We report on the fabrication and electrical characteristics of Ga-doped ZnO thin film transistors(TFTs).Low Ga-doped(0.7wt%)ZnO thin films were deposited on SiO_(2)/p−Si substrates by rf magnetron sputtering.The GZO T...We report on the fabrication and electrical characteristics of Ga-doped ZnO thin film transistors(TFTs).Low Ga-doped(0.7wt%)ZnO thin films were deposited on SiO_(2)/p−Si substrates by rf magnetron sputtering.The GZO TFTs show a mobility of 1.76 cm2/V⋅s,an on/off ratio of 1.0×10^(6),and a threshold voltage of 35 V.The time−dependent instability of the TFT is studied.The VTH shifts negatively.In addition,the device shows a decrease of the on/off ratio,mainly due to the increase of the off-current.The mechanisms of instability are discussed.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 50972007the Beijing Municipal Natural Science Foundation under Grant No 4092035+2 种基金the National Basic Research Program of China under Grant No 2011CB932703the National Science Fund for Distinguished Young Scholars under Grant No 60825407the Special Items Fund of the Beijing Municipal Commission of Education,and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics.
文摘We report on the fabrication and electrical characteristics of Ga-doped ZnO thin film transistors(TFTs).Low Ga-doped(0.7wt%)ZnO thin films were deposited on SiO_(2)/p−Si substrates by rf magnetron sputtering.The GZO TFTs show a mobility of 1.76 cm2/V⋅s,an on/off ratio of 1.0×10^(6),and a threshold voltage of 35 V.The time−dependent instability of the TFT is studied.The VTH shifts negatively.In addition,the device shows a decrease of the on/off ratio,mainly due to the increase of the off-current.The mechanisms of instability are discussed.
基金supported by the National Natural Science Foundation of China(No.31500938)the Basic Public Welfare Research Program Foundation of Zhejiang Province,China(No.GF21H160045)。
