According to the development trend of modern mobile phones and user requirements,the design and optimization of mobile music player and text reader played a significant role in life abundance and work convenient.This ...According to the development trend of modern mobile phones and user requirements,the design and optimization of mobile music player and text reader played a significant role in life abundance and work convenient.This paper discusses related technologies of J2ME and structural analysis and specific functions achieve of new music player and text reader.This development activities focused on J2ME technology and provide application software for the most widely used mobile platform.展开更多
采用电子束蒸发工艺在GaAs基LED外延层上制备了氧化铟锡(ITO:Indium Tin Oxide)薄膜,采用快速热退火(RTA:Rapid Thermo Annealing)工艺制备ITO薄膜与GaAs外延层的欧姆接触。研究了退火温度、退火时间对ITO薄膜性能以及LED芯片性能的影...采用电子束蒸发工艺在GaAs基LED外延层上制备了氧化铟锡(ITO:Indium Tin Oxide)薄膜,采用快速热退火(RTA:Rapid Thermo Annealing)工艺制备ITO薄膜与GaAs外延层的欧姆接触。研究了退火温度、退火时间对ITO薄膜性能以及LED芯片性能的影响。结果显示:固定退火时间8s时,ITO薄膜方块电阻呈减小趋势,但变化不大,430℃时为7.7Ω/□;LED芯片亮度LOP呈现非线性先上升后下降趋势,430℃时达峰值136mcd;外延片背面欧姆电阻呈现先下降后上升抛物线趋势,440℃时达谷值1.13Ω。固定退火温度415℃时,LED芯片亮度LOP呈现非线性先上升后下降趋势,退火12s时达峰值132.5mcd;外延片背面欧姆电阻呈现先下降后上升抛物线趋势,退火12s时时达谷值0.93Ω。展开更多
文摘According to the development trend of modern mobile phones and user requirements,the design and optimization of mobile music player and text reader played a significant role in life abundance and work convenient.This paper discusses related technologies of J2ME and structural analysis and specific functions achieve of new music player and text reader.This development activities focused on J2ME technology and provide application software for the most widely used mobile platform.
文摘采用电子束蒸发工艺在GaAs基LED外延层上制备了氧化铟锡(ITO:Indium Tin Oxide)薄膜,采用快速热退火(RTA:Rapid Thermo Annealing)工艺制备ITO薄膜与GaAs外延层的欧姆接触。研究了退火温度、退火时间对ITO薄膜性能以及LED芯片性能的影响。结果显示:固定退火时间8s时,ITO薄膜方块电阻呈减小趋势,但变化不大,430℃时为7.7Ω/□;LED芯片亮度LOP呈现非线性先上升后下降趋势,430℃时达峰值136mcd;外延片背面欧姆电阻呈现先下降后上升抛物线趋势,440℃时达谷值1.13Ω。固定退火温度415℃时,LED芯片亮度LOP呈现非线性先上升后下降趋势,退火12s时达峰值132.5mcd;外延片背面欧姆电阻呈现先下降后上升抛物线趋势,退火12s时时达谷值0.93Ω。
