In the past tens of years,the power conversion efficiency of Cu(In,Ga)Se2(CIGS)has continuously improved and been one of the fastest growing photovoltaic technologies that can also help us achieve the goal of carbon e...In the past tens of years,the power conversion efficiency of Cu(In,Ga)Se2(CIGS)has continuously improved and been one of the fastest growing photovoltaic technologies that can also help us achieve the goal of carbon emissions reduction.Among several key advances,the alkali element post-deposition treatment(AlK PDT)is regarded as the most important finding in the last 10 years,which has led to the improvement of CIGS solar cell efficiency from 20.4%to 23.35%.A profound understanding of the influence of alkali element on the chemical and electrical properties of the CIGS absorber along with the underlying mechanisms is of great importance.In this review,we summarize the strategies of the alkali element doping in CIGS solar cell,the problems to be noted in the PDT process,the effects on the CdS buffer layer,the effects of different alkali elements on the structure and morphology of the CIGS absorber layer,and retrospect the progress in the CIGS solar cell with emphasis on the alkali element post deposition treatment.展开更多
The X-ray free-electron laser(XFEL),a new X-ray light source,presents numerous opportunities for scientific research.Self-amplified spontaneous emission(SASE)is one generation mode of XFEL in which each pulse is uniqu...The X-ray free-electron laser(XFEL),a new X-ray light source,presents numerous opportunities for scientific research.Self-amplified spontaneous emission(SASE)is one generation mode of XFEL in which each pulse is unique.In this paper,we propose a pinhole diffraction method to accurately determine the XFEL photon energy,pulses'photon energy jitter,and sample-to-detector distance for soft X-ray.This method was verified at Shanghai soft X-ray Free-Electron Laser(SXFEL).The measured average photon energy was 406.5 eV,with a photon energy jitter(root-mean-square)of 1.39 eV,and the sample-to-detector distance was calculated to be 16.61 cm.展开更多
基金supported by the National Key R&D Program of China Grant(no.2018YFB1500200)the National Natural Science Foundation of China under Grant(nos.61804159 and 52173243)+2 种基金the Natural Science Foundation of Guangdong Province,Guangzhou,China(no.2021A1515011409)Shenzhen&Hong Kong Joint Research Program(no.SGDX20201103095605015)SIAT-CUHK Joint Laboratory of Photovoltaic Solar Energy.
文摘In the past tens of years,the power conversion efficiency of Cu(In,Ga)Se2(CIGS)has continuously improved and been one of the fastest growing photovoltaic technologies that can also help us achieve the goal of carbon emissions reduction.Among several key advances,the alkali element post-deposition treatment(AlK PDT)is regarded as the most important finding in the last 10 years,which has led to the improvement of CIGS solar cell efficiency from 20.4%to 23.35%.A profound understanding of the influence of alkali element on the chemical and electrical properties of the CIGS absorber along with the underlying mechanisms is of great importance.In this review,we summarize the strategies of the alkali element doping in CIGS solar cell,the problems to be noted in the PDT process,the effects on the CdS buffer layer,the effects of different alkali elements on the structure and morphology of the CIGS absorber layer,and retrospect the progress in the CIGS solar cell with emphasis on the alkali element post deposition treatment.
基金supported by the Major State Basic Research Development Program of China(No.2022YFA1603703)the National Natural Science Foundation of China(No.12335020)+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB37040303)supported by the Shanghai Soft X-ray Free-Electron Laser Beamline Project。
文摘The X-ray free-electron laser(XFEL),a new X-ray light source,presents numerous opportunities for scientific research.Self-amplified spontaneous emission(SASE)is one generation mode of XFEL in which each pulse is unique.In this paper,we propose a pinhole diffraction method to accurately determine the XFEL photon energy,pulses'photon energy jitter,and sample-to-detector distance for soft X-ray.This method was verified at Shanghai soft X-ray Free-Electron Laser(SXFEL).The measured average photon energy was 406.5 eV,with a photon energy jitter(root-mean-square)of 1.39 eV,and the sample-to-detector distance was calculated to be 16.61 cm.
