Bright organic electroluminescent devices are developed using a metal-doped organic layer intervening between the cathode and the emitting layer. The typical device structure is a glass substrate/indium-tin oxide （IT...Bright organic electroluminescent devices are developed using a metal-doped organic layer intervening between the cathode and the emitting layer. The typical device structure is a glass substrate/indium-tin oxide （ITO）/copper phthalocyanine （CuPc）/N,N＇-bis-（1-naphthl）-diphenyl-1,1＇-biphenyl-4,4＇-diamine （NPB）/Tris（8-quinolinolato） aluminum（Alq3）/Mg-doped CuPc/Ag. At a driving voltage of 11 V, the device with a layer of Mg-doped CuPc （1：2 in weight） shows a brightness of 4312cd/m^2 and a current efficiency of 2.52cd/A, while the reference device exhibits 514 cd/m^2 and 1.25 cd/A.展开更多
A semicrystalline composite, 3, 4, 9, 10 perylenetetracarboxylic dianhydride （PTCDA） doped N,N＇-di（1-naphthyl）- N,N＇-diphenylbenzidine （NPB）, has been fabricated and characterized. An organic light-emitting di...A semicrystalline composite, 3, 4, 9, 10 perylenetetracarboxylic dianhydride （PTCDA） doped N,N＇-di（1-naphthyl）- N,N＇-diphenylbenzidine （NPB）, has been fabricated and characterized. An organic light-emitting diode using such a composite in hole injection exhibits the improved performance as compared with the reference device using neat NPB in hole injection. For example, at a luminance of 2000 cd/m2, the former device gives a current efficiency of 2.0cd/A, higher than 1.6cd/A obtained from the latter device. Furthermore, the semicrystalline composite has been shown thermally to be more stable than the neat NPB thin film, which is useful for making organic light emitting diodes with a prolonged lifetime.展开更多
Organic light emitting diodes employing magnesium doped electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride （Mg：PTCDA） as electron injection layer and silver as cathode were demonstrated. As compared ...Organic light emitting diodes employing magnesium doped electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride （Mg：PTCDA） as electron injection layer and silver as cathode were demonstrated. As compared to Mg ： Ag cathode, the combination of the Mg ： PTCDA layer and silver provided enhanced electron injection into tris （8- quinolinolato） aluminium. The device with 1 ： 2 Mg ： PTCDA and Ag showed an increase of about 12% in the maximum current efficiency, mainly due to the improved hole-electron balance, and an increase of about 28% in the maximum power efficiency, as compared to the control device using Mg ： Ag cathode. The properties of Mg ： PTCDA composites were studied as well.展开更多
Organic light emitting diodes with an interface of organic acceptor 3-, 4-, 9-,10-perylenetetracarboxylic dianhydride （PTCDA） and donor copper phthalocyanine （CuPc） involved in hole injection are fabricated. As co...Organic light emitting diodes with an interface of organic acceptor 3-, 4-, 9-,10-perylenetetracarboxylic dianhydride （PTCDA） and donor copper phthalocyanine （CuPc） involved in hole injection are fabricated. As compared to the conventional device using a 5 nm CuPc hole injection layer, the device using an interface of 10nm PTCDA and 5 nm CuPc layers shows much lower operating voltage with an increase of about 46% in the maximum power efficiency. The enhanced device performance is attributed to the efficient hole generation at the PTCDA/CuPc interface. This study provides a new way of designing hole injection.展开更多
第3代半导体材料是指带隙宽度明显大于硅（S i）（1.1e V）和砷化镓（G a A s）（1.4e V）的宽禁带半导体材料。它具备禁带宽度大、击穿电场高、热导率大、电子饱和漂移速率高、抗辐射能力强等优越性能，是固态光源、下一代射频和电力...第3代半导体材料是指带隙宽度明显大于硅（S i）（1.1e V）和砷化镓（G a A s）（1.4e V）的宽禁带半导体材料。它具备禁带宽度大、击穿电场高、热导率大、电子饱和漂移速率高、抗辐射能力强等优越性能，是固态光源、下一代射频和电力电子器件的“核心”，在半导体照明、消费类电子、5G移动通信、新能源汽车、智能电网、轨道交通等领域有广阔的应用前景，有望突破传统半导体技术的瓶颈，与第1代、第2代半导体技术互补，对节能减排、产业转型升级、催生新的经济增长点发挥重要作用，正在成为全球半导体产业新的战略高地。我国在半导体照明方面已经形成完整的产业链和一定的产业规模，成为全球发展最快的区域，为第3代半导体在其他领域的应用奠定了良好的基础。但我国在电力电子、通讯等领域的研发和产业化与国外差距较大，需要加大研发投入，建立体制机制创新的研发创新和科技服务平台，构建立足地方、带动全国、引领世界的跨学科、跨行业、跨区域的第3代半导体创新价值链，重塑全球半导体产业发展格局。展开更多
With the application of energy-saving, environmental and durable LED lighting products, the reliability testing has become a pivot point for the large scale industrialization and popularization. The paper briefly intr...With the application of energy-saving, environmental and durable LED lighting products, the reliability testing has become a pivot point for the large scale industrialization and popularization. The paper briefly introduces two methods to be respectively applied in the accelerated depreciatinn lesting for the luminous flex of LED lighting products and the life of outdoor LED-driving power, which can sharply shorten the time for lifetime lest. providing references for the LED lighting products＇ reliability evaluation.展开更多
The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. ...The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode.展开更多
文摘Bright organic electroluminescent devices are developed using a metal-doped organic layer intervening between the cathode and the emitting layer. The typical device structure is a glass substrate/indium-tin oxide （ITO）/copper phthalocyanine （CuPc）/N,N＇-bis-（1-naphthl）-diphenyl-1,1＇-biphenyl-4,4＇-diamine （NPB）/Tris（8-quinolinolato） aluminum（Alq3）/Mg-doped CuPc/Ag. At a driving voltage of 11 V, the device with a layer of Mg-doped CuPc （1：2 in weight） shows a brightness of 4312cd/m^2 and a current efficiency of 2.52cd/A, while the reference device exhibits 514 cd/m^2 and 1.25 cd/A.
