Among the numerous transition metal catalysts,manganese-based compounds are considered as promising peroxymonosulfate(PMS)catalysts due to their low cost and environmental friendliness,such as cryptomelane manganese o...Among the numerous transition metal catalysts,manganese-based compounds are considered as promising peroxymonosulfate(PMS)catalysts due to their low cost and environmental friendliness,such as cryptomelane manganese oxide(K_(2-x)Mn_(8)O_(16):abbreviation KMnO).However,the limited catalytic performance of KMnO limits its practical application.In this work,iron-doped KMnO(Fe-KMnO)was prepared by one-step hydrothermal method to optimize its catalytic performance.Compared with KMnO/PMS system,Fe-KMnO/PMS system possessed more excellent removal efficiency of tetracycline(TC).Meanwhile,the Fe-KMnO/PMS system also exhibited good practical application potential and excellent stability.The mechanism of Fe-KMnO activation of PMS was further analyzed in detail.It was found that Fe participated in the redox of high-valent Mn,which promoted the activation of PMS.Moreover,The Fe site as an adsorption site enhanced the TC enrichment ability of the catalyst,reducing the mass transfer resistance and further enhancing the TC removal ability of Fe-KMnO/PMS system.This work not only provides an excellent PMS catalyst,but also offers new insights into the mechanism of PMS activation by bimetallic manganese-based catalysts.展开更多
4H-SiC single photon counting avalanche photodiodes(SPADs)are prior devices for weak ultraviolet(UV)signal detection with the advantages of small size,low leakage current,high avalanche multiplication gain,and high qu...4H-SiC single photon counting avalanche photodiodes(SPADs)are prior devices for weak ultraviolet(UV)signal detection with the advantages of small size,low leakage current,high avalanche multiplication gain,and high quantum efficiency,which benefit from the large bandgap energy,high carrier drift velocity and excellent physical stability of 4 H-SiC semiconductor material.UV detectors are widely used in many key applications,such as missile plume detection,corona discharge,UV astronomy,and biological and chemical agent detection.In this paper,we will describe basic concepts and review recent results on device design,process development,and basic characterizations of 4 H-SiC avalanche photodiodes.Several promising device structures and uniformity of avalanche multiplication are discussed,which are important for achieving high performance of 4 HSiC UV SPADs.展开更多
Background:MicroRNA-101(miR-101)is a tumor suppressor microRNA(miRNA)and its loss is associated with the occurrence and progression of various diseases.However,the biological function and target of miR-101 in the path...Background:MicroRNA-101(miR-101)is a tumor suppressor microRNA(miRNA)and its loss is associated with the occurrence and progression of various diseases.However,the biological function and target of miR-101 in the pathogenesis of hypertrophic scars(HS)remains unknown.Methods:We harvested HS and paired normal skin(NS)tissue samples from patients and cultured their fibroblasts(HSF and NSF,respectively).We used quantitative reverse transcriptase polymerase chain reaction(qRT-PCR),fluorescence in situ hybridization(FISH),enzyme-linked immunosorbent assays(ELISA)and Western blot analyses to measure mRNA levels and protein expression of miR-101,enhancer of zeste homolog 2(EZH2),collagen 1 and 3(Col1 and Col3)andα-smooth muscle actin(α-SMA)in different in vitro conditions.We also used RNA sequencing to evaluate the relevant signaling pathways and bioinformatics analysis and dual-luciferase reporter assays to predict miR-101 targets.We utilized a bleomycin-induced fibrosis mouse model in which we injected miR-101 mimics to evaluate collagen deposition in vivo.Results:We found low expression of miR-101 in HS and HSF compared to NS and NSF.Overexpressing miR-101 decreased Col1,Col3 andα-SMA expression in HSF.We detected high expression of EZH2 in HS and HSF.Knockdown of EZH2 decreased Col1,Col3 andα-SMA in HSF.Mechanistically,miR-101 targeted the 3-untranslated region(3UTR)of EZH2,as indicated by the decreased expression of EZH2.Overexpressing EZH2 rescued miR-101-induced collagen repression.MiR-101 mimics effectively suppressed collagen deposition in the bleomycin-induced fibrosis mouse model.Conclusions:Our data reveal that miR-101 targets EZH2 in HS collagen production,providing new insight into the pathological mechanisms underlying HS formation.展开更多
Neuromorphic applications have shown great promise not only for efficient parallel computing mode to hold certain computational tasks,such as perception and recognition,but also as key biomimetic elements for th intel...Neuromorphic applications have shown great promise not only for efficient parallel computing mode to hold certain computational tasks,such as perception and recognition,but also as key biomimetic elements for th intelligent sensory system of next-generation robotics.However,achieving such a biomimetic nociceptor tha can adaptively switch operation mode with a stimulation threshold remains a challenge.Through rational design of material properties and device structures,we realized an easily-fabricated,low-energy,and reconfigurable no ciceptor.It is capable of threshold-triggered adaptive bi-mode jump that resembles the biological alarm system With a tunnel silicon nitride(Si_(3)N_(4))we mimicked the intensity-and rehearsal-triggered jump by means of th tunneling mode transition of Si_(3)N_(4)dielectric.Under threshold signals the device can also express some common synaptic functions with an extremely low energy density of 33.5 f J∕μm^(2).In addition,through the modulation o Si_(3)N_(4)thickness it is relatively easy to fabricate the device with differing pain degree.Our nociceptor analog based on a tunneling layer provides an opportunity for the analog pain alarm system and opens up a new path toward threshold-related novel applications.展开更多
