AlGaN/GaN high electron mobility transistors(HEMTs)were irradiated with heavy ions at various fluences.After irradiation by 2.1 GeV^(181) Ta^(32+) ions,the electrical characteristics of the devices significantly decre...AlGaN/GaN high electron mobility transistors(HEMTs)were irradiated with heavy ions at various fluences.After irradiation by 2.1 GeV^(181) Ta^(32+) ions,the electrical characteristics of the devices significantly decreased.The threshold voltage shifted positively by approximately 25%and the saturation currents decreased by approximately 14%.Defects were induced in the band gap and the interface between the gate and barrier acted as tunneling sites,which increased the gate current tunneling probability.According to the pulsed output characteristics,the amount of current collapse significantly increased and more surface state traps were introduced after heavy ion irradiation.The time constants of the induced surface traps were mainly less than 10μs.展开更多
Low-speed rotation of disc in an internal circulation of a novel de-emulsification with rotation-dise horizental contactor(RHC-D) realized de-emulsification for O/W emulsions due to repeated coalescence in oil-wet nar...Low-speed rotation of disc in an internal circulation of a novel de-emulsification with rotation-dise horizental contactor(RHC-D) realized de-emulsification for O/W emulsions due to repeated coalescence in oil-wet narrow channels at a low rotation speed. For three emulsions included ethanol/water/2-ethyl-1-hexanol, ethanol/water/2-ethyl-1-hexanol/SDS(Sodium Dodecyl Sulfonate) and 2-ethyl-1-hexanol/water/SDS emulsion, deemulsification ratios of oil phase could reach 1, 1 and 0.67 respectively at 170 r·min-1, and de-emulsification ratios increased obviously after agitating 10 min. De-emulsification experiment in the seam indicated that oil droplet sizes in O/W emulsion became larger after de-emulsification. The main de-emulsification mechanism in RHCD was the coalescence of oil droplets in oil-wet narrow channels. With increase of the rotation speed, oil droplets dispersed better in the aqueous phase. However, de-emulsification effect enhanced due to the increase of the coalescence rate at a bit higher rotation speed. In addition, internal circulation made those O/W emulsions to be broken repeatedly, consequently de-emulsification ratio increased. Repeated de-emulsification through internal circulation might make continuous extraction of ethanol come true at a low rotation speed.展开更多
In this paper,the etching characteristics of the ultra-high resistivity silicon（UHRS） by using the Bosch process were investigated.The experimental results indicated that the sulfur hexafluoride flux,the temperature...In this paper,the etching characteristics of the ultra-high resistivity silicon（UHRS） by using the Bosch process were investigated.The experimental results indicated that the sulfur hexafluoride flux,the temperature of the substrate,the platen power and the etching intermittence had important influence on the etching rate and the etching morphology of the UHRS.The profiles and morphologies of sidewall were characterized with scanning electron microscopy（SEM）.By using an improved three-stage Bosch process,380-μm deep through holes were fabricated on the UHRS with the average etching rate of about 3.14 μm/min.Meanwhile,the fabrication mechanism of deep through holes on the UHRS by using the three-stage Bosch process was illustrated on the basis of the experimental results.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12035019 and 11690042)Science Challenge Projects(Grant No.TZ2018004)。
文摘AlGaN/GaN high electron mobility transistors(HEMTs)were irradiated with heavy ions at various fluences.After irradiation by 2.1 GeV^(181) Ta^(32+) ions,the electrical characteristics of the devices significantly decreased.The threshold voltage shifted positively by approximately 25%and the saturation currents decreased by approximately 14%.Defects were induced in the band gap and the interface between the gate and barrier acted as tunneling sites,which increased the gate current tunneling probability.According to the pulsed output characteristics,the amount of current collapse significantly increased and more surface state traps were introduced after heavy ion irradiation.The time constants of the induced surface traps were mainly less than 10μs.
文摘Low-speed rotation of disc in an internal circulation of a novel de-emulsification with rotation-dise horizental contactor(RHC-D) realized de-emulsification for O/W emulsions due to repeated coalescence in oil-wet narrow channels at a low rotation speed. For three emulsions included ethanol/water/2-ethyl-1-hexanol, ethanol/water/2-ethyl-1-hexanol/SDS(Sodium Dodecyl Sulfonate) and 2-ethyl-1-hexanol/water/SDS emulsion, deemulsification ratios of oil phase could reach 1, 1 and 0.67 respectively at 170 r·min-1, and de-emulsification ratios increased obviously after agitating 10 min. De-emulsification experiment in the seam indicated that oil droplet sizes in O/W emulsion became larger after de-emulsification. The main de-emulsification mechanism in RHCD was the coalescence of oil droplets in oil-wet narrow channels. With increase of the rotation speed, oil droplets dispersed better in the aqueous phase. However, de-emulsification effect enhanced due to the increase of the coalescence rate at a bit higher rotation speed. In addition, internal circulation made those O/W emulsions to be broken repeatedly, consequently de-emulsification ratio increased. Repeated de-emulsification through internal circulation might make continuous extraction of ethanol come true at a low rotation speed.
基金Project supported by the National Natural Science Foundation of China(Nos.61574108,61574112,61504099)
文摘In this paper,the etching characteristics of the ultra-high resistivity silicon（UHRS） by using the Bosch process were investigated.The experimental results indicated that the sulfur hexafluoride flux,the temperature of the substrate,the platen power and the etching intermittence had important influence on the etching rate and the etching morphology of the UHRS.The profiles and morphologies of sidewall were characterized with scanning electron microscopy（SEM）.By using an improved three-stage Bosch process,380-μm deep through holes were fabricated on the UHRS with the average etching rate of about 3.14 μm/min.Meanwhile,the fabrication mechanism of deep through holes on the UHRS by using the three-stage Bosch process was illustrated on the basis of the experimental results.
