,the resistivity of the Zn3N2 films decreased from 0.49 to 0.023Ω·cm,the carrier concentration increased from 2.7×10^16 to 8.2×10^19cm^-3,and the electron mobility decreased from 115 to 32cm^2/（V·s）.The deposited Zn3N2 films were considered to be n-type semiconductors with a direct optical band gap,which was around 1.23eV when the substrate temperature was 200℃.
文摘Thickness effects of thin La0.7Sr0.3MnO3 （LSMO） films on （LaAlOa）0.3（Sr2AlTaO6）0.7 substrates were examined by a slow positron beam technique. Doppler-broadening line shape parameter S was measured as a function of thickness and differnt annealing conditions. Results reveal there could be more than one mechanism to induce vacancy-like defects. It was found that strain-induced defects mainly influence the S value of the in situ oxygenambience annealing LSMO thin films and the strain could vanish still faster along with the increase of thickness, and the oxygen-deficient induced defects mainly affect the S value of post-annealing LSMO films.
基金This work was supported by the Tianjin Municipal Education Commission,Horizontal subject(grant number 70304901).
文摘Cd_(1-x)Zn_(x)S thin films were deposited by chemical bath deposition(CBD)on the glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film.The SEM results show that the thin film surfaces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity.The distribution diagrams of thin film elements illustrate the film growth rate changes on the trend of the increase,decrease,and increase with the increase of cadmium sulfate concentration.XRD studies exhibit the crystal structure of the film is the hexagonal phase,and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M.Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value E_(g) can be expressed by the equation E_(g)(x)=0.59x^(2)+0.69x+2.43.Increasing the zinc content can increase the optical band gap,and the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration,however,all of them have good transmittance.At a concentration of 0.005 M,the thin film has good absorbance in the 300-800 nm range,80%transmittance,and band gap value of 3.24 eV,which is suitable for use as a buffer layer for solar cells.
文摘Using the same conditions and various starting materials, such as lead acetate trihydrate, tetrabulyl titanate, zirconium n-butoxide, and acetylacetone, two kinds of solid precursors, lead zirconate titanate （PZT, Zr/Ti=15/85） and lead titanate （PT）, were fabricated. With three different combinations, namely, PZT, PT/PZT-PZT/PT, and PT/PZT/-/PZT/PT, three multilayer thin films were deposited on three Pt-Ti-Si3N4-SiO2-Si substrates by a modified sol-gel process. The fabrication process of the thin films is discussed in detail. We found that there is a large built-in stress in the thin film, which can be diminished by annealing at 600 ℃, when the gel is turned into solid material through drying and sintering. The Raman scattering spectra of the films with different compositions and structures were investigated. With the help of X-ray diffraction （XRD） analyzer and Raman scattering spectra analyzer, it was found that the thin films with the PT/PZT-PZT/PT structure have reasonable crystallinity and less residual stress. XRD testing shows that the diffraction pattern of the multilayer film results from the superimposition of the PZT and PT patterns. This leads to the conclusion that the PT/PZT-PZT/PT multilayer thin film has a promising future in pyroelectric infrared detectors with high performance.
基金Project(50902062)supported by the National Natural Science Foundation of ChinaProject(KKZ1200927002)supported by Key Programme of Kunming University of Science and Technology,China
文摘La0.72Ca0.28MnO3 thin films were deposited on untilted and 15° tilted LaAlO_3 （100） single crystalline substrates by pulsed laser deposition. The polycrystalline targets used in the deposition process were synthesized by sol-gel and coprecipitation methods, respectively. The structure, electrical transport properties and surface morphology of the targets and films were studied. It is found that, compared with coprecipitation method, the sol-gel target has more homogeneous components and larger density and grain size, thus the higher insulator-metal transition temperature and larger temperature coefficient of resistivity. The thin film prepared by sol-gel target has a uniform grain size and higher quality. The metal-insulator transition temperature is higher and the laser induced voltage signal is larger. Preparing the target by sol-gel method can largely improve the properties of corresponding thin films in pulsed laser deposition process.
基金supported by the Regional Innovation Center for Environmental Technology of Thermal Plasma(ETTP) at Inha University, designated by MKE(2009)supported from the Central Laboratory of Kangwon National University
文摘TiO2 thin film was prepared on Si substrate by plasma chemical vapor deposition （PCVD） system and the morphologies of ZiO2 thin film were controlled by adjusting the initial precursor concentration. As the initial titanium tetra-isopropoxide （TTIP） concentration increases in PCVD reactor, the shapes of TiO2 particles generated in PCVD reactor change from the spherical small-sized particles around 20 nm and spherical large-sized particles around 60 nm to aggregate particles around 100 nm. The TiO2 particles with different shapes deposit on the substrate and become the main building blocks of resulting TiO2 thin film. We observed the TiO2 thin film with smooth morphology at low initial TTIP concentration, granular morphology at medium initial TTIP concentration, and columnar morphology at high initial TTIP concentration. It is proposed that we can prepare the TiO2 thin film with controlled morphologies in one-step process just by adjusting the initial precursor concentration in PCVD .
文摘CoFe204/Pb（Zr0.53Ti0.47）O3 （CFO/PZT） magnetoelectric composite thin films of 2-2 type structure had been prepared onto Pt/Ti/SiO2/Si substrate by a sol-gel process and spin coat- ing technique. The structure of the prepared thin film is substrate/PZT/CFO/PZT/CFO. Two CFO ferromagnetic layers are separated from each other by a thin PZT layer. The upper CFO layer is magnetostatically coupled with the lower CFO layer. Subsequent scan- ning electron microscopy （SEM） investigations show that the prepared thin films exhibit good morphologies and compact structure, and cross-sectional micrographs clearly display a multilayered nanostructure of multilayered thin films. The composite thin films exhibit both good magnetic and ferroelectric properties. The spacing between ferromagnetic layers can be varied by adjusting the thickness of intermediate PZT layer. It is found that the strength of magnetostatic coupling has a great impact on magnetoelectric properties of composite thin films, i.e., the magnetoelectric voltage coefficient of composite thin film tends to increase with the decreasing of pacing between two neighboring CFO ferromagnetic layers as a result of magnetostatic coupling effect.
