Silicon Carbide (SiC) wafers have been widely used in micro- and nano-devices due to their excellent optical and material properties. However, polishing SiC wafers has been challenging and inefficient, tending to caus...Silicon Carbide (SiC) wafers have been widely used in micro- and nano-devices due to their excellent optical and material properties. However, polishing SiC wafers has been challenging and inefficient, tending to cause significant surface crack and subsurface damage. This work proposed modifying SiC surface properties by ion implantation to improve machining efficiency, suppress surface crack, and reduce damage. High-energy ion implantation disrupted the SiC crystal lattice, reducing hardness and elastic modulus while increasing brittle-ductile transition depth, thus changing the removal mode from brittle fracture to plastic removal. Theoretical models of material removal rate and surface roughness were established for abrasive polishing of the SiC wafers. Polishing experiments were conducted on ion-implanted, modified SiC samples. The improvement mechanisms of ion implantation on surface damage, removal rate, morphology, and residual stress were investigated. The effect of ion implantation on the polished surface quality of SiC was investigated through orthogonal experiments. The results showed that ion implantation can significantly improve the average material removal rate of the SiC samples. Additionally, the ion-implanted samples had exhibited remarkable reductions in surface roughness, surface damage, and tensile residual stress.展开更多
基金support from the China Postdoctoral Science Foundation(No.2023M742735)the Postdoctoral Fellowship Program of CPSF,China(No.GZC20232029)+5 种基金the National Natural Science Foundation of China(No.52475530)the Shaanxi Postdoctoral Science Foundation,China(No.2023BSHEDZZ175)the Innovation Capability Support Program of Shaanxi Province,China(No.2021TD-23)the Key Industrial Chain Core Technology Research Project in Xi’an,China(No.23LLRH0029)the Natural Science Basic Research Program of Shaanxi,China(No.2024JC-YBQN-0490)the Fundamental Research Funds for the Central Universities,China(No.ZYTS24023).
文摘Silicon Carbide (SiC) wafers have been widely used in micro- and nano-devices due to their excellent optical and material properties. However, polishing SiC wafers has been challenging and inefficient, tending to cause significant surface crack and subsurface damage. This work proposed modifying SiC surface properties by ion implantation to improve machining efficiency, suppress surface crack, and reduce damage. High-energy ion implantation disrupted the SiC crystal lattice, reducing hardness and elastic modulus while increasing brittle-ductile transition depth, thus changing the removal mode from brittle fracture to plastic removal. Theoretical models of material removal rate and surface roughness were established for abrasive polishing of the SiC wafers. Polishing experiments were conducted on ion-implanted, modified SiC samples. The improvement mechanisms of ion implantation on surface damage, removal rate, morphology, and residual stress were investigated. The effect of ion implantation on the polished surface quality of SiC was investigated through orthogonal experiments. The results showed that ion implantation can significantly improve the average material removal rate of the SiC samples. Additionally, the ion-implanted samples had exhibited remarkable reductions in surface roughness, surface damage, and tensile residual stress.
