This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the Chi...This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the China spallation neutron source(CSNS)and Xi'an pulsed reactor(XAPR).The mean dark signal,dark signal non-uniformity(DSNU),dark signal distribution,and hot pixels of the CIS were compared between the CSNS back-n and XAPR neutron irradiations.The nonionizing energy loss and energy distribution of primary knock-on atoms in silicon,induced by neutrons,were calculated using the open-source package Geant4.An analysis combining experimental and simulation results showed a noticeable proportionality between the increase in the mean dark signal and the displacement damage dose(DDD).Additionally,neutron energies influence DSNU,dark signal distribution,and hot pixels.High neutron energies at the same DDD level may lead to pronounced dark signal non-uniformity and elevated hot pixel values.展开更多
The objective of this work is to analyze the transient effects of ^60Co gamma rays in the CMOS image sensor (CIS) using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electr...The objective of this work is to analyze the transient effects of ^60Co gamma rays in the CMOS image sensor (CIS) using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electrons when gamma rays traversed a silicon or silicon dioxide cube were calculated. A simplified model of a 500 × 500 CIS array was established, and the transient effects of gamma rays in the CIS were simulated. The raw images were captured when the CIS was irradiated by gamma rays. The experimental results were compared with the simulation results. The characteristics of the typical events induced by transient effects were analyzed.展开更多
Neutron radiation experiments of optocouplers at back-streaming white neutrons(back-n)in China Spallation Neutron Source(CSNS)are presented.The displacement damages induced by neutron radiation are analyzed.The perfor...Neutron radiation experiments of optocouplers at back-streaming white neutrons(back-n)in China Spallation Neutron Source(CSNS)are presented.The displacement damages induced by neutron radiation are analyzed.The performance degradations of two types of optocouplers are compared.The degradations of current transfer ratio(CTR)are analyzed,and the mechanisms induced by radiation are also demonstrated.With the increase of the accumulated fluence,the CTR is degrading linearly with neutron fluence.The radiation hardening of optocouplers can be improved when the forward current is increased.Other parameters related to CTR degradation of optocouplers are also analyzed.展开更多
基金supported by the Young Elite Scientists Sponsorship Program by CAST(No.YESS20210441)the National Natural Science Foundation of China(Nos.U2167208,11875223)。
文摘This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the China spallation neutron source(CSNS)and Xi'an pulsed reactor(XAPR).The mean dark signal,dark signal non-uniformity(DSNU),dark signal distribution,and hot pixels of the CIS were compared between the CSNS back-n and XAPR neutron irradiations.The nonionizing energy loss and energy distribution of primary knock-on atoms in silicon,induced by neutrons,were calculated using the open-source package Geant4.An analysis combining experimental and simulation results showed a noticeable proportionality between the increase in the mean dark signal and the displacement damage dose(DDD).Additionally,neutron energies influence DSNU,dark signal distribution,and hot pixels.High neutron energies at the same DDD level may lead to pronounced dark signal non-uniformity and elevated hot pixel values.
基金supported by the National Natural Science Foundation of China(Nos.11805155,11875223,and 11690043)the Chinese Academy of Sciences strategic pilot science and technology project(No.XDA15015000)+1 种基金the Innovation Foundation of Radiation Application(No.KFZC2018040201)the Foundation of State Key Laboratory of China(Nos.SKLIPR1803 and 1610)
文摘The objective of this work is to analyze the transient effects of ^60Co gamma rays in the CMOS image sensor (CIS) using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electrons when gamma rays traversed a silicon or silicon dioxide cube were calculated. A simplified model of a 500 × 500 CIS array was established, and the transient effects of gamma rays in the CIS were simulated. The raw images were captured when the CIS was irradiated by gamma rays. The experimental results were compared with the simulation results. The characteristics of the typical events induced by transient effects were analyzed.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11875223,11805155,and 11690043)the Chinese Academy of Sciences Strategic Pilot Science and Technology Project(Grant No.XDA15015000)+1 种基金the Innovation Foundation of Radiation Application,China(Grant No.KFZC2018040201)the Foundation of State Key Laboratory of China(Grant Nos.SKLIPR1803 and 1903Z)
文摘Neutron radiation experiments of optocouplers at back-streaming white neutrons(back-n)in China Spallation Neutron Source(CSNS)are presented.The displacement damages induced by neutron radiation are analyzed.The performance degradations of two types of optocouplers are compared.The degradations of current transfer ratio(CTR)are analyzed,and the mechanisms induced by radiation are also demonstrated.With the increase of the accumulated fluence,the CTR is degrading linearly with neutron fluence.The radiation hardening of optocouplers can be improved when the forward current is increased.Other parameters related to CTR degradation of optocouplers are also analyzed.
