The Langdu high-K calc-alkaline intrusions are located in the Zhongdian area, which is the southern part of the Yidun island arc. These intrusive rocks consist mainly of monzonite porphyry, granodiorite, and diorite p...The Langdu high-K calc-alkaline intrusions are located in the Zhongdian area, which is the southern part of the Yidun island arc. These intrusive rocks consist mainly of monzonite porphyry, granodiorite, and diorite porphyry. The K20 content of majority of these rocks is greater than 3%, and, in the K20-SiO2 diagram, all the samples fall into the high-K calc-alkaline to shoshonitic fields. They are enriched in light rare earth elements （LREEs） and depleted in heavy rare earth elements （HREEs; LaN/YbN = 14.3-21.2）, and show slightly negative Eu anomalies （6Eu = 0.77-1.00）. These rocks have high K, Rb, Sr, and Ba contents; moderate to high enrichment of compatible elements （Cr = 36.7-79.9 ppm, Co = 9.6-16.4 ppm, and MgO = 2.2%-3.4%）; low Nb, Ta, and Ti contents, and characteristic of low high field strength elements（HFSEs） versus incompatible elements ratios （Nb/Th = 0.75, Nb/La = 0.34） and incompatible elements ratios （Nb/U = 3.0 and Ce/Pb = 5.1, Ba/Rb = 12.0）. These rocks exhibit restricted Sr and Nd isotopic compositions, with （87Sr/S6Sr）i values ranging from 0.7044 to 0.7069 and ENd（t） values from -2.8 to -2.2. The Sr-Nd isotope systematic and specific trace element ratios suggest that Langdu high-K calc-alkaline intrusive rocks derived from a metasomatized mantle source. The unique geochemical feature of intrusive rocks can be modeled successfully using different members of a slightly enriched mantle, a slab-derived fluid, and terrigenous sediments. It can be inferred that the degree of partial melting and the presence of specific components are temporally related to the tectonic evolution of the Zhongdian island arc. Formation of these rocks can be explained by the various degrees of melting within an ascending region of the slightly enriched mantle, triggered by the subduction of the Garz^--Litang ocean, and an interaction between the slab-derived fluid and the terrigenous sediments.展开更多
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.The model includes both the inversion layer quantization effect with...The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.The model includes both the inversion layer quantization effect with finite barrier height and the polysilicon depletion effect.The impacts of dielectric constant and conduction band offset as well as the band gap on the gate current are discussed.The results indicate that the gate dielectric materials with higher dielectric constant,larger conduction band offset and the larger band gap are necessary to reduce the gate current.The calculated results can be used as a guide to select the appropriate high k gate dielectric materials for MOSFETs.展开更多
The field experiments were carried out to investigate the dynamics and models of N, P and K absorption for the cotton plants with a lint of 3 000 kg ha-1 in Xinjiang. The main results were as follows: The contents of ...The field experiments were carried out to investigate the dynamics and models of N, P and K absorption for the cotton plants with a lint of 3 000 kg ha-1 in Xinjiang. The main results were as follows: The contents of N, P2O5, K2O in cotton leaves, stems, squares and bolls decreased obviously with the time over the whole growth duration and the falling extent was greater in high-yield cotton than in CK. Contents of N in leaves, squares and bolls, in particular in the leaves of fruit-bearing shoot was higher in high-yield cotton than in CK. Contents of P2O5 in squares and bolls and that of K2O in stems were higher in high-yield cotton than in CK during the whole growing period. The accumulations of N, P2O5 and K2O in the cotton plants could be described with a logistic curve equation. There was the fastest nutrient uptake at about 90 d for N, 92 d for P2O5 and 85 d for K2O after emergence, respectively. Total nutrient accumulation of N, P2O5 and K2O was 385.8, 244. 7 and 340.3 kg ha-1, respectively. Approximately 12. 5 kg N, 8. 0 kg P2O5 and 11.1 kg K2O were needed for producing 100 kg lint with the leaves and stems under the super high yield condition of 3 000 kg ha-1 in Xinjiang.展开更多
The short-channel performance of typical 70nm MOSFETs with high K gate dielectric is widely studied by using a two dimensional(2-D) device simulator.The short-channel performance is degraded from the fringing field a...The short-channel performance of typical 70nm MOSFETs with high K gate dielectric is widely studied by using a two dimensional(2-D) device simulator.The short-channel performance is degraded from the fringing field and lower the source/drain junction resistance.The sidewall material is found very useful to eliminate the fringing-induced berrier lowing effect.展开更多
