This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojun...This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas(2DEG)at the interface quantum well,as verified using a metal−insulator−semiconductor(MIS)device.Although the 2DEG indeed contributes to a higher mobility than the monolayer channel,the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect,originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well.Benefited from the proper energy-band engineering,a high mobility of 84.3 cm2·V^(−1)·s^(−1),a decent threshold voltage(V_(th))of−6.5 V,and a steep subthreshold swing(SS)of 0.29 V/dec were obtained in InZnO-based heterojunction TFT.展开更多
As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this w...As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.展开更多
This work reports on the integration of organic and inorganic semiconductors as heterojunction active layers for high-performance ambipolar transistors and complementary metal-oxide-semiconductor(CMOS)-like inverters....This work reports on the integration of organic and inorganic semiconductors as heterojunction active layers for high-performance ambipolar transistors and complementary metal-oxide-semiconductor(CMOS)-like inverters.Pentacene is employed as a p-type organic semiconductor for its stable electrical performance,while the solution-processed scandium(Sc)substituted indium oxide(ScInO)is employed as an n-type inorganic semiconductor.It is observed that by regulating the doping concentration of Sc,the electrical performance of the n-type semiconductor could be well controlled to obtain a balance with the electrical performance of the p-type semiconductor,which is vital for achieving high-performance inverters.When the doping concentration of Sc is 10 at.%,the CMOS-like logic inverters exhibit a voltage gain larger than 80 and a wide noise margin(53%of the theoretical value).The inverters also respond well to the input signal with frequency up to 500 Hz.展开更多
With the rapid development of the Internet of Things(IoTs),wearable sensors are playing an increasingly important role in daily monitoring of personal health and wellness.The signal-to-noise-ratio has become the most ...With the rapid development of the Internet of Things(IoTs),wearable sensors are playing an increasingly important role in daily monitoring of personal health and wellness.The signal-to-noise-ratio has become the most critical performance factor to consider.To enhance it,on the one hand,good sensing materials/devices have been employed;on the other hand,signal amplification and noise reduction circuits have been used.However,most of these devices and circuits work in an active sampling mode,requiring frequent data acquisition and hence,entailing high-power consumption.In this scenario,a flexible and wearable event-triggered sensor with embedded signal amplification without an external power supply is of great interest.Here,we report a flexible two-terminal piezotronic n-p-n bipolar junction transistor(PBJT)that acts as an autonomous and highly sensitive,current-and/or voltage-mediated pressure sensor.The PBJT is formed by two back-to-back piezotronic diodes which are defined as emitter-base and collectorbase diodes.Upon force exertion on the emitter side,as a result of the piezoelectric effect,the emitter-base diode is forward biased while the collector-base diode is reverse biased.Due to the inherent BJT amplification effect,the PBJT achieves record-high sensitivities of 139.7 kPa^(-1)(current-based)and 88.66 kPa^(-1)(voltage-based)in sensing mode.The PBJT also has a fast response time of<110 ms under exertion of dynamic stimuli ranging from a flying butterfly to a gentle finger touch.Therefore,the PBJT advances the state of the art not only in terms of sensitivity but also in regard to being self-driven and autonomous,making it promising for pressure sensing and other IoT applications.展开更多
In this review, the principle and the optical methods for light-field display are introduced. The light-field display is divided into three categories, including the layer-based method, projector-based method, and int...In this review, the principle and the optical methods for light-field display are introduced. The light-field display is divided into three categories, including the layer-based method, projector-based method, and integral imaging method. The principle, characteristic, history, and advanced research results of each method are also reviewed.The advantages of light-field display are discussed by comparing it with other display technologies including binocular stereoscopic display, volumetric three-dimensional display, and holographic display.展开更多
