This study presents the classification and prediction of severity for brittle rock failure,focusing on failure behaviors and excessive determination based on damage depth.The research utilizes extensive field survey d...This study presents the classification and prediction of severity for brittle rock failure,focusing on failure behaviors and excessive determination based on damage depth.The research utilizes extensive field survey data from the Shuangjiangkou Hydropower Station and previous research findings.Based on field surveys and previous studies,four types of brittle rock failure with different failure mechanisms are classified,and then a prediction method is proposed.This method incorporates two variables,i.e.Kv(modified rock mass integrity coefficient)and GSI(geological strength index).The prediction method is applied to the first layer excavation of the powerhouse cavern of Shuangjiangkou Hydropower Station.The results show that the predicted brittle rock failure area agrees with the actual failure area,demonstrating the method’s applicability.Next,it extends to investigate brittle rock failure in two locations.The first is the k0-890 m section of the traffic cavern,and the second one is at K0-64 m of the main powerhouse.The criterion-based prediction indicates a severity brittle rock failure in the K0-890 m section,and a moderate brittle rock failure in the K0-64 m section,which agrees with the actual occurrence of brittle rock failure in the field.The understanding and application of the prediction method using Kv and GSI are vital for implementing a comprehensive brittle rock failure prediction process in geological engineering.To validate the adaptability of this criterion across diverse tunnel projects,a rigorous verification process using statistical findings was conducted.The assessment outcomes demonstrate high accuracy for various tunnel projects,allowing establishment of the correlations that enable valuable conclusions regarding brittle rock failure occurrence.Further validation and refinement through field and laboratory testing,as well as simulations,can broaden the contribution of this method to safer and more resilient underground construction.展开更多
The scalable growth of wafer-sized single-crystal graphene in an energy-efficient manner and compatible with wafer process is critical for the killer applications of graphene in high-performance electronics and optoel...The scalable growth of wafer-sized single-crystal graphene in an energy-efficient manner and compatible with wafer process is critical for the killer applications of graphene in high-performance electronics and optoelectronics. Here, ultrafast epitaxial growth of single-crystal graphene wafers is realized on singlecrystal Cu90Ni10(1 1 1) thin films fabricated by a tailored two-step magnetron sputtering and recrystallization process. The minor nickel(Ni) content greatly enhances the catalytic activity of Cu, rendering the growth of a 4 in. single-crystal monolayer graphene wafer in 10 min on Cu90Ni10(1 1 1), 50 folds faster than graphene growth on Cu(1 1 1). Through the carbon isotope labeling experiments, graphene growth on Cu90Ni10(1 1 1) is proved to be exclusively surface-reaction dominated, which is ascribed to the Cu surface enrichment in the Cu Ni alloy, as indicated by element in-depth profile. One of the best benefits of our protocol is the compatibility with wafer process and excellent scalability. A pilot-scale chemical vapor deposition(CVD) system is designed and built for the mass production of single-crystal graphene wafers, with productivity of 25 pieces in one process cycle. Furthermore, we demonstrate the application of single-crystal graphene in electrically controlled liquid-crystal microlens arrays(LCMLA), which exhibit highly tunable focal lengths near 2 mm under small driving voltages. By integration of the graphene based LCMLA and a CMOS sensor, a prototype camera is proposed that is available for simultaneous light-field and light intensity imaging. The single-crystal graphene wafers could hold great promising for highperformance electronics and optoelectronics that are compatible with wafer process.展开更多
Manipulating the polarization of light at the nanoscale is essential for the development of nano-optical devices. Owing to its corrugated honeycomb structure, two-dimensional （2D） layered black phosphorus （BP） exh...Manipulating the polarization of light at the nanoscale is essential for the development of nano-optical devices. Owing to its corrugated honeycomb structure, two-dimensional （2D） layered black phosphorus （BP） exhibits outstanding in-plane optical anisotropy with distinct linear dichroism and optical birefringence in the visible region, which are superior characteristics for ultrathin polarizing optics. Herein, taking advantage of polarized Raman spectroscopy, we demonstrate that layered BP with a nanometer thickness can remarkably alter the polarization state of a linearly-polarized laser and behave as an ultrathin optical polarization element in a BP-Bi2Se3 stacking structure by inducing the exceptionally polarized Raman scattering of isotropic Bi2Se3. Our findings provide a promising alternative for designing novel polarization optics based on 2D anisotropic materials, which can be easily integrated in micro- sized all-optical and optoelectronic devices.展开更多
