The diffusion coefficient of the minority charge carriers in the base of a silicon solar cell under temperature and subjected to a magnetic field, passes in reso-nance at temperature (T<sub>opt</sub>). For...The diffusion coefficient of the minority charge carriers in the base of a silicon solar cell under temperature and subjected to a magnetic field, passes in reso-nance at temperature (T<sub>opt</sub>). For this same magnetic field, the diffusion coeffi-cient of the photogenerated carriers by a monochromatic light in frequency modulation enters into resonance, at the frequency (ω<sub>c</sub>). Under this double resonance in temperature and frequency, the diffusion coefficient is used in the expression of the recombination velocity of the minority charge carriers on the back side of the base of the solar cell (n<sup>+</sup>/p/p<sup>+</sup>), to obtain, by a graphical method, the optimum thickness. A modeling of the results obtained shows a material saving (Si), in the development of the solar cell.展开更多
The bifacial silicon solar cell, placed at temperature (T) and illuminated from the back side by monochromatic light in frequency modulation (ω), is studied from the frequency dynamic diffusion equation, relative to ...The bifacial silicon solar cell, placed at temperature (T) and illuminated from the back side by monochromatic light in frequency modulation (ω), is studied from the frequency dynamic diffusion equation, relative to the density of excess minority carriers in the base. The expressions of the dynamic recombination velocities of the minority carriers on the rear side of the base Sb1(D(ω, T);H) and Sb2(α, D(ω, T);H), are analyzed as a function of the dynamic diffusion coefficient (D(ω, T)), the absorption coefficient (α(λ)) and the thickness of the base (H). Thus their graphic representation makes it possible to go up, to the base optimum thickness (Hopt(ω, T)), for different temperature values and frequency ranges of modulation of monochromatic light, of strong penetration. The base optimum thickness (Hopt(ω, T)) decreases with temperature, regardless of the frequency range and allows the realization of the solar cell with few material (Si).展开更多
This work deals with minority carrier diffusion coefficient study in silicon solar cell, under both temperature and applied magnetic field. New expressions of diffusion coefficient are pointed out, which gives attenti...This work deals with minority carrier diffusion coefficient study in silicon solar cell, under both temperature and applied magnetic field. New expressions of diffusion coefficient are pointed out, which gives attention to thermal behavior of minority carrier that is better understood with Umklapp process. This study allowed to determine an optimum temperature which led to maximum diffusion coefficient value while magnetic field remained constant.展开更多
In this paper, we extend the concept of back surface recombination through a study of a silicon mono facial solar cell in static regime and under polychromatic illumination. Back surface recombination velocities noted...In this paper, we extend the concept of back surface recombination through a study of a silicon mono facial solar cell in static regime and under polychromatic illumination. Back surface recombination velocities noted Sbe, Sbj and Sbr are determined for which respectively we derived, the power, the fill factor and the conversion efficiency, that become constant whatever the thickness of the solar cell. We have then obtained the expression of the minority carrier’s density in the base from the continuity equation. We then have determined the photocurrent density, the photo voltage, the power, the fill factor and finally the conversion efficiency.展开更多
The minority carrier’s recombination velocity at the junction and at the back surface is used for the modeling and determination of the optimum thickness of the base of a silicon solar cell in the static regime, unde...The minority carrier’s recombination velocity at the junction and at the back surface is used for the modeling and determination of the optimum thickness of the base of a silicon solar cell in the static regime, under magnetic field and temperature influence. This study takes into account the Umklapp process and the Lorentz effect on the minority carriers photogenerated in the base.展开更多
文摘The diffusion coefficient of the minority charge carriers in the base of a silicon solar cell under temperature and subjected to a magnetic field, passes in reso-nance at temperature (T<sub>opt</sub>). For this same magnetic field, the diffusion coeffi-cient of the photogenerated carriers by a monochromatic light in frequency modulation enters into resonance, at the frequency (ω<sub>c</sub>). Under this double resonance in temperature and frequency, the diffusion coefficient is used in the expression of the recombination velocity of the minority charge carriers on the back side of the base of the solar cell (n<sup>+</sup>/p/p<sup>+</sup>), to obtain, by a graphical method, the optimum thickness. A modeling of the results obtained shows a material saving (Si), in the development of the solar cell.
文摘The bifacial silicon solar cell, placed at temperature (T) and illuminated from the back side by monochromatic light in frequency modulation (ω), is studied from the frequency dynamic diffusion equation, relative to the density of excess minority carriers in the base. The expressions of the dynamic recombination velocities of the minority carriers on the rear side of the base Sb1(D(ω, T);H) and Sb2(α, D(ω, T);H), are analyzed as a function of the dynamic diffusion coefficient (D(ω, T)), the absorption coefficient (α(λ)) and the thickness of the base (H). Thus their graphic representation makes it possible to go up, to the base optimum thickness (Hopt(ω, T)), for different temperature values and frequency ranges of modulation of monochromatic light, of strong penetration. The base optimum thickness (Hopt(ω, T)) decreases with temperature, regardless of the frequency range and allows the realization of the solar cell with few material (Si).
文摘This work deals with minority carrier diffusion coefficient study in silicon solar cell, under both temperature and applied magnetic field. New expressions of diffusion coefficient are pointed out, which gives attention to thermal behavior of minority carrier that is better understood with Umklapp process. This study allowed to determine an optimum temperature which led to maximum diffusion coefficient value while magnetic field remained constant.
文摘In this paper, we extend the concept of back surface recombination through a study of a silicon mono facial solar cell in static regime and under polychromatic illumination. Back surface recombination velocities noted Sbe, Sbj and Sbr are determined for which respectively we derived, the power, the fill factor and the conversion efficiency, that become constant whatever the thickness of the solar cell. We have then obtained the expression of the minority carrier’s density in the base from the continuity equation. We then have determined the photocurrent density, the photo voltage, the power, the fill factor and finally the conversion efficiency.
文摘The minority carrier’s recombination velocity at the junction and at the back surface is used for the modeling and determination of the optimum thickness of the base of a silicon solar cell in the static regime, under magnetic field and temperature influence. This study takes into account the Umklapp process and the Lorentz effect on the minority carriers photogenerated in the base.
