The structures of Ta/Ni81Fe19 and Ni81Fe19/Ta are commonly used in magnetoresistance multilayers. It is found that the thickness of dead layer in Ta/Ni81Fe19/Ta was about 1.6±0.2nm. X-ray photoelectron spectrosco...The structures of Ta/Ni81Fe19 and Ni81Fe19/Ta are commonly used in magnetoresistance multilayers. It is found that the thickness of dead layer in Ta/Ni81Fe19/Ta was about 1.6±0.2nm. X-ray photoelectron spectroscopy (XPS) was used to study the interfaces of Ta/Ni81Fe19 and Ni81Fe19/Ta. The results show that there is a reaction at the two interfaces: 2Ta+Ni=NiTa2, which caused the thinning of the effective NiFe layer. Furthermore, this reaction could also explain the phenomenon that the dead layer thickness of spin valves multilayers prepared by MBE is thinner than those prepared by magnetron sputtering.展开更多
A 994 g mass p-type PCGe detector has been deployed during the first phase of the China Dark matter EXperiment, aiming at direct searches for light weakly interacting massive particles. Measuring the thickness of the ...A 994 g mass p-type PCGe detector has been deployed during the first phase of the China Dark matter EXperiment, aiming at direct searches for light weakly interacting massive particles. Measuring the thickness of the dead layer of a p-type germanium detector is an issue of major importance since it determines the fiducial mass of the detector. This work reports a method using an uncollimated ^133Ba source to determine the dead layer thickness. The experimental design, data analysis and Monte Carlo simulation processes, as well as the statistical and systematic uncertainties are described. A dead layer thickness of 1.02 mm was obtained based on a comparison between the experimental data and the simulated results.展开更多
Introduction The dead layer thickness provided by the manufacturer increases with the aging of the HPGe detector;the increase of dead layer thickness leads to the decrease in the detector’s efficiency,not only due to...Introduction The dead layer thickness provided by the manufacturer increases with the aging of the HPGe detector;the increase of dead layer thickness leads to the decrease in the detector’s efficiency,not only due to gamma rays attenuation in the dead layer but also due to the reduction of the active volume of the detector.Purpose In this work,the dead layer influence on HPGe detector efficiency was studied by Monte Carlo simulation.Materials and methods The detector model was developed using Monte Carlo N Particle(MCNP5)code for adjustment of the dead layer thickness;the adjustment was performed according to a specific irradiation configuration by collimation approach using three reference point sources:^(241)Am(59.5 keV),^(137)Cs(661.6 keV)and ^(60)Co(1173.2 keV;1332.5 keV).Result The calculated efficiencies were compared to the measured intrinsic efficiency ones for these point sources;a good agreement between Monte Carlo and measurements results was found after the experimental validation.Conclusion The results confirm the variation in the dead layer thickness according to aging of the detector;the average change of dead layer is in order of 1.30±0.05 mm after 9 years.展开更多
Purpose This work aims to study the increase in dead layer thickness of an HPGe N-type detector during its operational period from 2012 to 2018.Methods The dead layer was examined along three Ge-crystal surfaces,such ...Purpose This work aims to study the increase in dead layer thickness of an HPGe N-type detector during its operational period from 2012 to 2018.Methods The dead layer was examined along three Ge-crystal surfaces,such as outer frontal,outer lateral,and inner lateral.These parameters were optimized using response surface methodology(RSM)with a Box–Behnken design(BBD).The Monte Carlo calculations using the GAMOS(Geant4-based Architecture for Medicine-Oriented Simulations)code were performed to evaluate the detector’s efficiency at different values of the inactive germanium layer.Results and conclusion The optimal combination of dead layer thickness has been identified using the desirability function approach,which is a useful tool to optimize multi-response problems.To find the variation in dead layer thickness over the operational period,the optimization procedure was reiterated for both experimental efficiencies measured in 2012 and 2018.The obtained results show that dead layers thickness has increased from 0.6141 mm to 0.7447 mm,0.0803 mm to 2.2721 mm,and 1.5012 mm to 1.6091 mm for the outer frontal,outer lateral,and inner lateral surfaces,respectively.展开更多
Multilayered FeSi/Si amorphous films with fixed FeSi layer thickness and different Si layer thicknesses have been studied by conversion electron Mossbauer spectroscopy at room temperature. The results showed that with...Multilayered FeSi/Si amorphous films with fixed FeSi layer thickness and different Si layer thicknesses have been studied by conversion electron Mossbauer spectroscopy at room temperature. The results showed that with decreasing the Si layer thickness, the hyperfine field of samples increased and the thickness of interface dead layers arisen from the atomic interdiffusion effect decreased. These are due to the coupling effect between the magnetic layers. When the Si layers are thinner than 0.88 nm, the direction of the magnetization is out of the film plane.展开更多
对P型基底均匀掺杂的情况下电子轰击有源像素传感器(EBAPS)的电荷收集效率进行了理论模拟研究,依据低能电子与固体的相互作用模型结合Monte-Carlo计算方法模拟了光电子入射到死层和倍增层中的运动轨迹,并分析了经过死层后的能量损失率...对P型基底均匀掺杂的情况下电子轰击有源像素传感器(EBAPS)的电荷收集效率进行了理论模拟研究,依据低能电子与固体的相互作用模型结合Monte-Carlo计算方法模拟了光电子入射到死层和倍增层中的运动轨迹,并分析了经过死层后的能量损失率所受影响因素;依据半导体理论研究了P型基底掺杂浓度、膜厚、入射电子能量对电荷收集效率的影响因素。最终获得的电荷收集效率理论模拟结果与已报道的(4 ke V,均匀掺杂的EPAPS)实测的结果较为相符,表明此文的模拟结果可以为高增益的EBAPS的制作提供理论指导。展开更多
基金This work was supported by the National Natural Science Foundation of China(under Grant No.19890310).