Due to the complex geological processes of Qinghai-Tibet Plateau,numerous deposits,especially the large-scale ancient landslide deposits,are characteristic features of the valleys incised in southwestern China.Intense...Due to the complex geological processes of Qinghai-Tibet Plateau,numerous deposits,especially the large-scale ancient landslide deposits,are characteristic features of the valleys incised in southwestern China.Intense water level fluctuations since 2011 in Maoergai Reservoir,China,registered the reactivation of Xierguazi ancient landslide,and presented a significant risk to neighboring facilities.Based on detailed field survey and drilling exploration,the landslide was divided into Zone A and Zone B,and other characterizations of landslide were studied as well.To precisely measure the extent of landslide displacement during filling and drawdown stage,surface displacement monitoring system was deployed on the landslide.The monitoring analyses data reveal that reservoir fluctuation is the dominant factor influencing landslide displacement,especially during drawdown stage.Moreover,a future sliding is anticipated in Zone A,while a creep had already existed in Zone B.A reservoir regulation was then established using the lead-lag correlation between reservoir fluctuation and landslide displacement and landslide stability analysis.In the end,the follow-up deformation monitoring demonstrates that the reservoir regulation controlled the landslide effectively.Landslide control by reservoir regulation in Maoergai can serve as a case study for other settlements involved in similar construction activities.展开更多
Anisotropic two-dimensional (2D) materials exhibit lattice-orientation dependent optical and electrical properties. Carriers doping of such materials has been used to modulate their energy band structures for opto-ele...Anisotropic two-dimensional (2D) materials exhibit lattice-orientation dependent optical and electrical properties. Carriers doping of such materials has been used to modulate their energy band structures for opto-electronic applications. Herein, we show that by stacking monolayer rhenium disulfide (ReS2) on a flat gold film, the electrons doping in ReS2 can affect the in-plane anisotropic Raman enhancement of molecules adsorbed on ReS2. The change of enhancement factor and the degree of anisotropy in enhancement with layer number are sensitively dependent on the doping level of ReS2 by gold, which is further confirmed by Kelvin probe force microscopy (KPFM) measurements. These findings could open an avenue for probing anisotropic electronic interactions between molecules and 2D materials with low symmetry using Raman enhancement effect.展开更多
Van der Waals heterojunctions are fast-emerging quantum structures fabricated by the controlled stacking of two-dimensional(2D)materials.Owing to the atomically thin thickness,their carrier properties are not only det...Van der Waals heterojunctions are fast-emerging quantum structures fabricated by the controlled stacking of two-dimensional(2D)materials.Owing to the atomically thin thickness,their carrier properties are not only determined by the host material itself,but also defined by the interlayer interactions,including dielectric environment,charge trapping centers,and stacking angles.The abundant constituents without the limitation of lattice constant matching enable fascinating electrical,optical,and magnetic properties in van der Waals heterojunctions toward next-generation devices in photonics,optoelectronics,and information sciences.This review focuses on the charge and energy transfer processes and their dynamics in transition metal dichalcogenides(TMDCs),a family of quantum materials with strong excitonic effects and unique valley properties,and other related 2D materials such as graphene and hexagonalboron nitride.In the first part,we summarize the ultrafast charge transfer processes in van der Waals heterojunctions,including its experimental evidence and theoretical understanding,the interlayer excitons at the TMDC interfaces,and the hot carrier injection at the graphene/TMDCs interface.In the second part,the energy transfer,including both Förster and Dexter types,are reviewed from both experimental and theoretical perspectives.Finally,we highlight the typical charge and energy transfer applications in photodetectors and summarize the challenges and opportunities for future development in this field.展开更多
The variation of interlayer coupling can greatly affect the bandstructure of few layered transition metal dichalcogenides(TMDs),for instance,transition of indirect-to-direct bandgap and vice versa,which is correlated ...The variation of interlayer coupling can greatly affect the bandstructure of few layered transition metal dichalcogenides(TMDs),for instance,transition of indirect-to-direct bandgap and vice versa,which is correlated with the charge carrier and optical density.However,methods that can modulate the coupling strength in a controllable way are still lacking.Here,we report a fluidic dynamic strategy to tune the interlayer coupling of folded bi-layer MoS_(2).By controlling the flow direction and particle size of the fluid,mono-layer MoS_(2)can be folded into bi-layer with a controlled folding direction for designated twist angles as well as tunable interlayer coupling.Compared with normally folded bi-layer MoS_(2),the photoluminescence(PL)peak of the direct-bandgap transition for folded bi-layer MoS_(2)by fluid flow is weakened accompanied with the re-appearance of indirect-bandgap transition peak.Besides,the fluid flow creates a clear trajectory on the folded MoS_(2),exhibiting various degrees of interlayer coupling along it.Field-effect transistors(FETs)were further fabricated on tunably coupled folded-bi-layers,proving that the bandstructure and electrical property is strongly correlated with the degree of interlayer coupling.This fluidic dynamic strategy can be extended to other TMDs on any substrate,and together with its excellent capability in controlled interlayer coupling,it will provide a new way for the development of TMDs optoelectronics.展开更多
