Al Ga N/Ga N高电子迁移率晶体管的栅极电容由本征电容和边缘电容组成.边缘电容分为外部边缘电容和内部边缘电容,内部边缘电容相比外部边缘电容对器件的开关转换特性更为敏感.本文基于内部边缘电容的形成机理,推导了内部边缘电容C_(ifs...Al Ga N/Ga N高电子迁移率晶体管的栅极电容由本征电容和边缘电容组成.边缘电容分为外部边缘电容和内部边缘电容,内部边缘电容相比外部边缘电容对器件的开关转换特性更为敏感.本文基于内部边缘电容的形成机理,推导了内部边缘电容C_(ifs/d)模型,进一步的分析表明,其与器件的栅极偏置强相关;基于WardDutton电荷分配原则推导了相应的本征电容模型,最后结合外部边缘电容得到了完整的栅极电容模型.由于边缘电容是由器件结构产生的寄生电容,仿真结果表明,若不考虑边缘电容的影响,栅源电容的误差可达80%以上,而栅漏电容的误差可达65%以上.因此,在高频开关应用领域,边缘电容对栅极电容的影响不可忽略.展开更多
The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logar...The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).展开更多
文摘Al Ga N/Ga N高电子迁移率晶体管的栅极电容由本征电容和边缘电容组成.边缘电容分为外部边缘电容和内部边缘电容,内部边缘电容相比外部边缘电容对器件的开关转换特性更为敏感.本文基于内部边缘电容的形成机理,推导了内部边缘电容C_(ifs/d)模型,进一步的分析表明,其与器件的栅极偏置强相关;基于WardDutton电荷分配原则推导了相应的本征电容模型,最后结合外部边缘电容得到了完整的栅极电容模型.由于边缘电容是由器件结构产生的寄生电容,仿真结果表明,若不考虑边缘电容的影响,栅源电容的误差可达80%以上,而栅漏电容的误差可达65%以上.因此,在高频开关应用领域,边缘电容对栅极电容的影响不可忽略.
基金Project(11374094)supported by the National Natural Science Foundation of ChinaProject(2013HZX23)supported by Natural Science Foundation of Hunan University of Technology,ChinaProject(2015JJ3060)supported by Natural Science Foundation of Hunan Province of China
文摘The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).
