The flashover of insulator strings occurring at normal working voltages undercontaminated/polluted conditions, obviously deserves serious consideration. Though much researchhas been gone into pollution-induced flashov...The flashover of insulator strings occurring at normal working voltages undercontaminated/polluted conditions, obviously deserves serious consideration. Though much researchhas been gone into pollution-induced flashover phenomena but grey areas still exist in ourknowledge. In the present experimental study the breakdown (flashover) voltages across gaps oninsulator top surfaces and gaps between sheds (on the underside of an insulator), also the flashoverstudies on a single unit and a 3-unit insulator strings were carried out. An attempt has been madeto correlate the values obtained for all the cases. From the present investigation it was found thatresistance measurement of individual units of a polluted 3-unit string before and after flashoverindicates that strongly differing resistances could be the cause of flashover of ceramic discinsulator strings.展开更多
Insulator becomes wet partially or completely, and the pollution layer on itbecomes conductive, when collecting pollutants for an extended period during dew, light rain, mist,fog or snow melting. Heavy rain is a compl...Insulator becomes wet partially or completely, and the pollution layer on itbecomes conductive, when collecting pollutants for an extended period during dew, light rain, mist,fog or snow melting. Heavy rain is a complicated factor that it may wash away the pollution layerwithout initiating other stages of breakdown or it may bridge the gaps between sheds to promoteflashover. The insulator with a conducting pollution layer being energized, can cause a surfaceleakage current to flow (also temperature-rise). As the surface conductivity is non-uniform, theconducting pollution layer becomes broken by dry bands (at spots of high current density),interrupting the flow of leakage current. Voltage across insulator gets concentrated across drybands, and causes high electric stress and breakdown (dry band arcing). If the resistance of theinsulator surface is sufficiently low, the dry band arcs can be propagated to bridge the terminalscausing flashover. The present paper concerns the evaluation of the temperature distribution alongthe surface of an energized artificially polluted insulator string.展开更多
This is an extended version of the same titled paper presented at the 21st CIRED. It discusses a new technique for identification and location of defective insulator strings in power lines based on the analysis of hig...This is an extended version of the same titled paper presented at the 21st CIRED. It discusses a new technique for identification and location of defective insulator strings in power lines based on the analysis of high frequency signals generated by corona effect. Damaged insulator strings may lead to loss of insulation and hence to the corona effect, in other words, to partial discharges. These partial discharges can be detected by a system composed of a capacitive coupling device （region between the phase and the metal body of a current transformer）, a data acquisition board and a computer. Analyzing the waveform of these partial discharges through a neural network based software, it is possible to identify and locate the defective insulator string. This paper discusses how this software analysis works and why its technique is suitable for this application. Hence the results of key tests performed along the development are discussed, pointing out the main factors that affect their performance.展开更多
A 4H-silicon carbide metal-insulator-semiconductor structure with ultra-thin Al2O3 as the gate dielectric, deposited by atomic layer deposition on tile epitaxial layer of a 4H-SiC （0001） 80N-/N＋ substrate, has been...A 4H-silicon carbide metal-insulator-semiconductor structure with ultra-thin Al2O3 as the gate dielectric, deposited by atomic layer deposition on tile epitaxial layer of a 4H-SiC （0001） 80N-/N＋ substrate, has been fabricated. The experimental results indicate that the prepared ultra-thin Al2O3 gate dielectric exhibits good physical and electrical characteristics, including a high breakdown electrical field of 25 MV/cm, excellent interface properties （1 × 10^14 cm^-2） and low gate-leakage current （IG = 1 × 10^-3 A/cm 2@Eox = 8 MV/cm）. Analysis of the current conduction mecha- nism on the deposited Al2O3 gate dielectric was also systematically performed. The confirmed conduction mechanisms consisted of Fowler-Nordheim （FN） tuaneling, the Frenkel-Poole mechanism, direct tunneling and Schottky emission, and the dominant current conduction mechanism depends on the applied electrical field. When the gate leakage current mechanism is dominated by FN tunneling, the barrier height of SiC/Al2O3 is 1.4 eV, which can meet the requirements of silicon carbide metal-insulator-semiconductor transistor devices.展开更多
运行经验表明,并联间隙(parallel gap device,PGD)能有效地降低由雷击引起的输电线路绝缘子损坏故障率,但目前高海拔地区的绝缘子串与并联间隙的绝缘配合研究还很薄弱。因此,在特高压工程技术(昆明)国家工程实验室进行了负极性标准雷电...运行经验表明,并联间隙(parallel gap device,PGD)能有效地降低由雷击引起的输电线路绝缘子损坏故障率,但目前高海拔地区的绝缘子串与并联间隙的绝缘配合研究还很薄弱。因此,在特高压工程技术(昆明)国家工程实验室进行了负极性标准雷电冲击电压下220kV瓷、复合绝缘子串及不同间距的并联间隙雷电冲击闪络及伏秒特性试验研究。分析了不同绝缘子串对其并联间隙的雷击闪络特性和伏秒特性的影响;并结合并联间隙与绝缘子串的绝缘配合原则和电弧路径,确定了并联间隙保护绝缘子串的最优间距。结果表明:绝缘子串电场分布会影响并联间隙雷电冲击闪络特性;推荐的并联间隙对绝缘子串具有良好的保护作用。展开更多
文摘The flashover of insulator strings occurring at normal working voltages undercontaminated/polluted conditions, obviously deserves serious consideration. Though much researchhas been gone into pollution-induced flashover phenomena but grey areas still exist in ourknowledge. In the present experimental study the breakdown (flashover) voltages across gaps oninsulator top surfaces and gaps between sheds (on the underside of an insulator), also the flashoverstudies on a single unit and a 3-unit insulator strings were carried out. An attempt has been madeto correlate the values obtained for all the cases. From the present investigation it was found thatresistance measurement of individual units of a polluted 3-unit string before and after flashoverindicates that strongly differing resistances could be the cause of flashover of ceramic discinsulator strings.
