提出一种应用于电能存储装置测试系统中的新型交错并联Boost软开关变换器。该变换器采用一组部分复用的辅助网络,令主开关管实现了零电压(zero-voltage-transition,ZVT)开通与关断,辅助开关管实现了零电流(zero-current-transition,ZCT...提出一种应用于电能存储装置测试系统中的新型交错并联Boost软开关变换器。该变换器采用一组部分复用的辅助网络,令主开关管实现了零电压(zero-voltage-transition,ZVT)开通与关断,辅助开关管实现了零电流(zero-current-transition,ZCT)开通与部分零电压关断,降低了开关损耗,提升了电路效率。开关过程中的dv/dt、di/dt得以降低,从噪声源上改善了变换器电磁兼容(electromagnetic compatibility,EMC)性能,对高频段噪声抑制效果明显。对拓扑结构、工作过程进行了分析,对宽范围工作的有效性与EMC性能的改善进行了论证,并搭建了1.5 k W原理样机进行试验研究,试验结果验证了理论分析的正确性。展开更多
The PIN diode model for high frequency dynamic transient characteristic simulation is important in conducted EMI analysis. The model should take junction temperature into consideration since equipment usually works at...The PIN diode model for high frequency dynamic transient characteristic simulation is important in conducted EMI analysis. The model should take junction temperature into consideration since equipment usually works at a wide range of temperature. In this paper, a temperature-variable high frequency dynamic model for the PIN diode is built, which is based on the Laplace-transform analytical model at constant temperature. The relationship between model parameters and temperature is expressed as temperature functions by analyzing the physical principle of these parameters. A fast recovery power diode MUR1560 is chosen as the test sample and its dynamic performance is tested under inductive load by a temperature chamber experiment, which is used for model parameter extraction and model verification. Results show that the model proposed in this paper is accurate for reverse recovery simulation with relatively small errors at the temperature range from 25 to 120 ℃.展开更多
文摘提出一种应用于电能存储装置测试系统中的新型交错并联Boost软开关变换器。该变换器采用一组部分复用的辅助网络,令主开关管实现了零电压(zero-voltage-transition,ZVT)开通与关断,辅助开关管实现了零电流(zero-current-transition,ZCT)开通与部分零电压关断,降低了开关损耗,提升了电路效率。开关过程中的dv/dt、di/dt得以降低,从噪声源上改善了变换器电磁兼容(electromagnetic compatibility,EMC)性能,对高频段噪声抑制效果明显。对拓扑结构、工作过程进行了分析,对宽范围工作的有效性与EMC性能的改善进行了论证,并搭建了1.5 k W原理样机进行试验研究,试验结果验证了理论分析的正确性。
基金Project supported by the National High Technology and Development Program of China(No.2011AA11A265)
文摘The PIN diode model for high frequency dynamic transient characteristic simulation is important in conducted EMI analysis. The model should take junction temperature into consideration since equipment usually works at a wide range of temperature. In this paper, a temperature-variable high frequency dynamic model for the PIN diode is built, which is based on the Laplace-transform analytical model at constant temperature. The relationship between model parameters and temperature is expressed as temperature functions by analyzing the physical principle of these parameters. A fast recovery power diode MUR1560 is chosen as the test sample and its dynamic performance is tested under inductive load by a temperature chamber experiment, which is used for model parameter extraction and model verification. Results show that the model proposed in this paper is accurate for reverse recovery simulation with relatively small errors at the temperature range from 25 to 120 ℃.