We demonstrate a rechargeable zinc-ion battery with high energy density and cyclability using MnO_(2)and reduced graphene oxide(MnO_(2)/rGO)electrode.The flexible and binder free electrode,with high MnO_(2)mass ratio(...We demonstrate a rechargeable zinc-ion battery with high energy density and cyclability using MnO_(2)and reduced graphene oxide(MnO_(2)/rGO)electrode.The flexible and binder free electrode,with high MnO_(2)mass ratio(80 wt%of MnO_(2)),is fabricated using vacuum filtration without any additional additives other than rGO.Compared to batteries with conventional MnO_(2)electrodes,the Zn-MnO_(2)/rGO battery shows a significant enhanced capacity(332.2 mAh g^(-1)at 0.3 A g^(-1)),improved rate capability(172.3 mAh g^(-1)at 6 A g^(-1))and cyclability.The capacity retention remains 96%after 500 charge/discharge cycles at 6 A g^(-1).The high MnO_(2)mass ratio makes MnO_(2)/rGO electrode advantageous when the capacity is normalized to the whole electrode,particularly at high rates.The calculated gravimetric energy density of Zn-MnO_(2)/rGO battery is 33.17Wh kg^(-1),which is comparable to the existing commercial lead-acid batteries(30-40Wh kg^(-1)).Furthermore,the discharge profile and capacity of our Zn-MnO_(2)/rGO battery shows no deterioration during bending test,indicating good flexibility.As a result,zinc-ion battery is believed to be a promising technology for powering next generation flexible electronics.展开更多
The advancement of Internet of Things has stimulated huge demands on low-voltage flexible electronics.Carbon-nanotube(CNT)-based electronics are of great promise to this end for their intrinsic flexibility,high carrie...The advancement of Internet of Things has stimulated huge demands on low-voltage flexible electronics.Carbon-nanotube(CNT)-based electronics are of great promise to this end for their intrinsic flexibility,high carrier mobility,and capability to synthesize as semiconducting or metallic to serve as the channels,electrodes,and interconnects of circuits.However,the gate dielectric often has to adopt brittle oxides,which can seriously limit the device flexibility.Herein,we show that a hybrid polyimide-Al2O3 material can serve as a good gate dielectric to realize truly intrinsic flexibility of transistors and circuits based on CNTs.With this hybrid dielectric,high-performance all-CNT transistors and integrated circuits of inverters,ring oscillators,and logic gates are demonstrated.Particularly,the inverters exhibit a remarkably high gain of 342.5 and can be used as an analog amplifier for millivolt small signals.Ultralow voltage(50 mV)operation is also feasible,which highlights the great promise for low-power applications.展开更多
基金supported by National Key Research and Development Program(2021YFB3600802)Shenzhen Municipal Scientific Program(JSGG20220831103803007,SGDX20211123145404006)Guangdong Basic and Applied Basic Research Foundation(2022A1515110029)
文摘This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas(2DEG)at the interface quantum well,as verified using a metal−insulator−semiconductor(MIS)device.Although the 2DEG indeed contributes to a higher mobility than the monolayer channel,the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect,originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well.Benefited from the proper energy-band engineering,a high mobility of 84.3 cm2·V^(−1)·s^(−1),a decent threshold voltage(V_(th))of−6.5 V,and a steep subthreshold swing(SS)of 0.29 V/dec were obtained in InZnO-based heterojunction TFT.
基金supported by National Key Research and Development Program under Grant No.2022YFB3607100Shenzhen Research Programs under Grant Nos.JCYJ20200109140601691,JCYJ20190808154803565,SGDX20201103095607022,SGDX20211123145404006,and GXWD20201231165807007-20200807025846001。
文摘As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574003 and 61774010)Shenzhen Municipal Scientific Program,China(Grant Nos.GGFW20170728163447038 and JCYJ20180504165449640).
文摘This work reports on the integration of organic and inorganic semiconductors as heterojunction active layers for high-performance ambipolar transistors and complementary metal-oxide-semiconductor(CMOS)-like inverters.Pentacene is employed as a p-type organic semiconductor for its stable electrical performance,while the solution-processed scandium(Sc)substituted indium oxide(ScInO)is employed as an n-type inorganic semiconductor.It is observed that by regulating the doping concentration of Sc,the electrical performance of the n-type semiconductor could be well controlled to obtain a balance with the electrical performance of the p-type semiconductor,which is vital for achieving high-performance inverters.When the doping concentration of Sc is 10 at.%,the CMOS-like logic inverters exhibit a voltage gain larger than 80 and a wide noise margin(53%of the theoretical value).The inverters also respond well to the input signal with frequency up to 500 Hz.
基金funded by the National Key R&D Program of China(2019YFA0706100)National Natural Science Foundation of China(61974006)+1 种基金the Guangdong Introducing Innovative and Enterpreneurial Teams Program(2019ZT08Z656)the Shenzhen Municipal Scientific Program(KJZD20230923113759002).
