The electrical characteristics and microstructures ofβ-Ga_(2)O_(3) Schottky barrier diode(SBD)devices irradiated with swift heavy ions(2096 MeV Ta ions)have been studied.It was found thatβ-Ga_(2)O_(3) SBD devices sh...The electrical characteristics and microstructures ofβ-Ga_(2)O_(3) Schottky barrier diode(SBD)devices irradiated with swift heavy ions(2096 MeV Ta ions)have been studied.It was found thatβ-Ga_(2)O_(3) SBD devices showed the reliability degradation after irradiation,including turn-on voltage Von,on-resistance Ron,ideality factor n,and the reverse leakage current density Jr.In addition,the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5×10^(6)-1.3×10^(7)cm^(-1).Latent tracks induced by swift heavy ions were observed visually in the wholeβ-Ga2O3 matrix.Furthermore,crystal structure of tracks was amorphized completely.The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration.Eventually,these defects caused the degradation of electrical characteristics of the devices.In terms of the carrier removal rates,theβ-Ga_(2)O_(3) SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices.展开更多
Polycrystalline samples of La2Zr2O7 pyrochlore are irradiated by different energetic heavy ions to investigate the dependence of the vibrational mode variations on the irradiation parameters. The applied electronic en...Polycrystalline samples of La2Zr2O7 pyrochlore are irradiated by different energetic heavy ions to investigate the dependence of the vibrational mode variations on the irradiation parameters. The applied electronic energy loss(d E/dx)e increases from about 5.2 keV/nm to 39.6 keV/nm. The ion fluence ranges from 1× 10^11 ions/cm^2 to 6× 10^15 ions/cm^2.Vibrational modes of irradiated pyrochlore are analyzed by using Raman spectrum. Infrared active modes F1 uat 192, 308,and 651 cm^-1 appear in Raman spectra, and the F2 gband at 265 cm-1 rises up due to the irradiation by 200-MeV Kr ions with(d E/dx)e of 16.0 keV/nm. Differently, for the pyrochlore irradiated by 1750-MeV Bi ions with(d E/dx)e of 39.6 keV/nm, in spite of the appearance of infrared active mode F1 u651 cm^-1, the amorphous structure occurs according to the vibrational mode variations of pyrochlore irradiated at higher ion fluences. Amorphous tracks are observed in the samples, which confirm the occurrence of pyrochlore–amorphous transition in pyrochlore irradiated with(d E/dx)e of 39.6 keV/nm.展开更多
The various morphologies of tracks in MoS2 irradiated by swift heavy ions at normal and 30° incidence with 9.5–25.0 MeV/u 86Kr, 129Xe, 181Ta, and 209Bi ions were investigated by transmission electron microscopy....The various morphologies of tracks in MoS2 irradiated by swift heavy ions at normal and 30° incidence with 9.5–25.0 MeV/u 86Kr, 129Xe, 181Ta, and 209Bi ions were investigated by transmission electron microscopy. The diameter of ion tracks increases from 1.9 nm to 4.5 nm with increasing electronic energy loss. The energy loss threshold of the track formation in MoS2 is predicted as about 9.7 keV/nm based on the thermal spike model and it seems consistent with the experimental results. It is shown that the morphology of ion tracks is related to the penetration length of ions in MoS2. The formation process of ion tracks is discussed based on the cooperative process of outflow and recrystallization of the molten phase during rapid quenching.展开更多
Gallium nitride(GaN)-based devices have significant potential for space applications.However,the mechanisms of radiation damage to the device,particularly from strong ionizing radiation,remains unknown.This study inve...Gallium nitride(GaN)-based devices have significant potential for space applications.However,the mechanisms of radiation damage to the device,particularly from strong ionizing radiation,remains unknown.This study investigates the effects of radiation on p-gate AlGaN/GaN high-electron-mobility transistors(HEMTs).Under a high voltage,the HEMT leakage current increased sharply and was accompanied by a rapid increase in power density that caused"thermal burnout"of the devices.In addition,a burnout signature appeared on the surface of the burned devices,proving that a single-event burnout effect occurred.Additionally,degradation,including an increase in the on-resistance and a decrease in the breakdown voltage,was observed in devices irradiated with high-energy heavy ions and without bias.The latent tracks induced by heavy ions penetrated the heterojunction interface and extended into the GaN layer.Moreover,a new type of N_(2)bubble defect was discovered inside the tracks using Fresnel analysis.The accumulation of N_(2)bubbles in the heterojunction and buffer layers is more likely to cause leakage and failure.This study indicates that electrical stress accelerates the failure rate and that improving heat dissipation is an effective reinforcement method for GaN-based devices.展开更多
基金the National Natural Science Foundation of China(Grant Nos.12035019,11690041,and 12075290)China National Postdoctoral Program for Innovative Talents(Grant No.BX20200340)+1 种基金China Postdoctoral Science Foundation(Grant No.2020M673539)CAS"Light of West China"Program,and the Youth Innovation Promotion Association of Chinese Academy of Sciences(CAS)(Grant No.2020412).
