Room-temperature ferromagnetism with a Curie temperature higher than 380 K was studied in GaN: Mn thin films grown by metal-organic chemical vapor deposition. By etching artificial microstructures on the GaN: Mn layer...Room-temperature ferromagnetism with a Curie temperature higher than 380 K was studied in GaN: Mn thin films grown by metal-organic chemical vapor deposition. By etching artificial microstructures on the GaN: Mn layer,strong magnetic responses were observed in the magnetic force microscopy (MFM) measurement,which revealed that the films were independent of dopant particles and clusters. Numerical simulation on the data of atomic force microscope (AFM) and MFM measurements covering the whole microstructure validated the formation of long range magnetic order. This result excluded a variety of controversial origins of room-temperature ferromagnetism in the GaN: Mn and gave a strong evidence of our GaN: Mn as the intrinsic diluted magnetic semiconductor (DMS). The forwarded method for accurate characterization of long range magnetic order could be applied to a wide range of DMS and diluted magnetic oxide (DMO) systems.展开更多
A detailed study is presented on magnetic, electrical and optical properties of Gal_xMnxN： Si film grown by metal organic chemical vapor deposition （MOCVD） with high-purity Sill4 as the Si dopant source. The room-t...A detailed study is presented on magnetic, electrical and optical properties of Gal_xMnxN： Si film grown by metal organic chemical vapor deposition （MOCVD） with high-purity Sill4 as the Si dopant source. The room-temperature field dependence magnetization and zero-field-cooled （ZFC）/field-cooled （FC） measurements indicate that the film remains room-temperature ferromagnetism and it declines slightly after Si co-doping. However, room-temperature Hall measurements indicate that the electrical property of the film improves distinctly compared with Gal-xMnxN. Cathode luminescence （CL） measurements show an obvious enhancement in luminous property and different peak strength changes at three different positions. Therefore, we demonstrate that Fermi level and the electron structure of Mn atoms will change with variation of the impurities co-doped and the intrinsic defects and this may be related with room-temperature ferromagnetism and the other corresponding properties of the film.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos.60577030,60776041,60876035)the National Key Basic Research Special Foundation of China (Grant Nos.TG2007CB307004,2006CB921607)
文摘Room-temperature ferromagnetism with a Curie temperature higher than 380 K was studied in GaN: Mn thin films grown by metal-organic chemical vapor deposition. By etching artificial microstructures on the GaN: Mn layer,strong magnetic responses were observed in the magnetic force microscopy (MFM) measurement,which revealed that the films were independent of dopant particles and clusters. Numerical simulation on the data of atomic force microscope (AFM) and MFM measurements covering the whole microstructure validated the formation of long range magnetic order. This result excluded a variety of controversial origins of room-temperature ferromagnetism in the GaN: Mn and gave a strong evidence of our GaN: Mn as the intrinsic diluted magnetic semiconductor (DMS). The forwarded method for accurate characterization of long range magnetic order could be applied to a wide range of DMS and diluted magnetic oxide (DMO) systems.
文摘A detailed study is presented on magnetic, electrical and optical properties of Gal_xMnxN： Si film grown by metal organic chemical vapor deposition （MOCVD） with high-purity Sill4 as the Si dopant source. The room-temperature field dependence magnetization and zero-field-cooled （ZFC）/field-cooled （FC） measurements indicate that the film remains room-temperature ferromagnetism and it declines slightly after Si co-doping. However, room-temperature Hall measurements indicate that the electrical property of the film improves distinctly compared with Gal-xMnxN. Cathode luminescence （CL） measurements show an obvious enhancement in luminous property and different peak strength changes at three different positions. Therefore, we demonstrate that Fermi level and the electron structure of Mn atoms will change with variation of the impurities co-doped and the intrinsic defects and this may be related with room-temperature ferromagnetism and the other corresponding properties of the film.