In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated.With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode ar...In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated.With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved via Mg implantation. As revealed in the UV detection characterizations, these diodes exhibit a sharp wavelength cutoff at 365 nm, high UV/visible rejection ratio of 1.2 × 10~4, and high photoresponsivity of 0.35 A/W, and are proved to be comparable with commercially available GaN p-n photodiodes. Additionally, a localized states-related gain mechanism is systematically investigated, and a relevant physics model of electricfield-assisted photocarrier hopping is proposed. The demonstrated Mg ion-implantation-based approach is believed to be an applicable and CMOS-process-compatible technology for GaN-based p-i-n photodiodes.展开更多
Understanding detailed avalanche mechanisms is critical for design optimization of avalanche photodiodes(APDs).In this work,avalanche characteristics and single photon counting performance of 4H-SiC n-i-p and p-i-n AP...Understanding detailed avalanche mechanisms is critical for design optimization of avalanche photodiodes(APDs).In this work,avalanche characteristics and single photon counting performance of 4H-SiC n-i-p and p-i-n APDs are compared.By studying the evolution of breakdown voltage as a function of incident light wavelength,it is confirmed that at the deep ultraviolet(UV)wavelength region the avalanche events in 4H-SiC n-i-p APDs are mainly induced by hole-initiated ionization,while electron-initiated ionization is the main cause of avalanche breakdown in 4H-SiC p-i-n APDs.Meanwhile,at the same dark count rate,the single photon counting efficiency of n-i-p APDs is considerably higher than that of p-i-n APDs.The higher performance of n-i-p APDs can be explained by the larger impact ionization coefficient of holes in 4H-SiC.In addition,this is the first time,to the best of our knowledge,to report single photon detection performance of vertical 4H-SiC n-i-p-n APDs.展开更多
基金supported by the National Natural Science Foundation of China (21806115)Sichuan Science and Technology Program (2020YJ0149)+1 种基金the Power Construction of China (P42819,DJ-ZDXM-2019-42)the Supported by Sichuan Science and Technology Program (2021ZDZX0012)。
文摘Among the numerous transition metal catalysts,manganese-based compounds are considered as promising peroxymonosulfate(PMS)catalysts due to their low cost and environmental friendliness,such as cryptomelane manganese oxide(K_(2-x)Mn_(8)O_(16):abbreviation KMnO).However,the limited catalytic performance of KMnO limits its practical application.In this work,iron-doped KMnO(Fe-KMnO)was prepared by one-step hydrothermal method to optimize its catalytic performance.Compared with KMnO/PMS system,Fe-KMnO/PMS system possessed more excellent removal efficiency of tetracycline(TC).Meanwhile,the Fe-KMnO/PMS system also exhibited good practical application potential and excellent stability.The mechanism of Fe-KMnO activation of PMS was further analyzed in detail.It was found that Fe participated in the redox of high-valent Mn,which promoted the activation of PMS.Moreover,The Fe site as an adsorption site enhanced the TC enrichment ability of the catalyst,reducing the mass transfer resistance and further enhancing the TC removal ability of Fe-KMnO/PMS system.This work not only provides an excellent PMS catalyst,but also offers new insights into the mechanism of PMS activation by bimetallic manganese-based catalysts.
基金supported in part by National Key R&D Program of China under Grant No. 2016YFB0400902in part by the Priority Academic Program Development of Jiangsu Higher Education Institutions
文摘4H-SiC single photon counting avalanche photodiodes(SPADs)are prior devices for weak ultraviolet(UV)signal detection with the advantages of small size,low leakage current,high avalanche multiplication gain,and high quantum efficiency,which benefit from the large bandgap energy,high carrier drift velocity and excellent physical stability of 4 H-SiC semiconductor material.UV detectors are widely used in many key applications,such as missile plume detection,corona discharge,UV astronomy,and biological and chemical agent detection.In this paper,we will describe basic concepts and review recent results on device design,process development,and basic characterizations of 4 H-SiC avalanche photodiodes.Several promising device structures and uniformity of avalanche multiplication are discussed,which are important for achieving high performance of 4 HSiC UV SPADs.
基金supported by the National Natural Science Foundation of China(81772071 to DHH).