Bilayer graphene provides a versatile platform for exploring a variety of intriguing phenomena and shows much promise for applications in electronics,optoelectronics,etc.Controlled growth of large-area bilayer graphen...Bilayer graphene provides a versatile platform for exploring a variety of intriguing phenomena and shows much promise for applications in electronics,optoelectronics,etc.Controlled growth of large-area bilayer graphene is therefore highly desired yet still suffers from a slow growth rate and poor layer uniformity.Meanwhile,graphene wrinkles,including folds and ripples,form during cooling due to the thermal contraction mismatch between graphene and the metal substrates,and have been far from suppressed or eliminated,especially in bilayer graphene,which would greatly degrade the extraordinary properties of graphene.Here we report the ultrafast growth of wafer-scale fold-free bilayer graphene by chemical vapor deposition.Through well-tuning the alloy thickness and strain regulation of the single-crystal CuNi(111)/sapphire,the full coverage of a 2-inch fold-free bilayer graphene wafer via mainly isothermal segregation has been achieved as fast as 30 s.The tensile-strained CuNi(111)film reduces the thermal contraction mismatch and suppresses the formation of graphene folds during cooling,which is directly observed through in situ optical microscopy.The ultraflat bilayer graphene exhibits wafer-scale uniformity in electrical performance and enhanced mechanical property comparable to the exfoliated ones.Our results offer a promising route for largescale production of bilayer graphene and enable its various applications.展开更多
基金the National Natural Science Foundation of China(Nos.41825018,42141009)the Second Tibetan Plateau Scientific Expedition and Research Program(STEP)(No.2019QZKK0904).
文摘This study presents the classification and prediction of severity for brittle rock failure,focusing on failure behaviors and excessive determination based on damage depth.The research utilizes extensive field survey data from the Shuangjiangkou Hydropower Station and previous research findings.Based on field surveys and previous studies,four types of brittle rock failure with different failure mechanisms are classified,and then a prediction method is proposed.This method incorporates two variables,i.e.Kv(modified rock mass integrity coefficient)and GSI(geological strength index).The prediction method is applied to the first layer excavation of the powerhouse cavern of Shuangjiangkou Hydropower Station.The results show that the predicted brittle rock failure area agrees with the actual failure area,demonstrating the method’s applicability.Next,it extends to investigate brittle rock failure in two locations.The first is the k0-890 m section of the traffic cavern,and the second one is at K0-64 m of the main powerhouse.The criterion-based prediction indicates a severity brittle rock failure in the K0-890 m section,and a moderate brittle rock failure in the K0-64 m section,which agrees with the actual occurrence of brittle rock failure in the field.The understanding and application of the prediction method using Kv and GSI are vital for implementing a comprehensive brittle rock failure prediction process in geological engineering.To validate the adaptability of this criterion across diverse tunnel projects,a rigorous verification process using statistical findings was conducted.The assessment outcomes demonstrate high accuracy for various tunnel projects,allowing establishment of the correlations that enable valuable conclusions regarding brittle rock failure occurrence.Further validation and refinement through field and laboratory testing,as well as simulations,can broaden the contribution of this method to safer and more resilient underground construction.
基金supported by the National Basic Research Program of China(2016YFA0200101 and 2014CB932500)the National Natural Science Foundation of China(21525310,51432002,51520105003,61432007,and 61176052)Beijing Municipal Science&Technology Commission(Z161100002116021 and Z181100004818001)
文摘The scalable growth of wafer-sized single-crystal graphene in an energy-efficient manner and compatible with wafer process is critical for the killer applications of graphene in high-performance electronics and optoelectronics. Here, ultrafast epitaxial growth of single-crystal graphene wafers is realized on singlecrystal Cu90Ni10(1 1 1) thin films fabricated by a tailored two-step magnetron sputtering and recrystallization process. The minor nickel(Ni) content greatly enhances the catalytic activity of Cu, rendering the growth of a 4 in. single-crystal monolayer graphene wafer in 10 min on Cu90Ni10(1 1 1), 50 folds faster than graphene growth on Cu(1 1 1). Through the carbon isotope labeling experiments, graphene growth on Cu90Ni10(1 1 1) is proved to be exclusively surface-reaction dominated, which is ascribed to the Cu surface enrichment in the Cu Ni alloy, as indicated by element in-depth profile. One of the best benefits of our protocol is the compatibility with wafer process and excellent scalability. A pilot-scale chemical vapor deposition(CVD) system is designed and built for the mass production of single-crystal graphene wafers, with productivity of 25 pieces in one process cycle. Furthermore, we demonstrate the application of single-crystal graphene in electrically controlled liquid-crystal microlens arrays(LCMLA), which exhibit highly tunable focal lengths near 2 mm under small driving voltages. By integration of the graphene based LCMLA and a CMOS sensor, a prototype camera is proposed that is available for simultaneous light-field and light intensity imaging. The single-crystal graphene wafers could hold great promising for highperformance electronics and optoelectronics that are compatible with wafer process.
