The broadband, narrow width, rectangular dielectric resonator antenna(RDRA) of aluminum nitride(εr=8.6) was designed and the effect of inclusion of air gap at the bottom of the dielectric resonator antenna(DRA),above...The broadband, narrow width, rectangular dielectric resonator antenna(RDRA) of aluminum nitride(εr=8.6) was designed and the effect of inclusion of air gap at the bottom of the dielectric resonator antenna(DRA),above the ground plane, was investigated. Gain around 7 dBi was obtained for DRA with air gap(DRAAG) over a broad bandwidth in upper X, Ku, and K bands. Further enhancement in gain could be obtained by placing a metal wall parallel to the length of DRA. However, due to the presence of metal wall, bandwidth was reduced. These structures with the metal wall are capable of operating over a wide band extending from Ku band to lower K band with the gain of around 10 dBi. CST Microwave Studio Software was used to simulate all these structures.Performance parameters of DRA with air gap were compared with several broadband DRA structures reported in recent literature. The proposed DRAAG with the metal wall in this paper is capable of operating over a wide bandwidth along with a significant gain.展开更多
Heterojunction Bipolar Transistors with SiGe base and Si emitter and collector have increasingly become important in high speed applications in electronics due to better performance of these devices with a modest incr...Heterojunction Bipolar Transistors with SiGe base and Si emitter and collector have increasingly become important in high speed applications in electronics due to better performance of these devices with a modest increase in complexity of fabrication process. Speed of these devices is mainly determined by transit time of minority carriers across the device. Base transit time is the most important component of the total transit time. An analytical model is developed here to predict the variation of base transit time with Ge content, base doping concentration, temperature, and other device parameters. Studies have been made for both uniform and exponential doping distributions with different Ge profiles in the base region. Band gap narrowing effect due to high doping concentration is also taken into account in the model.展开更多
An analytical model is used to predict the effects of surface recombination current on the gain and transit time of GalnP/GaAs heterojunction bipolar transistors（HBTs）.The present analysis shows that consideration o...An analytical model is used to predict the effects of surface recombination current on the gain and transit time of GalnP/GaAs heterojunction bipolar transistors（HBTs）.The present analysis shows that consideration of the recombination current gives current gain values that are comparable to those of the experimental results.The dependence of current gain on temperature,base doping and emitter area are also analyzed,and the variation in collector current with emitter-base voltage,temperature and doping is considered.展开更多
文摘The broadband, narrow width, rectangular dielectric resonator antenna(RDRA) of aluminum nitride(εr=8.6) was designed and the effect of inclusion of air gap at the bottom of the dielectric resonator antenna(DRA),above the ground plane, was investigated. Gain around 7 dBi was obtained for DRA with air gap(DRAAG) over a broad bandwidth in upper X, Ku, and K bands. Further enhancement in gain could be obtained by placing a metal wall parallel to the length of DRA. However, due to the presence of metal wall, bandwidth was reduced. These structures with the metal wall are capable of operating over a wide band extending from Ku band to lower K band with the gain of around 10 dBi. CST Microwave Studio Software was used to simulate all these structures.Performance parameters of DRA with air gap were compared with several broadband DRA structures reported in recent literature. The proposed DRAAG with the metal wall in this paper is capable of operating over a wide bandwidth along with a significant gain.
文摘Heterojunction Bipolar Transistors with SiGe base and Si emitter and collector have increasingly become important in high speed applications in electronics due to better performance of these devices with a modest increase in complexity of fabrication process. Speed of these devices is mainly determined by transit time of minority carriers across the device. Base transit time is the most important component of the total transit time. An analytical model is developed here to predict the variation of base transit time with Ge content, base doping concentration, temperature, and other device parameters. Studies have been made for both uniform and exponential doping distributions with different Ge profiles in the base region. Band gap narrowing effect due to high doping concentration is also taken into account in the model.
文摘An analytical model is used to predict the effects of surface recombination current on the gain and transit time of GalnP/GaAs heterojunction bipolar transistors（HBTs）.The present analysis shows that consideration of the recombination current gives current gain values that are comparable to those of the experimental results.The dependence of current gain on temperature,base doping and emitter area are also analyzed,and the variation in collector current with emitter-base voltage,temperature and doping is considered.
