Zr1-xTixCo(x = 0, 0.1, 0.2, 0.3) alloys were prepared by arc-melting method and the effect of Ti substitution on hydrogen storage properties was studied systematically. Hydrogen desorption pressure-composition-tempera...Zr1-xTixCo(x = 0, 0.1, 0.2, 0.3) alloys were prepared by arc-melting method and the effect of Ti substitution on hydrogen storage properties was studied systematically. Hydrogen desorption pressure-composition-temperature(PCT) measurements were carried out using Sievert’s type volumetric apparatus for ZrCo(at 473 K, 573 K and 673 K) and Zr1-xTixCo alloys(at 673 K), respectively. Products after dehydrogenation were characterized by X-ray diffraction(XRD). In addition, the kinetics of Zr1-xTixCo hydride was investigated at 473 K and 673 K,respectively, under hydrogen pressure of 5 MPa. Results showed that Ti substitution for Zr did not change the crystal structure of ZrCo phase.With the increase of temperature from 473 K to 673 K, the extent of disproportionation for ZrCo alloy increased. With Ti content increasing at 673 K, the desorption equilibrium pressure of Zr1-xTixCo-H2 systems elevated and the disproportionation reaction of Zr1-xTixCo alloys was inhibited effectively. Ti substitution decreased the kinetics rate and the effective hydrogen storage capacity of Zr1-xTixCo alloys slightly.Generally speaking, it was found that Zr0.8Ti0.2Co alloy had better anti-disproportionation property with less decrease of effective hydrogen storage capacity which was beneficial to tritium application in the International Thermonuclear Experimental Reactor(ITER).展开更多
In this paper,pure titanium(Ti)thin films deposited by radio frequency sputtering were used as a diffusion barrier layer in a flexible copper indium gallium selenium(CIGS)solar cell on a stainless-steel foil and chara...In this paper,pure titanium(Ti)thin films deposited by radio frequency sputtering were used as a diffusion barrier layer in a flexible copper indium gallium selenium(CIGS)solar cell on a stainless-steel foil and characterized by X-ray diffraction,scanning electron microscopy and second ion mass spectroscopy measurement methods.The influences of the magnetron sputtering pressure on the surface morphology and preferred crystal orientation of Ti films are discussed.It was found that the Ti film showed a(001)preferred orientation and smooth surface topography at lower deposition pressure,while(002)preferred orientation and relatively rough surface topography at higher deposition pressure.In addition,Ti films made with different process pressures were deposited as the barriers and the second ion mass spectroscopy results indicated that a Ti film with the thickness of 200 nm was able to effectively block Fe and Cr diffusion from the stainless-steel foil into the CIGS absorber across the molybdenum back contact.The Ti barrier significantly improved the conversion efficiency of the CIGS solar cell.展开更多
The Zn(O,S)thin film is considered a most promising candidate for a cadmium-free buffer layer of the Cu(In,Ga)Se_(2)(CIGS)thin-film solar cell due to its advantages of optical responses in the short-wavelength region ...The Zn(O,S)thin film is considered a most promising candidate for a cadmium-free buffer layer of the Cu(In,Ga)Se_(2)(CIGS)thin-film solar cell due to its advantages of optical responses in the short-wavelength region and adjustable bandgap.In this paper,the thin-film growth mechanism and process optimization of Zn(O,S)films fabricated using the chemical bath deposition method are sys-tematically investigated.The thickness and quality of Zn(O,S)films were found to be strongly affected by the concentration variation of the precursor chemicals.It was also revealed that different surface morphologies of Zn(O,S)films would appear if the reaction time were changed and,subsequently,the optimum reaction time was defined.The film-growth curve suggested that the growth rate varied linearly with the deposition temperature and some defects appeared when the temperature was too high.In addition,to further improve the film quality,an effective post-treatment approach was proposed and the experimental results showed that the microstructure of the Zn(O,S)thin film was improved by an ammonia etching process followed by an annealing process.For com-parison purposes,both Zn(O,S)-based and CdS-based devices were fabricated and characterized.The device with a Zn(O,S)-CIGS solar cell after post-treatment showed near conversion efficiency comparable to that of the device with the CdS-CIGS cell.展开更多