文摘Manipulating the polarization of light at the nanoscale is essential for the development of nano-optical devices. Owing to its corrugated honeycomb structure, two-dimensional （2D） layered black phosphorus （BP） exhibits outstanding in-plane optical anisotropy with distinct linear dichroism and optical birefringence in the visible region, which are superior characteristics for ultrathin polarizing optics. Herein, taking advantage of polarized Raman spectroscopy, we demonstrate that layered BP with a nanometer thickness can remarkably alter the polarization state of a linearly-polarized laser and behave as an ultrathin optical polarization element in a BP-Bi2Se3 stacking structure by inducing the exceptionally polarized Raman scattering of isotropic Bi2Se3. Our findings provide a promising alternative for designing novel polarization optics based on 2D anisotropic materials, which can be easily integrated in micro- sized all-optical and optoelectronic devices.
基金the National Natural Science Foundation of China(No.41807292)the Opening Fund of the State Key Laboratory of Geohazard Prevention and Geoenvironment Protection(Chengdu University of Technology)(Nos.SKLGP2017K001,SKLGP2018K003)。
文摘Due to the complex geological processes of Qinghai-Tibet Plateau,numerous deposits,especially the large-scale ancient landslide deposits,are characteristic features of the valleys incised in southwestern China.Intense water level fluctuations since 2011 in Maoergai Reservoir,China,registered the reactivation of Xierguazi ancient landslide,and presented a significant risk to neighboring facilities.Based on detailed field survey and drilling exploration,the landslide was divided into Zone A and Zone B,and other characterizations of landslide were studied as well.To precisely measure the extent of landslide displacement during filling and drawdown stage,surface displacement monitoring system was deployed on the landslide.The monitoring analyses data reveal that reservoir fluctuation is the dominant factor influencing landslide displacement,especially during drawdown stage.Moreover,a future sliding is anticipated in Zone A,while a creep had already existed in Zone B.A reservoir regulation was then established using the lead-lag correlation between reservoir fluctuation and landslide displacement and landslide stability analysis.In the end,the follow-up deformation monitoring demonstrates that the reservoir regulation controlled the landslide effectively.Landslide control by reservoir regulation in Maoergai can serve as a case study for other settlements involved in similar construction activities.
基金National Natural Science Foundation of China (Nos. 51432002, 51720105003, 21790052, 11374355 and 21573004)the Ministry of Science and Technology of China (Nos. 2016YFA0200100 and 2015CB932400)the Beijing Municipal Science and Technology Project (No. Z161100002116026).
文摘Anisotropic two-dimensional (2D) materials exhibit lattice-orientation dependent optical and electrical properties. Carriers doping of such materials has been used to modulate their energy band structures for opto-electronic applications. Herein, we show that by stacking monolayer rhenium disulfide (ReS2) on a flat gold film, the electrons doping in ReS2 can affect the in-plane anisotropic Raman enhancement of molecules adsorbed on ReS2. The change of enhancement factor and the degree of anisotropy in enhancement with layer number are sensitively dependent on the doping level of ReS2 by gold, which is further confirmed by Kelvin probe force microscopy (KPFM) measurements. These findings could open an avenue for probing anisotropic electronic interactions between molecules and 2D materials with low symmetry using Raman enhancement effect.
