In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors(HEMTs) were investigated after different radiation doses. The changes in electrical properties of the d...In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors(HEMTs) were investigated after different radiation doses. The changes in electrical properties of the device were obtained, and the related physical mechanisms were analyzed. It indicated that under the radiation dose of 5 × 10^(14) cm^(-2), the channel current cannot be completely pinched off even if the negative gate voltage was lower than the threshold voltage, and the gate leakage current increased significantly. The emission microscopy and scanning electron microscopy were used to determine the damage location. Besides, the radiation dose was adjusted ranging from 5 × 10^(12) to 1 × 10^(14) cm^(-2), and we noticed that the drain-source current increased and the threshold voltage presented slightly negative shift. By calculations, it suggested that the carrier density and electron mobility gradually increased. It provided a reference for the development of device radiation reinforcement technology.展开更多
Large,3D curved electronics are a trend of the microelectronic industry due to their unique ability to conformally coexist with complex surfaces while retaining the electronic functions of 2D planar integrated circuit...Large,3D curved electronics are a trend of the microelectronic industry due to their unique ability to conformally coexist with complex surfaces while retaining the electronic functions of 2D planar integrated circuit technologies.However,these curved electronics present great challenges to the fabrication processes.Here,we propose a reconfigurable,mask-free,conformal fabrication strategy with a robot-like system,called robotized‘transfer-and-jet’printing,to assemble diverse electronic devices on complex surfaces.This novel method is a ground-breaking advance with the unique capability to integrate rigid chips,flexible electronics,and conformal circuits on complex surfaces.Critically,each process,including transfer printing,inkjet printing,and plasma treating,are mask-free,digitalized,and programmable.The robotization techniques,including measurement,surface reconstruction and localization,and path programming,break through the fundamental constraints of 2D planar microfabrication in the context of geometric shape and size.The transfer printing begins with the laser lift-off of rigid chips or flexible electronics from donor substrates,which are then transferred onto a curved surface via a dexterous robotic palm.Then the robotic electrohydrodynamic printing directly writes submicrometer structures on the curved surface.Their permutation and combination allow versatile conformal microfabrication.Finally,robotized hybrid printing is utilized to successfully fabricate a conformal heater and antenna on a spherical surface and a flexible smart sensing skin on a winged model,where the curved circuit,flexible capacitive and piezoelectric sensor arrays,and rigid digital–analog conversion chips are assembled.Robotized hybrid printing is an innovative printing technology,enabling additive,noncontact and digital microfabrication for 3D curved electronics.展开更多
Defective layered Mn-based materials were synthesized by Li/Na ion exchange to improve their electrochemical activity and Coulombic efficiency.The annealing temperature of the Na precursors was important to control th...Defective layered Mn-based materials were synthesized by Li/Na ion exchange to improve their electrochemical activity and Coulombic efficiency.The annealing temperature of the Na precursors was important to control the P3-P2 phase transition,which directly affected the structure and electrochemical characteristics of the final products obtained by ion exchange.The O3-Li_(0.78)[Li_(0.25)Fe_(0.075)Mn_(0.675)]O_(δ) cathode made from a P3-type precursor calcined at 700℃ was analyzed using X-ray photoelectron spectrometry and electron paramagnetic resonance.The results showed that the presence of abundant trivalent manganese and defects resulted in a discharge capacity of 230 mAh/g with an initial Coulombic efficiency of about 109%.Afterward,galvanostatic intermittent titration was performed to examine the Li^(+) ion diffusion coefficients,which affected the reversible capacity.First principles calculations suggested that the charge redistribution induced by oxygen vacancies(OV_(s))greatly affected the local Mn coordination environment and enhanced the structural activity.Moreover,the Li-deficient cathode was a perfect match for the pre-lithiation anode,providing a novel approach to improve the initial Coulombic efficiency and activity of Mn-based materials in the commercial application.展开更多
Perovskite variants have attracted wide interest because of the lead-free nature and strong self-trapped exciton (STE) emission. Divalent Sn(II) in CsSnX3 perovskites is easily oxidized to tetravalent Sn(IV), and the ...Perovskite variants have attracted wide interest because of the lead-free nature and strong self-trapped exciton (STE) emission. Divalent Sn(II) in CsSnX3 perovskites is easily oxidized to tetravalent Sn(IV), and the resulted Cs2SnCl6 vacancy-ordered perovskite variant exhibits poor photoluminescence property although it has a direct band gap. Controllable doping is an effective strategy to regulate the optical properties of Cs2SnX6. Herein, combining the first principles calculation and spectral analysis, we attempted to understand the luminescence mechanism of Te4+-doped Cs2SnCl6 lead-free perovskite variants. The chemical potential and defect formation energy are calculated to confirm theoretically the feasible substitutability of tetravalent Te4+ ions in Cs2SnCl6 lattices for the Sn-site. Through analysis of the absorption, emission/excitation, and time-resolved photoluminescence (PL) spectroscopy, the intense green-yellow emission in Te4+:Cs2SnCl6 was considered to originate from the triplet Te(IV) ion 3P1→1S0 STE recombination. Temperature-dependent PL spectra demonstrated the strong electron-phonon coupling that inducing an evident lattice distortion to produce STEs. We further calculated the electronic band structure and molecular orbital levels to reveal the underlying photophysical process. These results will shed light on the doping modulated luminescence properties in stable lead-free Cs2MX6 vacancy-ordered perovskite variants and be helpful to understand the optical properties and physical processes of doped perovskite variants.展开更多
基金supported by the Key Program of the National Natural Science Foundation of China (Grant No. 62334002)the National Natural Science Foundation of China (Grant No. 62174008)。
文摘In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors(HEMTs) were investigated after different radiation doses. The changes in electrical properties of the device were obtained, and the related physical mechanisms were analyzed. It indicated that under the radiation dose of 5 × 10^(14) cm^(-2), the channel current cannot be completely pinched off even if the negative gate voltage was lower than the threshold voltage, and the gate leakage current increased significantly. The emission microscopy and scanning electron microscopy were used to determine the damage location. Besides, the radiation dose was adjusted ranging from 5 × 10^(12) to 1 × 10^(14) cm^(-2), and we noticed that the drain-source current increased and the threshold voltage presented slightly negative shift. By calculations, it suggested that the carrier density and electron mobility gradually increased. It provided a reference for the development of device radiation reinforcement technology.