Objective High glucose(HG)can influence the osteogenic differentiation ability of periodontal ligament stem cells(PDLSCs).Human umbilical cord mesenchymal stem cell-derived exosomes(hUCMSC-exo)have broad application p...Objective High glucose(HG)can influence the osteogenic differentiation ability of periodontal ligament stem cells(PDLSCs).Human umbilical cord mesenchymal stem cell-derived exosomes(hUCMSC-exo)have broad application prospects in tissue healing.The current study aimed to explore whether hUCMSC-exo could promote the osteogenic differentiation of hPDLSCs under HG conditions and the underlying mechanism.Methods We used a 30 mmol/L glucose concentration to simulate HG conditions.CCK-8 assay was performed to evaluate the effect of hUCMSC-exo on the proliferation of hPDLSCs.Alkaline phosphatase(ALP)staining,ALP activity,and qRT-PCR were performed to evaluate the pro-osteogenic effect of hUCMSC-exo on hPDLSCs.Western blot analysis was conducted to evaluate the underlying mechanism.Results The results of the CCK-8 assay,ALP staining,ALP activity,and qRT-PCR assay showed that hUCMSC-exo significantly promoted cell proliferation and osteogenic differentiation in a dosedependent manner.The Western blot results revealed that hUCMSC-exo significantly increased the levels of p-PI3K and p-AKT in cells,and the effect was inhibited by LY294002(PI3K inhibitor)or MK2206(AKT inhibitor),respectively.Moreover,the increases in osteogenic indicators induced by hUCMSC-exo were significantly suppressed by LY294002 and MK2206.Conclusion hUCMSC-exo promote the osteogenic differentiation of hPDLSCs under HG conditions through the PI3K/AKT signaling pathway.展开更多
This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and a...This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.展开更多
40K is one of the most important atomic species for ultra-cold atomic physics. Due to the extremely low con- centration （0.012%） of 40K in natural abundance of potassium, most experiments use 4-10% enriched potassiu...40K is one of the most important atomic species for ultra-cold atomic physics. Due to the extremely low con- centration （0.012%） of 40K in natural abundance of potassium, most experiments use 4-10% enriched potassium source, which have greatly suffered from the extremely low annual production and significant price hikes in recent years. Using naturally abundant potassium source, we capture 5.4 × 10 6 cold 40K atoms with the help of a high performance of two-dimensional magneto-optical trap （2D＋ MOT）, which is almost three orders of magnitude greater than previous results without the 2D＋ MOT. The number of the 40K atoms is sufficient for most ultra-cold 40K experiments, and our approach provides an ideal alternative for the field.展开更多
This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the...This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the modulation of step doping technology and high-k dielectric on the electric field and doped profile of each zone, the HKSD device shows a greater performance. The analytical models of the potential, electric field, optimal breakdown voltage, and optimal doped profile are derived. The analytical results and the simulated results are basically consistent, which confirms the proposed model suitable for the HKSD device. The potential and electric field modulation mechanism are investigated based on the simulation and analytical models. Furthermore, the influence of the parameters on the breakdown voltage(BV) and specific on-resistance(R_(on,sp)) are obtained. The results indicate that the HKSD device has a higher BV and lower R_(on,sp) compared to the SD device and HK device.展开更多
基金supported by the National Science Foundation of China (NSFC) project(41203039)the innovation team of ore-forming dynamics and prediction of concealed deposits, KMUST(2008)
文摘The Langdu high-K calc-alkaline intrusions are located in the Zhongdian area, which is the southern part of the Yidun island arc. These intrusive rocks consist mainly of monzonite porphyry, granodiorite, and diorite porphyry. The K20 content of majority of these rocks is greater than 3%, and, in the K20-SiO2 diagram, all the samples fall into the high-K calc-alkaline to shoshonitic fields. They are enriched in light rare earth elements （LREEs） and depleted in heavy rare earth elements （HREEs; LaN/YbN = 14.3-21.2）, and show slightly negative Eu anomalies （6Eu = 0.77-1.00）. These rocks have high K, Rb, Sr, and Ba contents; moderate to high enrichment of compatible elements （Cr = 36.7-79.9 ppm, Co = 9.6-16.4 ppm, and MgO = 2.2%-3.4%）; low Nb, Ta, and Ti contents, and characteristic of low high field strength elements（HFSEs） versus incompatible elements ratios （Nb/Th = 0.75, Nb/La = 0.34） and incompatible elements ratios （Nb/U = 3.0 and Ce/Pb = 5.1, Ba/Rb = 12.0）. These rocks exhibit restricted Sr and Nd isotopic compositions, with （87Sr/S6Sr）i values ranging from 0.7044 to 0.7069 and ENd（t） values from -2.8 to -2.2. The Sr-Nd isotope systematic and specific trace element ratios suggest that Langdu high-K calc-alkaline intrusive rocks derived from a metasomatized mantle source. The unique geochemical feature of intrusive rocks can be modeled successfully using different members of a slightly enriched mantle, a slab-derived fluid, and terrigenous sediments. It can be inferred that the degree of partial melting and the presence of specific components are temporally related to the tectonic evolution of the Zhongdian island arc. Formation of these rocks can be explained by the various degrees of melting within an ascending region of the slightly enriched mantle, triggered by the subduction of the Garz^--Litang ocean, and an interaction between the slab-derived fluid and the terrigenous sediments.
文摘The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.The model includes both the inversion layer quantization effect with finite barrier height and the polysilicon depletion effect.The impacts of dielectric constant and conduction band offset as well as the band gap on the gate current are discussed.The results indicate that the gate dielectric materials with higher dielectric constant,larger conduction band offset and the larger band gap are necessary to reduce the gate current.The calculated results can be used as a guide to select the appropriate high k gate dielectric materials for MOSFETs.