文摘Insulator becomes wet partially or completely, and the pollution layer on itbecomes conductive, when collecting pollutants for an extended period during dew, light rain, mist,fog or snow melting. Heavy rain is a complicated factor that it may wash away the pollution layerwithout initiating other stages of breakdown or it may bridge the gaps between sheds to promoteflashover. The insulator with a conducting pollution layer being energized, can cause a surfaceleakage current to flow (also temperature-rise). As the surface conductivity is non-uniform, theconducting pollution layer becomes broken by dry bands (at spots of high current density),interrupting the flow of leakage current. Voltage across insulator gets concentrated across drybands, and causes high electric stress and breakdown (dry band arcing). If the resistance of theinsulator surface is sufficiently low, the dry band arcs can be propagated to bridge the terminalscausing flashover. The present paper concerns the evaluation of the temperature distribution alongthe surface of an energized artificially polluted insulator string.
文摘This is an extended version of the same titled paper presented at the 21st CIRED. It discusses a new technique for identification and location of defective insulator strings in power lines based on the analysis of high frequency signals generated by corona effect. Damaged insulator strings may lead to loss of insulation and hence to the corona effect, in other words, to partial discharges. These partial discharges can be detected by a system composed of a capacitive coupling device （region between the phase and the metal body of a current transformer）, a data acquisition board and a computer. Analyzing the waveform of these partial discharges through a neural network based software, it is possible to identify and locate the defective insulator string. This paper discusses how this software analysis works and why its technique is suitable for this application. Hence the results of key tests performed along the development are discussed, pointing out the main factors that affect their performance.
基金supported by the 2010 School Fundamental Scientific Research Fund of Xidian University (Grant No. K50510250008)
文摘A 4H-silicon carbide metal-insulator-semiconductor structure with ultra-thin Al2O3 as the gate dielectric, deposited by atomic layer deposition on tile epitaxial layer of a 4H-SiC （0001） 80N-/N＋ substrate, has been fabricated. The experimental results indicate that the prepared ultra-thin Al2O3 gate dielectric exhibits good physical and electrical characteristics, including a high breakdown electrical field of 25 MV/cm, excellent interface properties （1 × 10^14 cm^-2） and low gate-leakage current （IG = 1 × 10^-3 A/cm 2@Eox = 8 MV/cm）. Analysis of the current conduction mecha- nism on the deposited Al2O3 gate dielectric was also systematically performed. The confirmed conduction mechanisms consisted of Fowler-Nordheim （FN） tuaneling, the Frenkel-Poole mechanism, direct tunneling and Schottky emission, and the dominant current conduction mechanism depends on the applied electrical field. When the gate leakage current mechanism is dominated by FN tunneling, the barrier height of SiC/Al2O3 is 1.4 eV, which can meet the requirements of silicon carbide metal-insulator-semiconductor transistor devices.
文摘运行经验表明,并联间隙(parallel gap device,PGD)能有效地降低由雷击引起的输电线路绝缘子损坏故障率,但目前高海拔地区的绝缘子串与并联间隙的绝缘配合研究还很薄弱。因此,在特高压工程技术(昆明)国家工程实验室进行了负极性标准雷电冲击电压下220kV瓷、复合绝缘子串及不同间距的并联间隙雷电冲击闪络及伏秒特性试验研究。分析了不同绝缘子串对其并联间隙的雷击闪络特性和伏秒特性的影响;并结合并联间隙与绝缘子串的绝缘配合原则和电弧路径,确定了并联间隙保护绝缘子串的最优间距。结果表明:绝缘子串电场分布会影响并联间隙雷电冲击闪络特性;推荐的并联间隙对绝缘子串具有良好的保护作用。