基金The authors acknowledge support from the National Nat-ural Science Foundation of China(51635007,51925503,51705179)Natural Science Foundation of Hubei Province of China(2020CFA028).
文摘Large,3D curved electronics are a trend of the microelectronic industry due to their unique ability to conformally coexist with complex surfaces while retaining the electronic functions of 2D planar integrated circuit technologies.However,these curved electronics present great challenges to the fabrication processes.Here,we propose a reconfigurable,mask-free,conformal fabrication strategy with a robot-like system,called robotized‘transfer-and-jet’printing,to assemble diverse electronic devices on complex surfaces.This novel method is a ground-breaking advance with the unique capability to integrate rigid chips,flexible electronics,and conformal circuits on complex surfaces.Critically,each process,including transfer printing,inkjet printing,and plasma treating,are mask-free,digitalized,and programmable.The robotization techniques,including measurement,surface reconstruction and localization,and path programming,break through the fundamental constraints of 2D planar microfabrication in the context of geometric shape and size.The transfer printing begins with the laser lift-off of rigid chips or flexible electronics from donor substrates,which are then transferred onto a curved surface via a dexterous robotic palm.Then the robotic electrohydrodynamic printing directly writes submicrometer structures on the curved surface.Their permutation and combination allow versatile conformal microfabrication.Finally,robotized hybrid printing is utilized to successfully fabricate a conformal heater and antenna on a spherical surface and a flexible smart sensing skin on a winged model,where the curved circuit,flexible capacitive and piezoelectric sensor arrays,and rigid digital–analog conversion chips are assembled.Robotized hybrid printing is an innovative printing technology,enabling additive,noncontact and digital microfabrication for 3D curved electronics.
基金The Beijing Municipal Education Commission(KZ201910005003)supported this work。
文摘Defective layered Mn-based materials were synthesized by Li/Na ion exchange to improve their electrochemical activity and Coulombic efficiency.The annealing temperature of the Na precursors was important to control the P3-P2 phase transition,which directly affected the structure and electrochemical characteristics of the final products obtained by ion exchange.The O3-Li_(0.78)[Li_(0.25)Fe_(0.075)Mn_(0.675)]O_(δ) cathode made from a P3-type precursor calcined at 700℃ was analyzed using X-ray photoelectron spectrometry and electron paramagnetic resonance.The results showed that the presence of abundant trivalent manganese and defects resulted in a discharge capacity of 230 mAh/g with an initial Coulombic efficiency of about 109%.Afterward,galvanostatic intermittent titration was performed to examine the Li^(+) ion diffusion coefficients,which affected the reversible capacity.First principles calculations suggested that the charge redistribution induced by oxygen vacancies(OV_(s))greatly affected the local Mn coordination environment and enhanced the structural activity.Moreover,the Li-deficient cathode was a perfect match for the pre-lithiation anode,providing a novel approach to improve the initial Coulombic efficiency and activity of Mn-based materials in the commercial application.
基金This work was supported by the National Natural Science Foundation of China(Nos.21661010 and 11774134)Guangxi Natural Science Foundation(No.2017GXNSFGA198005)+1 种基金Natural Science Foundation of Hunan Province(No.2020JJ4424)Research Foundation of Education Bureau of Hunan Province(No.18A009)。
文摘Perovskite variants have attracted wide interest because of the lead-free nature and strong self-trapped exciton (STE) emission. Divalent Sn(II) in CsSnX3 perovskites is easily oxidized to tetravalent Sn(IV), and the resulted Cs2SnCl6 vacancy-ordered perovskite variant exhibits poor photoluminescence property although it has a direct band gap. Controllable doping is an effective strategy to regulate the optical properties of Cs2SnX6. Herein, combining the first principles calculation and spectral analysis, we attempted to understand the luminescence mechanism of Te4+-doped Cs2SnCl6 lead-free perovskite variants. The chemical potential and defect formation energy are calculated to confirm theoretically the feasible substitutability of tetravalent Te4+ ions in Cs2SnCl6 lattices for the Sn-site. Through analysis of the absorption, emission/excitation, and time-resolved photoluminescence (PL) spectroscopy, the intense green-yellow emission in Te4+:Cs2SnCl6 was considered to originate from the triplet Te(IV) ion 3P1→1S0 STE recombination. Temperature-dependent PL spectra demonstrated the strong electron-phonon coupling that inducing an evident lattice distortion to produce STEs. We further calculated the electronic band structure and molecular orbital levels to reveal the underlying photophysical process. These results will shed light on the doping modulated luminescence properties in stable lead-free Cs2MX6 vacancy-ordered perovskite variants and be helpful to understand the optical properties and physical processes of doped perovskite variants.
