Modeling vapor pressure is crucial for studying the moisture reliability of microelectronics, as high vapor pressure can cause device failures in environments with high temperature and humidity. To minimize the impact...Modeling vapor pressure is crucial for studying the moisture reliability of microelectronics, as high vapor pressure can cause device failures in environments with high temperature and humidity. To minimize the impact of vapor pressure, a super-hydrophobic(SH) coating can be applied on the exterior surface of devices in order to prevent moisture penetration. The underlying mechanism of SH coating for enhancing device reliability, however, is still not fully understood. In this paper, we present several existing theories for predicting vapor pressure within microelectronic materials. In addition, we discuss the mechanism and effectiveness of SH coating in preventing water vapor from entering a device, based on experimental results. Two theoretical models, a micro-mechanics-based whole-field vapor pressure model and a convection-diffusion model, are described for predicting vapor pressure. Both methods have been successfully used to explain experimental results on uncoated samples. However, when a device was coated with an SH nanocomposite, weight gain was still observed, likely due to vapor penetration through the SH surface. This phenomenon may cast doubt on the effectiveness of SH coatings in microelectronic devices. Based on current theories and the available experimental results, we conclude that it is necessary to develop a new theory to understand how water vapor penetrates through SH coatings and impacts the materials underneath. Such a theory could greatly improve microelectronics reliability.展开更多
A first search for the Ξ_(bc)^(+)J/ψΞ_(c)^(+) decay is performed by the LHCb experiment with a data sample of proton-proton collisions, corresponding to an integrated luminosity of 9 fb−1 recorded at centre-of-mass...A first search for the Ξ_(bc)^(+)J/ψΞ_(c)^(+) decay is performed by the LHCb experiment with a data sample of proton-proton collisions, corresponding to an integrated luminosity of 9 fb−1 recorded at centre-of-mass energies of 7, 8, and 13 TeV. Two peaking structures are seen with a local (global) significance of 4.3(2.8) and 4.1(2.4) standard deviations at masses of 6571 and 6694 MeV/c2, respectively. Upper limits are set on the Ξ+bc baryon production cross-section times the branching fraction relative to that of the B+c→J/ψD+s decay at centre-of-mass energies of 8 and 13 TeV, in the Ξ+bc and in the B+c rapidity and transverse-momentum ranges from 2.0 to 4.5 and 0 to 20GeV/c, respectively. Upper limits are presented as a function of the Ξ+bc mass and lifetime.展开更多
A search for the rare decays W^(+)→D_(s)^(+)γ and Z→D0γis performed using proton-proton collision data collected by the LHCb experiment at a centre-of-mass energy of 13TeV,corresponding to an integrated luminosity...A search for the rare decays W^(+)→D_(s)^(+)γ and Z→D0γis performed using proton-proton collision data collected by the LHCb experiment at a centre-of-mass energy of 13TeV,corresponding to an integrated luminosity of 2.0fb−1.No significant signal is observed for either decay mode and upper limits on their branching fractions are set using W^(+)→D_(s)^(+)γ and Z→μ+μ−decays as normalization channels.The upper limits are 6.5×10^(−4) and 2.1×10^(−3) at 95% confidence level for the W^(+)→D_(s)^(+)γ and Z→D^(0)γ decay modes,respectively.This is the first reported search for the Z→D^(0)γ decay,while the upper limit on the W+→D+sγbranching fraction improves upon the previous best limit.展开更多
基金the support of the National High-Tech Research and Development Program of China (863 Program) (2015AA03A101)
文摘Modeling vapor pressure is crucial for studying the moisture reliability of microelectronics, as high vapor pressure can cause device failures in environments with high temperature and humidity. To minimize the impact of vapor pressure, a super-hydrophobic(SH) coating can be applied on the exterior surface of devices in order to prevent moisture penetration. The underlying mechanism of SH coating for enhancing device reliability, however, is still not fully understood. In this paper, we present several existing theories for predicting vapor pressure within microelectronic materials. In addition, we discuss the mechanism and effectiveness of SH coating in preventing water vapor from entering a device, based on experimental results. Two theoretical models, a micro-mechanics-based whole-field vapor pressure model and a convection-diffusion model, are described for predicting vapor pressure. Both methods have been successfully used to explain experimental results on uncoated samples. However, when a device was coated with an SH nanocomposite, weight gain was still observed, likely due to vapor penetration through the SH surface. This phenomenon may cast doubt on the effectiveness of SH coatings in microelectronic devices. Based on current theories and the available experimental results, we conclude that it is necessary to develop a new theory to understand how water vapor penetrates through SH coatings and impacts the materials underneath. Such a theory could greatly improve microelectronics reliability.