基金supported by the National Natural Science Foundation of China (Grant No 60606025)
文摘A semicrystalline composite, 3, 4, 9, 10 perylenetetracarboxylic dianhydride （PTCDA） doped N,N＇-di（1-naphthyl）- N,N＇-diphenylbenzidine （NPB）, has been fabricated and characterized. An organic light-emitting diode using such a composite in hole injection exhibits the improved performance as compared with the reference device using neat NPB in hole injection. For example, at a luminance of 2000 cd/m2, the former device gives a current efficiency of 2.0cd/A, higher than 1.6cd/A obtained from the latter device. Furthermore, the semicrystalline composite has been shown thermally to be more stable than the neat NPB thin film, which is useful for making organic light emitting diodes with a prolonged lifetime.
文摘Organic light emitting diodes employing magnesium doped electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride （Mg：PTCDA） as electron injection layer and silver as cathode were demonstrated. As compared to Mg ： Ag cathode, the combination of the Mg ： PTCDA layer and silver provided enhanced electron injection into tris （8- quinolinolato） aluminium. The device with 1 ： 2 Mg ： PTCDA and Ag showed an increase of about 12% in the maximum current efficiency, mainly due to the improved hole-electron balance, and an increase of about 28% in the maximum power efficiency, as compared to the control device using Mg ： Ag cathode. The properties of Mg ： PTCDA composites were studied as well.
文摘Organic light emitting diodes with an interface of organic acceptor 3-, 4-, 9-,10-perylenetetracarboxylic dianhydride （PTCDA） and donor copper phthalocyanine （CuPc） involved in hole injection are fabricated. As compared to the conventional device using a 5 nm CuPc hole injection layer, the device using an interface of 10nm PTCDA and 5 nm CuPc layers shows much lower operating voltage with an increase of about 46% in the maximum power efficiency. The enhanced device performance is attributed to the efficient hole generation at the PTCDA/CuPc interface. This study provides a new way of designing hole injection.
文摘第3代半导体材料是指带隙宽度明显大于硅（S i）（1.1e V）和砷化镓（G a A s）（1.4e V）的宽禁带半导体材料。它具备禁带宽度大、击穿电场高、热导率大、电子饱和漂移速率高、抗辐射能力强等优越性能，是固态光源、下一代射频和电力电子器件的“核心”，在半导体照明、消费类电子、5G移动通信、新能源汽车、智能电网、轨道交通等领域有广阔的应用前景，有望突破传统半导体技术的瓶颈，与第1代、第2代半导体技术互补，对节能减排、产业转型升级、催生新的经济增长点发挥重要作用，正在成为全球半导体产业新的战略高地。我国在半导体照明方面已经形成完整的产业链和一定的产业规模，成为全球发展最快的区域，为第3代半导体在其他领域的应用奠定了良好的基础。但我国在电力电子、通讯等领域的研发和产业化与国外差距较大，需要加大研发投入，建立体制机制创新的研发创新和科技服务平台，构建立足地方、带动全国、引领世界的跨学科、跨行业、跨区域的第3代半导体创新价值链，重塑全球半导体产业发展格局。
文摘With the application of energy-saving, environmental and durable LED lighting products, the reliability testing has become a pivot point for the large scale industrialization and popularization. The paper briefly introduces two methods to be respectively applied in the accelerated depreciatinn lesting for the luminous flex of LED lighting products and the life of outdoor LED-driving power, which can sharply shorten the time for lifetime lest. providing references for the LED lighting products＇ reliability evaluation.
基金Project supported by the National High Technology Research and Development Program of China(No.2012AA03A115)
文摘The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode.