文摘With the rapid development of the Internet of Things(IoTs),wearable sensors are playing an increasingly important role in daily monitoring of personal health and wellness.The signal-to-noise-ratio has become the most critical performance factor to consider.To enhance it,on the one hand,good sensing materials/devices have been employed;on the other hand,signal amplification and noise reduction circuits have been used.However,most of these devices and circuits work in an active sampling mode,requiring frequent data acquisition and hence,entailing high-power consumption.In this scenario,a flexible and wearable event-triggered sensor with embedded signal amplification without an external power supply is of great interest.Here,we report a flexible two-terminal piezotronic n-p-n bipolar junction transistor(PBJT)that acts as an autonomous and highly sensitive,current-and/or voltage-mediated pressure sensor.The PBJT is formed by two back-to-back piezotronic diodes which are defined as emitter-base and collectorbase diodes.Upon force exertion on the emitter side,as a result of the piezoelectric effect,the emitter-base diode is forward biased while the collector-base diode is reverse biased.Due to the inherent BJT amplification effect,the PBJT achieves record-high sensitivities of 139.7 kPa^(-1)(current-based)and 88.66 kPa^(-1)(voltage-based)in sensing mode.The PBJT also has a fast response time of<110 ms under exertion of dynamic stimuli ranging from a flying butterfly to a gentle finger touch.Therefore,the PBJT advances the state of the art not only in terms of sensitivity but also in regard to being self-driven and autonomous,making it promising for pressure sensing and other IoT applications.
基金supported financially by the National Natural Science Foundation of China(Nos.61574003and 61774010)
文摘In this review, the principle and the optical methods for light-field display are introduced. The light-field display is divided into three categories, including the layer-based method, projector-based method, and integral imaging method. The principle, characteristic, history, and advanced research results of each method are also reviewed.The advantages of light-field display are discussed by comparing it with other display technologies including binocular stereoscopic display, volumetric three-dimensional display, and holographic display.
基金This work is supported by the China Postdoctoral Science Foundation funded project(2017M620517)the Shenzhen Science and Technology Innovation Committee(No.JCYJ20170818090257257,JCYJ20170412150411676 and JCYJ20160229122349365)The Hong Kong Polytechnic University(1-YW0Z)。
文摘We demonstrate a rechargeable zinc-ion battery with high energy density and cyclability using MnO_(2)and reduced graphene oxide(MnO_(2)/rGO)electrode.The flexible and binder free electrode,with high MnO_(2)mass ratio(80 wt%of MnO_(2)),is fabricated using vacuum filtration without any additional additives other than rGO.Compared to batteries with conventional MnO_(2)electrodes,the Zn-MnO_(2)/rGO battery shows a significant enhanced capacity(332.2 mAh g^(-1)at 0.3 A g^(-1)),improved rate capability(172.3 mAh g^(-1)at 6 A g^(-1))and cyclability.The capacity retention remains 96%after 500 charge/discharge cycles at 6 A g^(-1).The high MnO_(2)mass ratio makes MnO_(2)/rGO electrode advantageous when the capacity is normalized to the whole electrode,particularly at high rates.The calculated gravimetric energy density of Zn-MnO_(2)/rGO battery is 33.17Wh kg^(-1),which is comparable to the existing commercial lead-acid batteries(30-40Wh kg^(-1)).Furthermore,the discharge profile and capacity of our Zn-MnO_(2)/rGO battery shows no deterioration during bending test,indicating good flexibility.As a result,zinc-ion battery is believed to be a promising technology for powering next generation flexible electronics.
基金supported by National Natural Science Foundation of China (62074008,22175005 and 51961165105)Guangdong Basic and Applied Basic Research Foundation (2020B1515120039)+1 种基金Shenzhen Fundamental Research Program (GXWD20201231165807007-20200827122756001,JCYJ20180507181702150,JCYJ20200109110628172,and GXWD20201231165807007-20200802205241003)supported by State Key Laboratory of Nuclear Physics and Technology,Peking University under contract no.NPT2020KFJ20.
文摘The advancement of Internet of Things has stimulated huge demands on low-voltage flexible electronics.Carbon-nanotube(CNT)-based electronics are of great promise to this end for their intrinsic flexibility,high carrier mobility,and capability to synthesize as semiconducting or metallic to serve as the channels,electrodes,and interconnects of circuits.However,the gate dielectric often has to adopt brittle oxides,which can seriously limit the device flexibility.Herein,we show that a hybrid polyimide-Al2O3 material can serve as a good gate dielectric to realize truly intrinsic flexibility of transistors and circuits based on CNTs.With this hybrid dielectric,high-performance all-CNT transistors and integrated circuits of inverters,ring oscillators,and logic gates are demonstrated.Particularly,the inverters exhibit a remarkably high gain of 342.5 and can be used as an analog amplifier for millivolt small signals.Ultralow voltage(50 mV)operation is also feasible,which highlights the great promise for low-power applications.