基金supported by the National Key Technologies R&D Program in 10th Five-year Plan of China(2001BA507A)the National Natural Sicence Foundation of China(39760040).
文摘The field experiments were carried out to investigate the dynamics and models of N, P and K absorption for the cotton plants with a lint of 3 000 kg ha-1 in Xinjiang. The main results were as follows: The contents of N, P2O5, K2O in cotton leaves, stems, squares and bolls decreased obviously with the time over the whole growth duration and the falling extent was greater in high-yield cotton than in CK. Contents of N in leaves, squares and bolls, in particular in the leaves of fruit-bearing shoot was higher in high-yield cotton than in CK. Contents of P2O5 in squares and bolls and that of K2O in stems were higher in high-yield cotton than in CK during the whole growing period. The accumulations of N, P2O5 and K2O in the cotton plants could be described with a logistic curve equation. There was the fastest nutrient uptake at about 90 d for N, 92 d for P2O5 and 85 d for K2O after emergence, respectively. Total nutrient accumulation of N, P2O5 and K2O was 385.8, 244. 7 and 340.3 kg ha-1, respectively. Approximately 12. 5 kg N, 8. 0 kg P2O5 and 11.1 kg K2O were needed for producing 100 kg lint with the leaves and stems under the super high yield condition of 3 000 kg ha-1 in Xinjiang.
文摘The short-channel performance of typical 70nm MOSFETs with high K gate dielectric is widely studied by using a two dimensional(2-D) device simulator.The short-channel performance is degraded from the fringing field and lower the source/drain junction resistance.The sidewall material is found very useful to eliminate the fringing-induced berrier lowing effect.
文摘Objective High glucose(HG)can influence the osteogenic differentiation ability of periodontal ligament stem cells(PDLSCs).Human umbilical cord mesenchymal stem cell-derived exosomes(hUCMSC-exo)have broad application prospects in tissue healing.The current study aimed to explore whether hUCMSC-exo could promote the osteogenic differentiation of hPDLSCs under HG conditions and the underlying mechanism.Methods We used a 30 mmol/L glucose concentration to simulate HG conditions.CCK-8 assay was performed to evaluate the effect of hUCMSC-exo on the proliferation of hPDLSCs.Alkaline phosphatase(ALP)staining,ALP activity,and qRT-PCR were performed to evaluate the pro-osteogenic effect of hUCMSC-exo on hPDLSCs.Western blot analysis was conducted to evaluate the underlying mechanism.Results The results of the CCK-8 assay,ALP staining,ALP activity,and qRT-PCR assay showed that hUCMSC-exo significantly promoted cell proliferation and osteogenic differentiation in a dosedependent manner.The Western blot results revealed that hUCMSC-exo significantly increased the levels of p-PI3K and p-AKT in cells,and the effect was inhibited by LY294002(PI3K inhibitor)or MK2206(AKT inhibitor),respectively.Moreover,the increases in osteogenic indicators induced by hUCMSC-exo were significantly suppressed by LY294002 and MK2206.Conclusion hUCMSC-exo promote the osteogenic differentiation of hPDLSCs under HG conditions through the PI3K/AKT signaling pathway.
基金Project supported by the National Natural Science Foundation of China （Grant No 90307006）, by the National High Tech. Development Program of China （Grant No 2003AA1Z1370）, and by the State Key Development Program for Basic Research of China （Grant No G2000036500）.
文摘This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.
基金Supported by the National Key Research and Development Program of China under Grant Nos 2016YFA0300600 and2016YFA0301500the National Natural Science Foundation of China under Grant Nos 11474347,61227902 and 61775232
文摘40K is one of the most important atomic species for ultra-cold atomic physics. Due to the extremely low con- centration （0.012%） of 40K in natural abundance of potassium, most experiments use 4-10% enriched potassium source, which have greatly suffered from the extremely low annual production and significant price hikes in recent years. Using naturally abundant potassium source, we capture 5.4 × 10 6 cold 40K atoms with the help of a high performance of two-dimensional magneto-optical trap （2D＋ MOT）, which is almost three orders of magnitude greater than previous results without the 2D＋ MOT. The number of the 40K atoms is sufficient for most ultra-cold 40K experiments, and our approach provides an ideal alternative for the field.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61704084 and 61874059)。
文摘This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the modulation of step doping technology and high-k dielectric on the electric field and doped profile of each zone, the HKSD device shows a greater performance. The analytical models of the potential, electric field, optimal breakdown voltage, and optimal doped profile are derived. The analytical results and the simulated results are basically consistent, which confirms the proposed model suitable for the HKSD device. The potential and electric field modulation mechanism are investigated based on the simulation and analytical models. Furthermore, the influence of the parameters on the breakdown voltage(BV) and specific on-resistance(R_(on,sp)) are obtained. The results indicate that the HKSD device has a higher BV and lower R_(on,sp) compared to the SD device and HK device.
