Ultrathin high-k dielectric ErAlO films were deposited on Si(100)substrates by using radio-frequency magnetron sputtering.The very flat surface of the annealed film with a rms roughness less than 0.25 nm was observed ...Ultrathin high-k dielectric ErAlO films were deposited on Si(100)substrates by using radio-frequency magnetron sputtering.The very flat surface of the annealed film with a rms roughness less than 0.25 nm was observed by using an atomic force microscope.The film shows good thermal stability when annealing at 900℃ for 30 s in the O_(2) ambient.The effective dielectric constant of the film is around 15.2,and a low leakage current of 8.4×10^(-5) A/cm^(2) at an electric field of 1 MV/cm was achieved for the film with the equivalent oxide thickness of 2.0 nm after annealing.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 60806031 and 11004130the Natural Science Foundation of Zhejiang Province under Grant No Y6100596.
文摘Ultrathin high-k dielectric ErAlO films were deposited on Si(100)substrates by using radio-frequency magnetron sputtering.The very flat surface of the annealed film with a rms roughness less than 0.25 nm was observed by using an atomic force microscope.The film shows good thermal stability when annealing at 900℃ for 30 s in the O_(2) ambient.The effective dielectric constant of the film is around 15.2,and a low leakage current of 8.4×10^(-5) A/cm^(2) at an electric field of 1 MV/cm was achieved for the film with the equivalent oxide thickness of 2.0 nm after annealing.