基金supported by the National Magnetic Confinement Fusion Science Program of China(Grant No.2011GB111003)the National HighTech Research and Development Program of China(Grant No.2011AA03A408)
文摘Zr1-xTixCo(x = 0, 0.1, 0.2, 0.3) alloys were prepared by arc-melting method and the effect of Ti substitution on hydrogen storage properties was studied systematically. Hydrogen desorption pressure-composition-temperature(PCT) measurements were carried out using Sievert’s type volumetric apparatus for ZrCo(at 473 K, 573 K and 673 K) and Zr1-xTixCo alloys(at 673 K), respectively. Products after dehydrogenation were characterized by X-ray diffraction(XRD). In addition, the kinetics of Zr1-xTixCo hydride was investigated at 473 K and 673 K,respectively, under hydrogen pressure of 5 MPa. Results showed that Ti substitution for Zr did not change the crystal structure of ZrCo phase.With the increase of temperature from 473 K to 673 K, the extent of disproportionation for ZrCo alloy increased. With Ti content increasing at 673 K, the desorption equilibrium pressure of Zr1-xTixCo-H2 systems elevated and the disproportionation reaction of Zr1-xTixCo alloys was inhibited effectively. Ti substitution decreased the kinetics rate and the effective hydrogen storage capacity of Zr1-xTixCo alloys slightly.Generally speaking, it was found that Zr0.8Ti0.2Co alloy had better anti-disproportionation property with less decrease of effective hydrogen storage capacity which was beneficial to tritium application in the International Thermonuclear Experimental Reactor(ITER).
文摘In this paper,pure titanium(Ti)thin films deposited by radio frequency sputtering were used as a diffusion barrier layer in a flexible copper indium gallium selenium(CIGS)solar cell on a stainless-steel foil and characterized by X-ray diffraction,scanning electron microscopy and second ion mass spectroscopy measurement methods.The influences of the magnetron sputtering pressure on the surface morphology and preferred crystal orientation of Ti films are discussed.It was found that the Ti film showed a(001)preferred orientation and smooth surface topography at lower deposition pressure,while(002)preferred orientation and relatively rough surface topography at higher deposition pressure.In addition,Ti films made with different process pressures were deposited as the barriers and the second ion mass spectroscopy results indicated that a Ti film with the thickness of 200 nm was able to effectively block Fe and Cr diffusion from the stainless-steel foil into the CIGS absorber across the molybdenum back contact.The Ti barrier significantly improved the conversion efficiency of the CIGS solar cell.
基金financially supported by National Key R&D Program of China(grant no.2018YFB1500200).
文摘The Zn(O,S)thin film is considered a most promising candidate for a cadmium-free buffer layer of the Cu(In,Ga)Se_(2)(CIGS)thin-film solar cell due to its advantages of optical responses in the short-wavelength region and adjustable bandgap.In this paper,the thin-film growth mechanism and process optimization of Zn(O,S)films fabricated using the chemical bath deposition method are sys-tematically investigated.The thickness and quality of Zn(O,S)films were found to be strongly affected by the concentration variation of the precursor chemicals.It was also revealed that different surface morphologies of Zn(O,S)films would appear if the reaction time were changed and,subsequently,the optimum reaction time was defined.The film-growth curve suggested that the growth rate varied linearly with the deposition temperature and some defects appeared when the temperature was too high.In addition,to further improve the film quality,an effective post-treatment approach was proposed and the experimental results showed that the microstructure of the Zn(O,S)thin film was improved by an ammonia etching process followed by an annealing process.For com-parison purposes,both Zn(O,S)-based and CdS-based devices were fabricated and characterized.The device with a Zn(O,S)-CIGS solar cell after post-treatment showed near conversion efficiency comparable to that of the device with the CdS-CIGS cell.
