We studied silicon,carbon,and SiC xnanostructures fabricated using liquid-phase electron-beam-induced deposition technology in transmission electron microscopy systems.Nanodots obtained from fixed electron beam irradi...We studied silicon,carbon,and SiC xnanostructures fabricated using liquid-phase electron-beam-induced deposition technology in transmission electron microscopy systems.Nanodots obtained from fixed electron beam irradiation followed a universal size versus beam dose trend,with precursor concentrations from pure Si Cl4to 0%SiC l4in CH2Cl2,and electron beam intensity ranges of two orders of magnitude,showing good controllability of the deposition.Secondary electrons contributed to the determination of the lateral sizes of the nanostructures,while the primary beam appeared to have an effect in reducing the vertical growth rate.These results can be used to generate donut-shaped nanostructures.Using a scanning electron beam,line structures with both branched and unbranched morphologies were also obtained.The liquid-phase electron-beaminduced deposition technology is shown to be an effective tool for advanced nanostructured material generation.展开更多
SiCx nano dots and nano wires with sizes from 60 nm to approximately 2μm were fabricated using liquid cell transmission electron microscope(TEM)technology.A SiCl_(4)in CH_(2)Cl_(2)solution was sealed between two piec...SiCx nano dots and nano wires with sizes from 60 nm to approximately 2μm were fabricated using liquid cell transmission electron microscope(TEM)technology.A SiCl_(4)in CH_(2)Cl_(2)solution was sealed between two pieces of Si_(3)N_(4)window grids in an in situ TEM liquid cell.Focused 200 keV electron beams were used to bombard the sealed precursors,which caused decomposition of the precursor materials,and deposition of the nano materials on the Si_(3)N_(4)window substrates.The size of nano dots increased with beam exposure time,following an approximately exponential relationship with the beam doses.Secondary electrons are attributed as the primary sources for the Si and C reduction.A nano device was formed from a deposited nano wire,with its electrical property characterized.展开更多
基金supported by the U.S.Department of Energy under grants DE-FG02-07ER46453 and DEFG02-07ER46471supports from the Shanghai Leading Academic Discipline Project(B502)+4 种基金the Shanghai Key Laboratory Project(08DZ2230500)the Science and Technology Commission of Shanghai Municipality(11nm0507000)the State Key Laboratory of Functional Materials for Informatics Open Project(SKL201306)the Shanghai Pujiang Program(13PJ1401700)the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry are highly acknowledged
文摘We studied silicon,carbon,and SiC xnanostructures fabricated using liquid-phase electron-beam-induced deposition technology in transmission electron microscopy systems.Nanodots obtained from fixed electron beam irradiation followed a universal size versus beam dose trend,with precursor concentrations from pure Si Cl4to 0%SiC l4in CH2Cl2,and electron beam intensity ranges of two orders of magnitude,showing good controllability of the deposition.Secondary electrons contributed to the determination of the lateral sizes of the nanostructures,while the primary beam appeared to have an effect in reducing the vertical growth rate.These results can be used to generate donut-shaped nanostructures.Using a scanning electron beam,line structures with both branched and unbranched morphologies were also obtained.The liquid-phase electron-beaminduced deposition technology is shown to be an effective tool for advanced nanostructured material generation.
基金The experiments have been carried out in part in the Frederick Seitz Materials Research Laboratory Central Facilities,University of Illinois,which are partially supported by the U.S.Department of Energy under grants DE-FG02-07ER46453 and DE-FG02-07ER46471The authors thank S.J.Dillon,Y.Liu,J.Mabon,K.-W.Noh,A.Shah,T.Shang,J.G.Wen,J.M.Zuo for the kind help.The project was supported by Shanghai Leading Academic Discipline Project(B502)+2 种基金Shanghai Key Laboratory Project(08DZ2230500)Fundamental Research Fund of ECUST,Science and Technology Commission of Shanghai Municipality Project(11nm0507000)the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry.
文摘SiCx nano dots and nano wires with sizes from 60 nm to approximately 2μm were fabricated using liquid cell transmission electron microscope(TEM)technology.A SiCl_(4)in CH_(2)Cl_(2)solution was sealed between two pieces of Si_(3)N_(4)window grids in an in situ TEM liquid cell.Focused 200 keV electron beams were used to bombard the sealed precursors,which caused decomposition of the precursor materials,and deposition of the nano materials on the Si_(3)N_(4)window substrates.The size of nano dots increased with beam exposure time,following an approximately exponential relationship with the beam doses.Secondary electrons are attributed as the primary sources for the Si and C reduction.A nano device was formed from a deposited nano wire,with its electrical property characterized.