文摘The electrical characteristics and microstructures ofβ-Ga_(2)O_(3) Schottky barrier diode(SBD)devices irradiated with swift heavy ions(2096 MeV Ta ions)have been studied.It was found thatβ-Ga_(2)O_(3) SBD devices showed the reliability degradation after irradiation,including turn-on voltage Von,on-resistance Ron,ideality factor n,and the reverse leakage current density Jr.In addition,the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5×10^(6)-1.3×10^(7)cm^(-1).Latent tracks induced by swift heavy ions were observed visually in the wholeβ-Ga2O3 matrix.Furthermore,crystal structure of tracks was amorphized completely.The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration.Eventually,these defects caused the degradation of electrical characteristics of the devices.In terms of the carrier removal rates,theβ-Ga_(2)O_(3) SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11705246,11675233,and 11690041)the Natural Science Foundation of Gansu Province,China(Grant No.17JR5RA316)
文摘Polycrystalline samples of La2Zr2O7 pyrochlore are irradiated by different energetic heavy ions to investigate the dependence of the vibrational mode variations on the irradiation parameters. The applied electronic energy loss(d E/dx)e increases from about 5.2 keV/nm to 39.6 keV/nm. The ion fluence ranges from 1× 10^11 ions/cm^2 to 6× 10^15 ions/cm^2.Vibrational modes of irradiated pyrochlore are analyzed by using Raman spectrum. Infrared active modes F1 uat 192, 308,and 651 cm^-1 appear in Raman spectra, and the F2 gband at 265 cm-1 rises up due to the irradiation by 200-MeV Kr ions with(d E/dx)e of 16.0 keV/nm. Differently, for the pyrochlore irradiated by 1750-MeV Bi ions with(d E/dx)e of 39.6 keV/nm, in spite of the appearance of infrared active mode F1 u651 cm^-1, the amorphous structure occurs according to the vibrational mode variations of pyrochlore irradiated at higher ion fluences. Amorphous tracks are observed in the samples, which confirm the occurrence of pyrochlore–amorphous transition in pyrochlore irradiated with(d E/dx)e of 39.6 keV/nm.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 11675233,11690041,11405229,11705246,and 11505243)Chinese Academy of Sciences “Light of West China” Programthe Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2020412)。
文摘The various morphologies of tracks in MoS2 irradiated by swift heavy ions at normal and 30° incidence with 9.5–25.0 MeV/u 86Kr, 129Xe, 181Ta, and 209Bi ions were investigated by transmission electron microscopy. The diameter of ion tracks increases from 1.9 nm to 4.5 nm with increasing electronic energy loss. The energy loss threshold of the track formation in MoS2 is predicted as about 9.7 keV/nm based on the thermal spike model and it seems consistent with the experimental results. It is shown that the morphology of ion tracks is related to the penetration length of ions in MoS2. The formation process of ion tracks is discussed based on the cooperative process of outflow and recrystallization of the molten phase during rapid quenching.
基金supported by the National Natural Science Foundation of China(Nos.12035019,62234013,12205350,12075290,12175287)the China National Postdoctoral Program for Innovative Talents(BX20200340)+1 种基金the fund of Innovation Center of Radiation Application(No.KFZC2022020601)the Chinese Academy of Sciences(CAS)“Light of West China"Program hosted by Jian Zeng.
文摘Gallium nitride(GaN)-based devices have significant potential for space applications.However,the mechanisms of radiation damage to the device,particularly from strong ionizing radiation,remains unknown.This study investigates the effects of radiation on p-gate AlGaN/GaN high-electron-mobility transistors(HEMTs).Under a high voltage,the HEMT leakage current increased sharply and was accompanied by a rapid increase in power density that caused"thermal burnout"of the devices.In addition,a burnout signature appeared on the surface of the burned devices,proving that a single-event burnout effect occurred.Additionally,degradation,including an increase in the on-resistance and a decrease in the breakdown voltage,was observed in devices irradiated with high-energy heavy ions and without bias.The latent tracks induced by heavy ions penetrated the heterojunction interface and extended into the GaN layer.Moreover,a new type of N_(2)bubble defect was discovered inside the tracks using Fresnel analysis.The accumulation of N_(2)bubbles in the heterojunction and buffer layers is more likely to cause leakage and failure.This study indicates that electrical stress accelerates the failure rate and that improving heat dissipation is an effective reinforcement method for GaN-based devices.