基金Agency for Science,Technology and Research,Grant/Award Number:1527300025Central University Basic Research Fund of China,Grant/Award Numbers:020514380231,021014380177+5 种基金National Natural Science Foundation of China,Grant/Award Numbers:12104006,21873048,92056204National Research Foundation,Grant/Award Number:NRFNRFI2016-08Natural Science Foundation of Jiangsu Province,Grant/Award Number:BK20180319Start up fundations from Anhui UniversityTsinghua UniversityState Key Laboratory of Low-Dimensional Quantum Physics。
文摘Van der Waals heterojunctions are fast-emerging quantum structures fabricated by the controlled stacking of two-dimensional(2D)materials.Owing to the atomically thin thickness,their carrier properties are not only determined by the host material itself,but also defined by the interlayer interactions,including dielectric environment,charge trapping centers,and stacking angles.The abundant constituents without the limitation of lattice constant matching enable fascinating electrical,optical,and magnetic properties in van der Waals heterojunctions toward next-generation devices in photonics,optoelectronics,and information sciences.This review focuses on the charge and energy transfer processes and their dynamics in transition metal dichalcogenides(TMDCs),a family of quantum materials with strong excitonic effects and unique valley properties,and other related 2D materials such as graphene and hexagonalboron nitride.In the first part,we summarize the ultrafast charge transfer processes in van der Waals heterojunctions,including its experimental evidence and theoretical understanding,the interlayer excitons at the TMDC interfaces,and the hot carrier injection at the graphene/TMDCs interface.In the second part,the energy transfer,including both Förster and Dexter types,are reviewed from both experimental and theoretical perspectives.Finally,we highlight the typical charge and energy transfer applications in photodetectors and summarize the challenges and opportunities for future development in this field.
基金National Natural Science Foundation of China(Nos.21903007 and 22072006)Young Thousand Talents Program(No.110532103)+2 种基金Beijing Normal University Startup funding(No.312232102)the Fundamental Research Funds for the Central Universities(No.310421109)Double First Class General Science and Technology Projects from School of Chemistry and Chemical Engineering,Shihezi University(No.SHYL-YB201903).
文摘The variation of interlayer coupling can greatly affect the bandstructure of few layered transition metal dichalcogenides(TMDs),for instance,transition of indirect-to-direct bandgap and vice versa,which is correlated with the charge carrier and optical density.However,methods that can modulate the coupling strength in a controllable way are still lacking.Here,we report a fluidic dynamic strategy to tune the interlayer coupling of folded bi-layer MoS_(2).By controlling the flow direction and particle size of the fluid,mono-layer MoS_(2)can be folded into bi-layer with a controlled folding direction for designated twist angles as well as tunable interlayer coupling.Compared with normally folded bi-layer MoS_(2),the photoluminescence(PL)peak of the direct-bandgap transition for folded bi-layer MoS_(2)by fluid flow is weakened accompanied with the re-appearance of indirect-bandgap transition peak.Besides,the fluid flow creates a clear trajectory on the folded MoS_(2),exhibiting various degrees of interlayer coupling along it.Field-effect transistors(FETs)were further fabricated on tunably coupled folded-bi-layers,proving that the bandstructure and electrical property is strongly correlated with the degree of interlayer coupling.This fluidic dynamic strategy can be extended to other TMDs on any substrate,and together with its excellent capability in controlled interlayer coupling,it will provide a new way for the development of TMDs optoelectronics.
基金This work was supported by the National Natural Science Foundation of China(Nos.52021006,T2188101,and 22105009)Beijing National Laboratory for Molecular Sciences(No.BNLMSCXTD-202001)+1 种基金the Tencent Foundation(No.XPLORER PRIZE)We acknowledge Molecular Materials and Nanofabrication Laboratory(MMNL)in the College of Chemistry at Peking University for the use of instruments.
文摘Bilayer graphene provides a versatile platform for exploring a variety of intriguing phenomena and shows much promise for applications in electronics,optoelectronics,etc.Controlled growth of large-area bilayer graphene is therefore highly desired yet still suffers from a slow growth rate and poor layer uniformity.Meanwhile,graphene wrinkles,including folds and ripples,form during cooling due to the thermal contraction mismatch between graphene and the metal substrates,and have been far from suppressed or eliminated,especially in bilayer graphene,which would greatly degrade the extraordinary properties of graphene.Here we report the ultrafast growth of wafer-scale fold-free bilayer graphene by chemical vapor deposition.Through well-tuning the alloy thickness and strain regulation of the single-crystal CuNi(111)/sapphire,the full coverage of a 2-inch fold-free bilayer graphene wafer via mainly isothermal segregation has been achieved as fast as 30 s.The tensile-strained CuNi(111)film reduces the thermal contraction mismatch and suppresses the formation of graphene folds during cooling,which is directly observed through in situ optical microscopy.The ultraflat bilayer graphene exhibits wafer-scale uniformity in electrical performance and enhanced mechanical property comparable to the exfoliated ones.Our results offer a promising route for largescale production of bilayer graphene and enable its various applications.