文摘The structures of Ta/Ni81Fe19 and Ni81Fe19/Ta are commonly used in magnetoresistance multilayers. It is found that the thickness of dead layer in Ta/Ni81Fe19/Ta was about 1.6±0.2nm. X-ray photoelectron spectroscopy (XPS) was used to study the interfaces of Ta/Ni81Fe19 and Ni81Fe19/Ta. The results show that there is a reaction at the two interfaces: 2Ta+Ni=NiTa2, which caused the thinning of the effective NiFe layer. Furthermore, this reaction could also explain the phenomenon that the dead layer thickness of spin valves multilayers prepared by MBE is thinner than those prepared by magnetron sputtering.
基金Supported by National Natural Science Foundation of China(10935005,10945002,11275107,11175099)
文摘A 994 g mass p-type PCGe detector has been deployed during the first phase of the China Dark matter EXperiment, aiming at direct searches for light weakly interacting massive particles. Measuring the thickness of the dead layer of a p-type germanium detector is an issue of major importance since it determines the fiducial mass of the detector. This work reports a method using an uncollimated ^133Ba source to determine the dead layer thickness. The experimental design, data analysis and Monte Carlo simulation processes, as well as the statistical and systematic uncertainties are described. A dead layer thickness of 1.02 mm was obtained based on a comparison between the experimental data and the simulated results.
文摘Introduction The dead layer thickness provided by the manufacturer increases with the aging of the HPGe detector;the increase of dead layer thickness leads to the decrease in the detector’s efficiency,not only due to gamma rays attenuation in the dead layer but also due to the reduction of the active volume of the detector.Purpose In this work,the dead layer influence on HPGe detector efficiency was studied by Monte Carlo simulation.Materials and methods The detector model was developed using Monte Carlo N Particle(MCNP5)code for adjustment of the dead layer thickness;the adjustment was performed according to a specific irradiation configuration by collimation approach using three reference point sources:^(241)Am(59.5 keV),^(137)Cs(661.6 keV)and ^(60)Co(1173.2 keV;1332.5 keV).Result The calculated efficiencies were compared to the measured intrinsic efficiency ones for these point sources;a good agreement between Monte Carlo and measurements results was found after the experimental validation.Conclusion The results confirm the variation in the dead layer thickness according to aging of the detector;the average change of dead layer is in order of 1.30±0.05 mm after 9 years.
文摘Purpose This work aims to study the increase in dead layer thickness of an HPGe N-type detector during its operational period from 2012 to 2018.Methods The dead layer was examined along three Ge-crystal surfaces,such as outer frontal,outer lateral,and inner lateral.These parameters were optimized using response surface methodology(RSM)with a Box–Behnken design(BBD).The Monte Carlo calculations using the GAMOS(Geant4-based Architecture for Medicine-Oriented Simulations)code were performed to evaluate the detector’s efficiency at different values of the inactive germanium layer.Results and conclusion The optimal combination of dead layer thickness has been identified using the desirability function approach,which is a useful tool to optimize multi-response problems.To find the variation in dead layer thickness over the operational period,the optimization procedure was reiterated for both experimental efficiencies measured in 2012 and 2018.The obtained results show that dead layers thickness has increased from 0.6141 mm to 0.7447 mm,0.0803 mm to 2.2721 mm,and 1.5012 mm to 1.6091 mm for the outer frontal,outer lateral,and inner lateral surfaces,respectively.
基金The Project Supported by National Natural Science Foundation of China
文摘Multilayered FeSi/Si amorphous films with fixed FeSi layer thickness and different Si layer thicknesses have been studied by conversion electron Mossbauer spectroscopy at room temperature. The results showed that with decreasing the Si layer thickness, the hyperfine field of samples increased and the thickness of interface dead layers arisen from the atomic interdiffusion effect decreased. These are due to the coupling effect between the magnetic layers. When the Si layers are thinner than 0.88 nm, the direction of the magnetization is out of the film plane.
文摘对P型基底均匀掺杂的情况下电子轰击有源像素传感器(EBAPS)的电荷收集效率进行了理论模拟研究,依据低能电子与固体的相互作用模型结合Monte-Carlo计算方法模拟了光电子入射到死层和倍增层中的运动轨迹,并分析了经过死层后的能量损失率所受影响因素;依据半导体理论研究了P型基底掺杂浓度、膜厚、入射电子能量对电荷收集效率的影响因素。最终获得的电荷收集效率理论模拟结果与已报道的(4 ke V,均匀掺杂的EPAPS)实测的结果较为相符,表明此文的模拟结果可以为高增益的EBAPS的制作提供理论指导。