文摘Background:MicroRNA-101(miR-101)is a tumor suppressor microRNA(miRNA)and its loss is associated with the occurrence and progression of various diseases.However,the biological function and target of miR-101 in the pathogenesis of hypertrophic scars(HS)remains unknown.Methods:We harvested HS and paired normal skin(NS)tissue samples from patients and cultured their fibroblasts(HSF and NSF,respectively).We used quantitative reverse transcriptase polymerase chain reaction(qRT-PCR),fluorescence in situ hybridization(FISH),enzyme-linked immunosorbent assays(ELISA)and Western blot analyses to measure mRNA levels and protein expression of miR-101,enhancer of zeste homolog 2(EZH2),collagen 1 and 3(Col1 and Col3)andα-smooth muscle actin(α-SMA)in different in vitro conditions.We also used RNA sequencing to evaluate the relevant signaling pathways and bioinformatics analysis and dual-luciferase reporter assays to predict miR-101 targets.We utilized a bleomycin-induced fibrosis mouse model in which we injected miR-101 mimics to evaluate collagen deposition in vivo.Results:We found low expression of miR-101 in HS and HSF compared to NS and NSF.Overexpressing miR-101 decreased Col1,Col3 andα-SMA expression in HSF.We detected high expression of EZH2 in HS and HSF.Knockdown of EZH2 decreased Col1,Col3 andα-SMA in HSF.Mechanistically,miR-101 targeted the 3-untranslated region(3UTR)of EZH2,as indicated by the decreased expression of EZH2.Overexpressing EZH2 rescued miR-101-induced collagen repression.MiR-101 mimics effectively suppressed collagen deposition in the bleomycin-induced fibrosis mouse model.Conclusions:Our data reveal that miR-101 targets EZH2 in HS collagen production,providing new insight into the pathological mechanisms underlying HS formation.
基金National Natural Science Youth Foundation(62106111)Wuxi"Taihu Light"Science and Technology Research Plan(K20231001)Wuxi University Research Start-up Fund for Introduced Talents(2021r011,2021r012)。
文摘Neuromorphic applications have shown great promise not only for efficient parallel computing mode to hold certain computational tasks,such as perception and recognition,but also as key biomimetic elements for th intelligent sensory system of next-generation robotics.However,achieving such a biomimetic nociceptor tha can adaptively switch operation mode with a stimulation threshold remains a challenge.Through rational design of material properties and device structures,we realized an easily-fabricated,low-energy,and reconfigurable no ciceptor.It is capable of threshold-triggered adaptive bi-mode jump that resembles the biological alarm system With a tunnel silicon nitride(Si_(3)N_(4))we mimicked the intensity-and rehearsal-triggered jump by means of th tunneling mode transition of Si_(3)N_(4)dielectric.Under threshold signals the device can also express some common synaptic functions with an extremely low energy density of 33.5 f J∕μm^(2).In addition,through the modulation o Si_(3)N_(4)thickness it is relatively easy to fabricate the device with differing pain degree.Our nociceptor analog based on a tunneling layer provides an opportunity for the analog pain alarm system and opens up a new path toward threshold-related novel applications.
基金National Key R&D Program of China(2017YFB0403000)National Natural Science Foundation of China(NSFC)(61774081,91850112)+3 种基金Natural Science Foundation of Jiangsu Province(BK20161401)Fundamental Research Funds for the Central Universities(021014380085,021014380093,021014380098)Priority Academic Program Development of Jiangsu Higher Education InstitutionsScience and Technology Project of State Grid Corporation of China(SGSDDK00KJJS1600071)
文摘In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated.With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved via Mg implantation. As revealed in the UV detection characterizations, these diodes exhibit a sharp wavelength cutoff at 365 nm, high UV/visible rejection ratio of 1.2 × 10~4, and high photoresponsivity of 0.35 A/W, and are proved to be comparable with commercially available GaN p-n photodiodes. Additionally, a localized states-related gain mechanism is systematically investigated, and a relevant physics model of electricfield-assisted photocarrier hopping is proposed. The demonstrated Mg ion-implantation-based approach is believed to be an applicable and CMOS-process-compatible technology for GaN-based p-i-n photodiodes.
基金supported by the National Key R&D Program of China (No.2016YFB0400902)the National Natural Science Foundation of China (Nos.61921005 and 62004098)+1 种基金the Natural Science Foundation of Jiangsu Province (No. BK20190302)the Priority Academic Program Development of Jiangsu Higher Education Institutions
文摘Understanding detailed avalanche mechanisms is critical for design optimization of avalanche photodiodes(APDs).In this work,avalanche characteristics and single photon counting performance of 4H-SiC n-i-p and p-i-n APDs are compared.By studying the evolution of breakdown voltage as a function of incident light wavelength,it is confirmed that at the deep ultraviolet(UV)wavelength region the avalanche events in 4H-SiC n-i-p APDs are mainly induced by hole-initiated ionization,while electron-initiated ionization is the main cause of avalanche breakdown in 4H-SiC p-i-n APDs.Meanwhile,at the same dark count rate,the single photon counting efficiency of n-i-p APDs is considerably higher than that of p-i-n APDs.The higher performance of n-i-p APDs can be explained by the larger impact ionization coefficient of holes in 4H-SiC.In addition,this is the first time,to the best of our knowledge,to report single photon detection performance of vertical 4H-SiC n-i-p-n APDs.