基金The project support from CERN and from the national agencies:CAPES,CNPq,FAPERJ and FINEP(Brazil)MOST and NSFC(China)+18 种基金CNRS/IN2P3(France)BMBF,DFG and MPG(Germany)INFN(Italy)NWO(Netherlands)MNiSW and NCN(Poland)MEN/IFA(Romania)MICINN(Spain)SNSF and SER(Switzerland)NASU(Ukraine)STFC(United Kingdom)DOE NP and NSF(USA).We acknowledge the computing resources that are provided by CERN,IN2P3(France),KIT and DESY(Germany),INFN(Italy),SURF(Netherlands),PIC(Spain),GridPP(United Kingdom),CSCS(Switzerland),IFIN-HH(Romania),CBPF(Brazil),Polish WLCG(Poland)and NERSC(USA).Individual groups or members have received support from ARC and ARDC(Australia)Minciencias(Colombia)AvH Foundation(Germany)EPLANET,Marie Sklodowska-Curie Actions and ERC(European Union)A*MIDEX,ANR,IPhU and Labex P2IO,and Région Auvergne-RhôneAlpes(France)Key Research Program of Frontier Sciences of CAS,CAS PIFI,CAS CCEPP,Fundamental Research Funds for the Central Universities,and Sci.&Tech.Program of Guangzhou(China)GVA,XuntaGal,GENCAT and Prog.Atracción Talento,CM(Spain)SRC(Sweden)the Leverhulme Trust,the Royal Society and UKRI(United Kingdom).
文摘A first search for the Ξ_(bc)^(+)J/ψΞ_(c)^(+) decay is performed by the LHCb experiment with a data sample of proton-proton collisions, corresponding to an integrated luminosity of 9 fb−1 recorded at centre-of-mass energies of 7, 8, and 13 TeV. Two peaking structures are seen with a local (global) significance of 4.3(2.8) and 4.1(2.4) standard deviations at masses of 6571 and 6694 MeV/c2, respectively. Upper limits are set on the Ξ+bc baryon production cross-section times the branching fraction relative to that of the B+c→J/ψD+s decay at centre-of-mass energies of 8 and 13 TeV, in the Ξ+bc and in the B+c rapidity and transverse-momentum ranges from 2.0 to 4.5 and 0 to 20GeV/c, respectively. Upper limits are presented as a function of the Ξ+bc mass and lifetime.
文摘A search for the rare decays W^(+)→D_(s)^(+)γ and Z→D0γis performed using proton-proton collision data collected by the LHCb experiment at a centre-of-mass energy of 13TeV,corresponding to an integrated luminosity of 2.0fb−1.No significant signal is observed for either decay mode and upper limits on their branching fractions are set using W^(+)→D_(s)^(+)γ and Z→μ+μ−decays as normalization channels.The upper limits are 6.5×10^(−4) and 2.1×10^(−3) at 95% confidence level for the W^(+)→D_(s)^(+)γ and Z→D^(0)γ decay modes,respectively.This is the first reported search for the Z→D^(0)γ decay,while the upper limit on the W+→D+sγbranching fraction improves upon the previous best limit.
